FUJI FMV20N60S1

http://www.fujielectric.com/products/semiconductor/
FMV20N60S1
FUJI POWER MOSFET
Super J-MOS series
N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Outline Drawings [mm]
Equivalent circuit schematic
TO-220F(SLS)
Drain(D)
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Gate(G)
Source(S)
Connection
1 Gate
2 Drain
3 Source DIMENSIONS ARE IN MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC =25°C (unless otherwise specified)
Description
Pulsed Drain Current
Gate-Source Voltage
IDP
VGS
Characteristics
600
600
±20
±12.6
±60
±30
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
6.6
A
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
EAS
dVDS /dt
dV/dt
-di/dt
mJ
kV/μs
kV/μs
A/μs
Maximum Power Dissipation
PD
472.2
50
15
100
2.16
53
150
-55 to +150
2
Drain-Source Voltage
Continuous Drain Current
Operating and Storage Temperature range
Isolation Voltage
Symbol
VDS
VDSX
ID
Tch
Tstg
Viso
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch ≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch =25°C, IAS=2A, L=216mH, VDD =60V, RG =50Ω, See Fig.1 and Fig.2
E AS limited by maximum channel temperature and avalanche current.
Note *4 : I F ≤-I D, -di/dt=100A/μs, VDD ≤400V, Tch ≤150°C.
Note *5 : I F ≤-I D, dV/dt=15kV/μs, VDD ≤400V, Tch ≤150°C.
1
Unit
V
V
A
A
A
V
W
°C
°C
kVrms
Remarks
VGS=-30V
Tc=25°C
Tc=100°C
Note*1
Note*1
Note *2
Note *3
VDS ≤ 600V
Note *4
Note *5
Ta =25°C
Tc=25°C
t=60sec,f=60Hz
FMV20N60S1
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics at TC =25°C (unless otherwise specified)
Static Ratings
Description
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
IGSS
Drain-Source On-State Resistance
RDS(on)
Gate resistance
RG
Forward Transconductance
gfs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance,
energy related (Note *6)
Ciss
Coss
Crss
Effective output capacitance,
time related (Note *7)
Conditions
ID =250μA
VGS=0V
ID =250μA
VDS=VGS
max.
Unit
-
-
V
2.5
3
3.5
V
Tch =25°C
-
-
25
VDS=480V
VGS=0V
Tch =125°C
-
-
250
-
10
100
nA
-
0.161
0.19
Ω
-
3.7
-
Ω
S
μA
VGS= ± 30V
VDS=0V
ID =10A
VGS=10V
f=1MHz, open drain
ID =10A
VDS=25V
8.5
17.5
-
VDS=10V
VGS=0V
f=1MHz
-
1470
3120
280
-
Co(er)
VGS=0V
VDS=0…480V
-
90
-
Co(tr)
VGS=0V
VDS=0…480V
ID=constant
-
305
-
-
22
40
162
22
48
12.5
15
8
-
6.6
-
-
A
-
0.9
1.35
V
370
-
ns
-
6.2
-
μC
-
32
-
A
min.
typ.
max.
2.36
58
Unit
°C/W
°C/W
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source crossover Charge
Avalanche Capability
IAV
L=6.02mH,Tch =25°C
See Fig.1 and Fig.2
Diode Forward On-Voltage
VSD
IF=20A,VGS=0V
Tch =25°C
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irp
Turn-Off Time
typ.
600
VDS=600V
VGS=0V
td(on)
tr
td(off)
tf
QG
QGS
QGD
QSW
Turn-On Time
min.
VDD =400V, VGS=10V
ID =10A, RG =27Ω
See Fig.3 and Fig.4
VDD =480V, ID =20A
VGS=10V
See Fig.5
IF=20A, VGS=0V
VDD =400V
-di/dt=100A/μsTch =25°C
See Fig.6
pF
ns
nC
Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% BVDSS .
Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 80% BVDSS .
Thermal Characteristics
Description
Channel to Case
Channel to Ambient
Symbol
Rth(ch-c)
Rth(ch-a)
2
FMV20N60S1
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Allowable Power Dissipation
PD= f(TC)
60
Safe Operating Area
ID= f(VDS):Duty= 0(Single pulse), TC=25°C
2
10
t=
1µs
1
10µs
10
40
PD [W]
100µs
0
ID [A]
10
20
1ms
Power loss waveform :
Square waveform
-1
10
PD
t
0
-2
0
25
50
75
100
125
10
150
-1
0
10
1
10
Typical Output Characteristics
ID= f(VDS): 80µs pulse test, Tch=25°C
10V
50
45
40
20V
35
8V
6.5V
30
8V
10V
20V
6V
25
35
5.5V
6V
ID [A]
ID [A]
10
40
55
30
25
20
5V
15
5.5V
20
15
10
4.5V
5V
10
5
5
VGS=4V
VGS=4.5V
0
0
0
5
10
15
VDS [V]
20
25
0
Typical Drain-Source on-state Resistance
RDS(on)= f(ID): 80s pulse test, Tch=25°C
4.5V
5V
6V
5.5V
6.5V
5
10
VDS [V]
15
20
25
Typical Drain-Source on-state Resistance
RDS(on)= f(ID): 80s pulse test, Tch=150°C
8V
10V
4V
1.4
0.5
4.5V
5V
1.2
5.5V
1.0
0.4
VGS=20V
RDS(on) [ Ω ]
RDS(on) [ Ω ]
3
10
Typical Output Characteristics
ID= f(VDS): 80µs pulse test, Tch=150°C
60
0.6
2
10
VDS [V]
TC[°C]
0.3
6V
0.8
8V
10V
VGS=20V
0.6
0.2
0.4
0.1
0.2
0.0
0.0
0
5
10
15
20
25
30
35
40
45
50
55
60
0
ID [A]
5
10
15
20
ID [A]
3
25
30
35
40
FMV20N60S1
Drain-Source On-state Resistance
RDS(on)= f(Tch): ID=10A, VGS=10V
0.6
Gate Threshold Voltage vs. Tch
VGS(th)= f(Tch): VDS=VGS, ID=250µA
6
0.5
5
0.4
4
VGS(th) [V]
RDS(on) [ Ω ]
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
0.3
3
max.
typ.
2
0.2
typ.
1
0.1
0
0.0
-50
-25
0
25
50
Tch [°C]
75
100
125
-50
150
0
25
50
75
Tch [°C]
100
125
150
Typical Transconductance
gfs= f(ID): 80µs pulse test, VDS=25V
Typical Transfer Characteristic
ID= f(VGS): 80µs pulse test, VDS=25V
100
-25
100
10
Tch=25℃
10
1
Tch=25℃
150℃
gfs [S]
ID[A]
150℃
0.1
1
0.01
0.1
1E-3
0
1
2
3
4
5
VGS[V]
6
7
8
9
0.1
10
1
10
100
ID [A]
Typical Forward Characteristics of Reverse Diode
IF= f(VSD): 80µs pulse test
Typical Capacitance
C= f(VDS): VGS=0V, f=1MHz
5
10
100
4
10
Ciss
3
10
150℃
C [pF]
IF [A]
10
Tch=25℃
2
10
Coss
1
10
1
Crss
0
10
-1
0.1
0.0
0.5
1.0
1.5
10
2.0
-2
10
VSD [V]
-1
10
0
10
VDS [V]
4
1
10
2
10
FMV20N60S1
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Typical Coss stored energy
14
3
10
Typical Switching Characteristics vs. ID Tch=25°C
t= f(ID): Vdd=400V, VGS=10V/0V, RG=27Ω, L=500uH
12
10
tr
t [ns]
Eoss [uJ]
8
6
td(off)
2
10
4
tf
td(on)
2
0
1
0
100
200
300
400
500
10
600
0
1
10
10
ID [A]
Typical Gate Charge Characteristics
VGS= f(Qg): ID=20A, Vdd=480V, Tch=25°C
10
2
10
VDS [V]
Maximum Avalanche Energy vs. startingTch
E(AV)= f(starting Tch): VCC=60V, I(AV)<=6.6A
500
IAS=2A
450
8
400
350
300
EAV [mJ]
VGS [V]
6
4
IAS=4A
250
200
IAS=6.6A
150
2
100
50
0
0
10
20
30
40
50
0
60
0
Qg [nC]
Zth(ch-c) [°C/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
50
75
starting Tch [°C]
Transient Thermal Impedance
Zth(ch-c)= f(t): D=0
101
25
10-2
10-1
100
t [sec]
5
100
125
150
FMV20N60S1
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Outview: TO-220F(SLS) Package
Connection
1 Gate
2 Drain
3 Source
DIMENSIONS ARE IN MILLIMETERS.
Marking
Date code & Lot No.
Y: Last digit of year
M: Month code 1~9 and O,N,D
NNN: Lot. serial number
Under bar of date code
: means lead-free mark
Trademark
Country of
origin mark.
YMNNN
20N60S1
" " (Blank): Japan
P : Philippines
Type name
* The font (font type,size) and the trademark-size
might be actually different.
6
FMV20N60S1
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of February 2012.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
7