PolarTM Power MOSFET HiPerFETTM IXFV22N50P IXFV22N50PS IXFH22N50P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 22 A IDM TC = 25°C, Pulse Width Limited by TJM 50 A IA EAS TC = 25°C TC = 25°C 22 750 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 350 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 11..65/2.5..14.6 N/lb. 6 4 g g G D S Maximum Ratings TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247) FC Mounting Force (PLUS 220) Weight TO-247 PLUS 220 types D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved z z z V High Power Density Easy to Mount Space Savings Applications 5.5 V ± 100 nA z 15 250 μA μA z 270 mΩ z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99358G(07/09) IXFV22N50PS IXFV22N50P IXFH22N50P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 12 Ciss 20 S 2880 pF 310 pF 29 pF VGS = 0V, VDS = 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 10Ω (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs PLUS220 (IXFV) Outline Qgd 22 ns 25 ns 72 ns 21 ns 50 nC 16 nC 18 nC 0.35 °C/W RthJC RthCS (TO-247 & PLUS220) °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 22 A ISM Repetitive, Pulse Width Limited by TJM 88 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 22A, -di/dt = 100A/μs 200 ns QRM VR = 100V, VGS = 0V IRM 0.7 μC 7.0 A E E1 A A1 L2 E1 D1 D L3 L1 L 3X b 2X e c A2 Terminals: 1 - Gate 3 - Source 2 - Drain TAB - Drain A A1 A2 b c D D1 E E1 e L L1 L2 L3 TO-247 (IXFH) Outline ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PLUS220SMD (IXFV_S) Outline E E1 A A1 L2 D A3 L3 L4 L L1 2X b e c A2 Terminals: 1 - Gate 3 - Source e E1 2 - Drain TAB - Drain A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFV22N50PS IXFV22N50P IXFH22N50P Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 55 22 VGS = 10V 8V 7V 20 18 45 40 ID - Amperes 16 ID - Amperes VGS = 10V 8V 50 14 12 6V 10 30 25 6V 8 20 6 15 4 7V 35 10 5V 2 5V 5 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 25 30 Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature 22 3.2 VGS = 10V 7V 20 VGS = 10V 2.8 16 R DS(on) - Normalized 18 ID - Amperes 20 VDS - Volts 6V 14 12 10 8 6 2.4 I D = 22A 2.0 I D = 11A 1.6 1.2 5V 4 0.8 2 0 0.4 0 2 4 6 8 10 12 -50 14 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 24 3.4 VGS = 10V 3.0 20 2.6 16 ID - Amperes R DS(on) - Normalized TJ = 125ºC 2.2 1.8 12 8 1.4 TJ = 25ºC 4 1.0 0.6 0 0 5 10 15 20 25 30 35 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFV22N50PS IXFV22N50P IXFH22N50P Fig. 7. Input Admittance Fig. 8. Transconductance 40 40 35 35 30 30 TJ = - 40ºC g f s - Siemens ID - Amperes 25ºC TJ = 125ºC 25ºC - 40ºC 25 20 15 25 15 10 10 5 5 0 125ºC 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 4 8 12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 24 28 32 36 Fig. 10. Gate Charge 10 80 VDS = 250V 9 70 I D = 11A 8 60 I G = 10mA 7 50 VGS - Volts IS - Amperes 16 ID - Amperes 40 TJ = 125ºC 30 6 5 4 3 20 TJ = 25ºC 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100.0 f = 1 MHz RDS(on) Limit 100µs 1,000 10.0 ID - Amperes Capacitance - PicoFarads 25µs Ciss Coss 100 1.0 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss DC 10 10ms 100ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFV22N50PS IXFV22N50P IXFH22N50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_22N50P(63)07-22-09-B