2N5038 2N5039 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039 are silicon NPN power transistors designed for power amplifier and power oscillator applications where high current, high voltage, and fast switching speeds are required. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5038 150 150 110 90 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5038 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=140V, VBE=1.5V 50 ICEV VCE=110V, VBE=1.5V ICEV VCE=100V, VBE=1.5V, TC=150°C 10 ICEV VCE=85V, VBE=1.5V, TC=150°C ICEO VCE=70V 20 ICEO VCE=55V IEBO VEB=5.0V 5.0 IEBO VEB=7.0V 50 BVCEX IC=200mA, VBE=1.5V 150 BVCER IC=200mA, RBE≤50Ω 110 BVCEO IC=200mA 90 BVEBO IE=50mA 7.0 VCE(SAT) IC=12A, IB=1.2A 1.0 VCE(SAT) IC=10A, IB=1.0A VCE(SAT) IC=20A, IB=5.0A 2.5 VBE(SAT) IC=20A, IB=5.0A 3.3 VBE(ON) VCE=5.0V, IC=12A 1.8 VBE(ON) VCE=5.0V, IC=10A hFE VCE=5.0V, IC=2.0A 50 250 hFE VCE=5.0V, IC=10A hFE VCE=5.0V, IC=12A 20 100 2N5039 120 120 95 75 7.0 20 30 5.0 140 -65 to +200 1.25 2N5039 MIN MAX 50 10 20 15 50 120 95 75 7.0 1.0 2.5 3.3 1.8 30 250 20 100 - UNITS V V V V V A A A W °C °C/W UNITS mA mA mA mA mA mA mA mA V V V V V V V V V V R1 (17-March 2015) 2N5038 2N5039 SILICON NPN POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) 2N5038 2N5039 SYMBOL TEST CONDITIONS MIN MAX MIN MAX fT VCE=10V, IC=2.0A, f=5.0MHz 60 60 Cob VCB=10V, IE=0, f=1.0MHz 400 400 Is/b VCE=28V, t=1.0s 5.0 5.0 Is/b VCE=45V, t=1.0s 0.9 0.9 tr VCC=30V, IC=12A, IB1=IB2=1.2A 0.5 tr VCC=30V, IC=10A, IB1=IB2=1.0A 0.5 ts VCC=30V, IC=12A, IB1=IB2=1.2A 1.5 ts VCC=30V, IC=10A, IB1=IB2=1.0A 1.5 tf VCC=30V, IC=12A, IB1=IB2=1.2A 0.5 tf VCC=30V, IC=10A, IB1=IB2=1.0A 0.5 UNITS MHz pF A A μs μs μs μs μs μs TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (17-March 2015) w w w. c e n t r a l s e m i . c o m