Preliminary Technical Information PolarPTM Power MOSFET IXTH16P60P IXTT16P60P VDSS ID25 = = ≤ RDS(on) TO-268 (IXTT) P-Channel Enhancement Mode Avalanche Rated G Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 16 A IDM TC = 25°C, pulse width limited by TJM - 48 A IAR TC = 25°C - 16 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 460 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 5 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-268 TO-247 (TO-247) TO-247 (IXTH) G z z z z z z VGS = 0V, ID = - 250μA - 600 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 V - 4.5 V ±100 nA TJ = 125°C D = Drain TAB = Drain International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy to drive and to protect Applications: z BVDSS D (TAB) S Features: z Characteristic Values Min. Typ. Max. D G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S D (TAB) Symbol © 2008 IXYS CORPORATION, All rights reserved - 600V - 16A Ω 720mΩ High side switching Push-pull amplifiers DC Choppers Current regulators Automatic test equipment Advantages: z z z z Low gate charge results in simple drive requirement High power density Fast switching Easy to parallel - 25 μA - 200 μA 720 mΩ DS99988(5/08) IXTH16P60P IXTT16P60P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 11 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 18 S 5120 pF 445 pF 60 pF 29 ns 25 ns 60 ns 38 ns 92 nC 27 nC 23 nC 0.27 °C/W RthJC RthCS 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 16 A ISM Repetitive, pulse width limited by TJM - 64 A VSD IF = - 8A, VGS = 0V, Note 1 - 2.8 V trr QRM IRM IF = - 8A, -di/dt = -150A/μs VR = - 100V, VGS = 0V 440 7.4 - 33.6 TO-247 (IXTH) Outline 1 2 ∅P 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 (IXTT) Outline ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH16P60P IXTT16P60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -16 -38 VGS = -10V - 7V -14 -30 -12 -26 ID - Amperes - 6V ID - Amperes VGS = -10V - 7V -34 -10 -8 -6 -22 - 6V -18 -14 -10 -4 -6 - 5V -2 - 5V -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 -11 -3 -6 -9 -12 -15 -18 -21 -24 -27 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = - 8A vs. Junction Temperature -16 -30 2.4 VGS = -10V - 7V -14 VGS = -10V 2.2 2.0 RDS(on) - Normalized ID - Amperes -12 - 6V -10 -8 -6 - 5V -4 1.8 I D = -16A 1.6 I D = - 8A 1.4 1.2 1.0 0.8 -2 0.6 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 8A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -18 2.2 VGS = -10V -16 TJ = 125ºC 2.0 -12 ID - Amperes RDS(on) - Normalized -14 1.8 1.6 1.4 -10 -8 -6 1.2 TJ = 25ºC -4 1.0 -2 0 0.8 0 -5 -10 -15 -20 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved -25 -30 -35 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTH16P60P IXTT16P60P Fig. 8. Transconductance Fig. 7. Input Admittance -20 32 TJ = - 40ºC -18 28 -16 24 25ºC g f s - Siemens ID - Amperes -14 TJ = 125ºC 25ºC - 40ºC -12 -10 -8 20 125ºC 16 12 -6 8 -4 4 -2 0 -3.5 0 -4.0 -4.5 -5.0 -5.5 -6.0 0 -2 -4 -6 VGS - Volts -8 -10 -12 -14 -16 -18 -20 80 90 100 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -50 -10 -45 -9 VDS = - 300V -40 -8 -35 -7 VGS - Volts IS - Amperes I D = - 8A -30 -25 TJ = 125ºC -20 -15 -6 -5 -4 -3 TJ = 25ºC -10 -2 -5 -1 0 -0.5 I G = -1mA 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 10 20 VSD - Volts 40 50 60 70 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance -100.0 10,000 RDS(on) Limit Ciss 100µs - 10.0 1,000 1ms ID - Amperes Capacitance - PicoFarads 30 Coss 100 DC 100ms - 1.0 10ms TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. - 10 - 100 VDS - Volts - 1000 IXTH16P60P IXTT16P60P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_16P60P (B7) 6-03-08