IXFR14N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = 1000V = 9.5A ≤ 1.1Ω Ω ≤ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 9.5 A IDM TC = 25°C, Pulse Width Limited by TJM 56 A IA EAS TC = 25°C TC = 25°C 14 2.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting Force 20..120/4.5..27 N/lb. 5 g Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 7A, Note 1 Characteristic Values Min. Typ. Max. 1000 3.0 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved Isolated Tab G = Gate S = Source D = Drain Features • Double Metal Process for Low Gate Resistance • International Standard Package • Epoxy Meet UL 94 V-0, Flammability Classification • Low Rds(on), Low Qg • Avalanche Energy and Current Rated • Fast Intrinsic Recfifier Applications • DC-DC Converters • Switched-Mode and Resonant-Mode Power Supplies, >500kHz Switching • DC Choppers • Pulse Generation • Laser Drivers V Advantages 5.5 V ± 200 nA • Easy to Mount • Space Savings • High Power Density 25 μA 1 mA 1.1 Ω DS99229B(04/09) IXFR14N100Q2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = 10V, ID = 7A, Note 1 Ciss Coss ISOPLUS247 (IXFR) Outline 14 S 2800 pF 287 pF Crss VGS = 0V, VDS = 25V, f = 1MHz 100 pF td(on) 12 ns tr Resistive Switching Times 10 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 7A 28 ns tf RG = 2Ω (External) 12 ns 83 nC 20 nC 40 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 7A Qgd 0.62 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C Unless Otherwise Specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 14 A ISM Repetitive, Pulse Width Limited by TJM 56 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 14A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.8 μC 7 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR14N100Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 27 14 VGS = 10V 12 7V 8V 21 I D - Amperes 10 I D - Amperes V GS = 10V 24 8 6 6V 18 7V 15 12 9 6V 4 6 2 3 5V 5V 0 0 0 2 4 6 8 10 12 0 14 3 6 9 12 15 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC 24 27 30 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 14 3.2 VGS = 10V 7V VGS = 10V 2.8 R D S (on) - Normalized 12 I D - Amperes 21 10 6V 8 6 4 2 2.4 2.0 I D = 14A I D = 7A 1.6 1.2 0.8 5V 0 0 4 8 12 16 20 24 0.4 -50 28 -25 0 V DS - Volts Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D 50 75 100 125 150 Fig. 6. Drain Current vs. Case Temperature 2.6 11 VGS = 10V 2.4 10 T J = 125ºC 9 2.2 8 2.0 I D - Amperes R D S (on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 7 6 5 4 3 1.2 T J = 25ºC 2 1.0 1 0.8 0 3 6 9 12 I D 15 18 - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 21 24 27 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFR14N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 20 28 T J = - 40ºC 18 24 14 T J = 125ºC 12 25ºC 10 20 g f s - Siemens I D - Amperes 16 - 40ºC 8 6 25ºC 16 125ºC 12 8 4 4 2 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 4 8 V GS - Volts I 20 24 28 Fig. 10. Gate Charge 45 10 40 9 35 8 VDS = 500V I D = 7A I G = 10mA 7 30 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 12 16 - Amperes D 25 20 T J = 125ºC 15 6 5 4 3 T J = 25ºC 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 V SD - Volts 10 20 30 Q G 40 50 60 70 80 90 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10000 Z (th) J C - (ºC/W) Capacitance - pF Ciss 1000 Coss 100 0.1 Crss f = 1MHz 10 0.01 0 5 10 15 20 25 30 35 40 V DS - Volts 1 10 100 1000 Pulse Width - milliseconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_14N100Q2 (7F) 05-28-08-B