http://www.fujisemi.com FMH06N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Equivalent circuit schematic TO-3P(Q) Drain(D) Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters GATE DRAIN SOURCE JEDEC:TO-3P Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 900 900 ±6 ±24 ±30 6 323.6 11.5 2.0 100 2.5 115 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V I D =3.0A, VGS=10V I D =3.0A, VDS=25V VDS=25V VGS=0V f=1MHz Vcc =600V VGS=10V I D =3.0A RG=39Ω Vcc =450V I D =6A VGS=10V See Fig.5 L=6.59mH, Tch=25°C I F=6A, VGS=0V, Tch=25°C I F=6A, VGS=0V -di/dt=100A/µs, Tch=25°C Tch=25°C Tch=125°C min. 900 3.5 3.5 6 - typ. 4.0 10 2.1 7.0 980 95 6.5 33 32 100 32 33 10 3.5 11 0.90 1.6 9.5 max. 4.5 25 250 100 2.5 1500 150 10 50 48 150 48 50 15 5.5 17 1.35 - Unit V V min. typ. max. 1.087 50.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Note *1 :Tch≤150°C. Note *2 :Stating Tch=25°C, IAS=2.4A, L=103mH, Vcc=90V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Symbol Rth (ch-c) Rth (ch-a) Note *3 :Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 :I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 :I F ≤-I D, dv/dt=2.0kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMH06N90E FUJI POWER MOSFET http://www.fujisemi.com Allowable Power Dissipation PD=f(Tc) 150 10 Safe Operating Area ID=f(VDS):Duty=0(Single pulse), Tc=25 °c 2 t= 1µs 125 10 1 10µs 100µs 75 ID [A] PD [W] 100 10 0 1ms 50 10 Power loss wavefo rm : Square wavefo rm -1 25 PD t 0 0 25 50 75 Tc [°C] 100 125 10 150 -2 10 10 0 1 10 VDS [V] 10 2 10 3 TypicalTransferCharacteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C 8 -1 20V 100 10V 7.0V 7 6 10 6.0V ID[A] ID [A] 5 4 1 3 VGS=5.5V 2 1 0.1 0 0 4 8 12 VDS [V] 16 20 0 24 Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C 4.0 100 1 2 3 4 5 VGS[V] 6 7 8 9 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25°C 6V VGS=5.5V 3.6 3.2 gfs [S] RDS(on) [ Ω ] 10 7V 10V 2.8 20V 2.4 1 2.0 1.6 0.1 0.1 1 10 0 100 ID [A] 1 2 3 4 ID [A] 2 5 6 7 8 FMH06N90E http://www.fujisemi.com Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.0A, VGS=10V 8 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA 8 7 7 6 6 5 5 VGS(th) [V] RDS(on) [Ω] FUJI POWER MOSFET 4 max. 3 typ. 4 min. 3 typ. 2 max. 2 1 1 0 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 Tch [°C] 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=6A, Tch=25°C Typical Capacitance C=f(VDS):VGS=0V, f=1MHz 14 10 4 10 3 10 2 12 Ciss Vcc= 120V 450V 720V 8 C [pF] VGS [V] 10 6 Coss 4 10 1 2 Crss 10 0 0 10 20 30 Qg [nC] 40 50 0 10 -2 10 -1 10 0 10 1 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V, VGS=10V, RG=39Ω 100 10 3 tf 10 td(off) 2 t [ns] IF [A] 10 1 td(on) tr 10 1 10 0 0.1 0.01 0.00 0.25 0.50 0.75 1.00 1.25 10 1.50 VSD [V] -1 10 0 10 ID [A] 3 1 10 2 FMH06N90E FUJI POWER MOSFET http://www.fujisemi.com Maximum Avalanche Energyvs. starting Tch E(AV)=f(startingTch):Vcc=90V, I(AV)<=6A 350 IAS=2.4A 300 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 250 10 1 10 0 150 Zth(ch-c) [˚C/W] EAV [mJ] IAS=3.6A 200 IAS=6.0A 100 50 0 0 25 50 75 100 125 10 -1 10 -2 10 -3 150 10 -6 10 -5 10 -4 10 -3 t [sec] starting Tch [°C] 4 10 -2 10 -1 10 0 FMH06N90E FUJI POWER MOSFET http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. A lthough Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. T he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. 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