http://www.fujisemi.com FMV10N80E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Equivalent circuit schematic TO-220F(SLS) Drain(D) Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 800 800 ±10 ±40 ±30 10 572.4 8.5 2.1 100 2.16 85 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C Electrical Characteristics at Tc=25°C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q SW Q GD IAV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Drain-Source Crossover Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS=0V I D =250µA, VDS=VGS VDS=800V, VGS=0V VDS=640V, VGS=0V VGS=±30V, VDS=0V I D =5.0A, VGS=10V I D =5.0A, VDS=25V Tch=25°C Tch=125°C VDS=25V VGS=0V f=1MHz Vcc =600V VGS=10V I D =5.0A RG=24Ω Vcc =450V I D =10A VGS=10V See Fig.5 L=4.20mH, Tch=25°C I F=10A, VGS=0V, Tch=25°C I F=10A, VGS=0V -di/dt=100A/µs, Tch=25°C min. 800 3.5 5.0 10 - typ. 4.0 10 0.9 10 1650 165 11 34 32 105 30 50 14 6 17 0.90 1.8 15 max. 4.5 25 250 100 1.1 2500 250 17 51 48 160 45 75 21 9 26 1.35 - Unit V V min. typ. max. 0.862 50.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 :Tch≤150°C. Note *2 :Stating Tch=25°C, IAS=4.0A, L=65.6mH, Vcc=80V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Test Conditions Channel to case Channel to ambient Note *3 :Repetitive rating : Pulse width limited by maximum channel temperature. Note *4 :I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 :I F ≤-I D, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMV10N80E 120 FUJI POWER MOSFET http://www.fujisemi.com Safe Operating Area ID=f(VDS):Duty=0(Singlepulse), Tc=25°c Allowable Power Dissipation PD=f(Tc) 10 2 t= 1µs 100 10 1 10µs 80 60 ID [A] PD [W] 100µs 10 0 1ms 40 10 Po we r loss wavefo rm : Sq uare wa veform -1 20 PD t 0 10 0 25 50 75 Tc [°C] 100 125 150 -2 10 -1 10 0 1 10 VDS [V] 10 2 10 3 Typical Transfer Characteristic ID=f(VGS):80µs pulse test, VDS=25V, Tch=25°C Typical Output Characteristics ID=f(VDS):80µs pulse test, Tch=25°C 20 100 20V 10V 7.0V 15 ID[A] ID [A] 10 10 1 6.0V 5 VGS=5.5V 0.1 0 0 4 8 12 VDS [V] 16 20 0 24 Typical Transconductance gfs=f(ID):80µs pulse test, VDS=25V, Tch=25°C 1 2 3 4 5 VGS [V] 6 7 8 9 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs pulse test, Tch=25°C 100 2.4 VGS=5.5V 6V 2.0 RDS(on) [Ω] gfs [S] 10 1 1.6 7V 10V 20V 1.2 0.8 0.1 0.1 1 10 0 100 ID [A] 2 2 4 6 8 10 ID [A] 12 14 16 18 FMV10N80E FUJI POWER MOSFET http://www.fujisemi.com Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS, ID=250µA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.0A, VGS=10V 3.5 8 7 3.0 6 VGS(th) [V] RDS(on) [Ω] 2.5 2.0 5 max. typ. 4 1.5 min. 3 max. 1.0 typ. 2 0.5 1 0.0 -50 -25 0 25 50 75 100 125 0 150 -50 Tch [°C] 0 25 50 75 100 125 Typical Capacitance C=f(VDS):VGS=0V, f=1MHz 14 10 4 10 3 10 2 Vcc= 160V 400V 640V 12 Ciss 10 C [pF] 8 6 Coss 4 10 1 Crss 2 0 10 0 10 20 30 40 Qg [nC] 50 60 70 0 10 80 -2 10 -1 10 0 10 1 10 2 VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V, VGS=10V, RG=24Ω Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test, Tch=25°C 100 10 3 tf 10 td(off) 10 2 td(on) t [ns] IF [A] 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25°C VGS [V] -25 1 tr 10 1 10 0 0.1 0.01 0.00 0.25 0.50 0.75 VSD [V] 1.00 1.25 10 1.50 -1 10 0 10 ID [A] 3 1 10 2 FMV10N80E FUJI POWER MOSFET http://www.fujisemi.com Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=80V, I(AV)<=10A 600 IAS=4.0A 500 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 1 10 0 IAS=6.0A 300 Zth(ch-c) [℃/W] EAV [mJ] 400 IAS=10A 200 100 0 0 25 50 75 100 125 10 -1 10 -2 10 -3 15 0 10 -6 10 -5 10 -4 10 -3 t [sec] startingTch [°C] 4 10 -2 10 -1 10 0 FMV10N80E FUJI POWER MOSFET http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. A ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. 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