isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY80 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation: PC= 36W @TC= 25℃ ·Complement to Type BDY82 APPLICATIONS ·Designed for general purpose switching and amplifier applications. VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VBE= -1.5V 40 VCEO Collector-Emitter Voltage 35 n c . i m e VEBO Emitter-Base Voltage 10 V ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT s c s i . w w w 40 V V V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 3.5 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY80 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 35 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.05A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 0.9 V ICEO Collector Cutoff Current VCE= 20V; IB= 0 10 mA ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.2 mA IEBO Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain fT CONDITIONS Current Gain-Bandwidth Product B C 40-80 70-140 120-240 isc Website：www.iscsemi.cn n c . i m e B s c s .i VEB= 5V; IC= 0 IC= 0.5A; VCE= 5V 40 IC= 1A; VCE= 5V 20 IC= 0.5A; VCE= 10V hFE-1 Classifications A TYP. B ww w MIN 2 MAX UNIT 240 1 MHz