isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VCEO(SUS) Collector-Emitter Voltage 50 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ VEBO B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 4.0 ℃/W 2SD916 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD916 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA; IB= 0 60 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 7.5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 7.5mA 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 50 mA hFE DC Current Gain IC= 3A; VCE= 1.5V isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. B B 2 800 4000 MAX UNIT