isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 8.0 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V 1.8 V ICEX Collector Cutoff Current VCE=70V;VEB(off)=-1.5V VCE=70V;VEB(off)=-1.5V;TC= 150℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.7 mA ICBO Collector Cutoff Current VCB= 70V; IE= 0 VCB= 70V; IE= 0; TC= 150℃ 1.0 10 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 4A ; VCE= 4V 20 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 5 Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f= 500kHz fT isc Website：www.iscsemi.cn CONDITIONS MIN MAX -60 B B 2 TYP. 2.0 UNIT V 100 MHz