GenX3TM A3-Class IGBTS IXGK120N60A3 IXGX120N60A3 VCES = 600V IC110 = 120A VCE(sat) ≤ 1.35V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C TC = 110°C Terminal Current Limit TC = 25°C, 1ms 200 120 75 600 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1.5Ω Clamped Inductive Load ICM = 200 @ < 600 A V PC TC = 25°C 780 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G C (TAB) E E PLUS 247TM (IXGX) G C (TAB) E G = Gate C = Collector E = Emitter TAB = Collector Features z z z z Optimized for Low Conduction Losses Square RBSOA High Current Handling Capability International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. = 500μA, VCE = VGE 3.0 5.0 VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 z ±400 nA 1.20 1.35 V Applications z z z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement V 50 μA 1.25 mA TJ = 125°C IGES z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS99964A(02/09) IXGK120N60A3 IXGX120N60A3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC Characteristic Values Min. Typ. Max. = 60A, VCE = 10 V, Note 1 65 Cies Coes TO-264 (IXGK) Outline 108 S 14.8 nF 800 pF 140 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres 450 nC 67 nC Qgc 130 nC td(on) 39 ns Qg(on) Qge tri IC = IC110, VGE = 15 V, VCE = 0.5 • VCES Inductive load, TJ = 25°C 82 ns IC = 100A, VGE = 15V 2.7 mJ 295 ns 260 ns 6.6 mJ td(on) 40 ns tri 83 ns 3.5 mJ 420 ns Eon td(off) tfi VCE = 480V, RG = 1.5Ω Eoff Eon td(off) tfi Inductive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 480V, RG = 1.5Ω Eoff 410 ns 10.4 mJ 0.16 °C/W RthJC RthCK 0.15 °C/W PLUS 247TM (IXGX) Outline Note: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. A A1 A2 b b1 b2 C D E e L L1 Q Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK120N60A3 IXGX120N60A3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGE = 15V 13V 11V 180 160 9V 250 140 7V 120 IC - Amperes IC - Amperes VGE = 15V 11V 9V 300 100 80 60 200 7V 150 100 40 50 20 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 5 6 7 8 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 200 1.4 VGE = 15V 13V 11V 9V 160 VGE = 15V 1.3 VCE(sat) - Normalized 180 140 IC - Amperes 4 VCE - Volts VCE - Volts 120 100 7V 80 60 1.2 I C = 200A I C = 100A I C = 50A 1.1 1.0 0.9 40 0.8 5V 20 0 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.0 2.8 180 TJ = 25ºC 2.6 160 2.4 I 2.2 2.0 C TJ = - 40ºC 25ºC 125ºC 140 = 200A 100A 50A IC - Amperes VCE - Volts 0 1.8 1.6 120 100 80 60 1.4 40 1.2 20 1.0 0.8 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXGK120N60A3 IXGX120N60A3 Fig. 8. Gate Charge Fig. 7. Transconductance 200 16 TJ = - 40ºC 180 VCE = 300V 14 I C = 120A I G = 10mA 12 140 25ºC 120 VGE - Volts g f s - Siemens 160 125ºC 100 80 10 8 6 60 4 40 2 20 0 0 0 20 40 60 80 100 120 140 160 180 200 0 220 50 100 150 Fig. 9. Capacitance 250 300 350 400 450 500 Fig. 10. Reverse-Bias Safe Operating Area 220 100,000 200 f = 1 MHz 180 Cies 160 10,000 IC - Amperes Capacitance - PicoFarads 200 QG - NanoCoulombs IC - Amperes Coes 1,000 Cres 5 10 15 20 25 120 100 80 60 TJ = 125ºC 40 RG = 1.5Ω dV / dt < 10V / ns 20 0 100 100 0 140 30 35 40 150 200 250 300 VCE - Volts 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N60A3(86)02-11-09-B IXGK120N60A3 IXGX120N60A3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 12 5.0 11 4.5 C 4.0 --- 7 2.5 2.0 I C = 50A 5 6 7 8 9 3.0 TJ = 125ºC 6 2.5 5 1.0 1.0 2 0.5 0.5 1 50 10 55 60 65 70 RG - Ohms 12 Eoff RG = 1.5Ω , VGE = 15V 6 2.5 5 2.0 4 1.5 1.0 I C = 50A 35 45 55 65 75 85 tf td(off) - - - - VCE = 480V 425 800 400 700 I 375 I C 95 105 115 600 = 50A 500 325 400 300 1 2 3 4 475 450 425 400 400 td(off) - - - - 375 350 VCE = 480V 325 300 300 275 TJ = 25ºC 250 225 60 65 70 75 80 8 9 10 85 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 95 275 250 225 100 475 425 tf td(off) - - - - 400 VCE = 480V 450 RG = 1.5Ω , VGE = 15V 375 I C 425 400 = 100A, 50A 350 375 325 350 300 325 275 300 250 275 225 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 250 125 t d(off) - Nanoseconds 425 t f - Nanoseconds TJ = 125ºC 55 7 450 t d(off) - Nanoseconds t f - Nanoseconds 450 50 6 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 500 325 5 RG - Ohms 475 RG = 1.5Ω , VGE = 15V = 100A 300 0.0 125 500 tf C 350 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 350 900 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 375 0.0 100 0.5 1 25 t f - Nanoseconds 3.0 Eon - MilliJoules 3.5 I C = 100A 7 2 95 t d(off) - Nanoseconds 4.0 3 90 1000 450 4.5 8 85 475 5.0 ---- VCE = 480V 9 Eoff - MilliJoules Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 5.5 10 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 11 2.0 TJ = 25ºC 1.5 4 4 3.5 7 3 1.5 3 8 4 5 3 5.0 ---- - MilliJoules VCE = 480V - MilliJoules 3.0 Eon on 3.5 TJ = 125ºC , VGE = 15V 2 4.5 VCE = 480V 9 on Eon - Eoff 8 1 RG = 1.5Ω , VGE = 15V E 9 6 Eoff 10 4.0 = 100A 5.5 11 Eoff - MilliJoules I E Eoff - MilliJoules 10 12 IXGK120N60A3 IXGX120N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 td(on) - - - - 80 TJ = 125ºC, VGE = 15V I 70 100 60 80 50 I 60 C = 50A 40 40 30 20 2 3 4 5 6 7 8 9 tr 100 RG = 1.5Ω , VGE = 15V 41 VCE = 480V 40 90 42 td(on) - - - - 80 39 TJ = 25ºC, 125ºC 70 38 60 37 50 36 40 35 30 34 20 33 10 32 0 20 1 43 110 50 10 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 120 = 100A C t d(on) - Nanoseconds VCE = 480V t r - Nanoseconds tr 140 t r - Nanoseconds 120 90 31 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 110 48 tr 100 90 46 44 VCE = 480V 80 42 I C = 100A 70 40 60 38 50 36 40 34 30 I C 32 = 50A 20 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - RG = 1.5Ω , VGE = 15V 115 30 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N60A3(86)02-11-09-B