IXYS IXXH100N60B3

Advance Technical Information
XPTTM 600V
GenX3TM
IXXH100N60B3
VCES
IC110
VCE(sat)
tfi(typ)
Extreme Light Punch Through
IGBT for 10-30 kHz Switching
=
=
≤
=
600V
100A
1.80V
150ns
TO-247 AD
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Maximum Ratings
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
ICM
TC= 25°C ( Chip Capability )
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
210
160
100
400
A
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
50
600
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
ICM = 200
@ ≤ VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10Ω, Non Repetitive
10
μs
PC
TC = 25°C
Md
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
g
Weight
Tab
E
C
= Collector
Tab = Collector
Features
z
830
C
G = Gate
E = Emitter
z
z
TJ
TJM
Tstg
TL
TSOLD
G
z
z
z
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
International Standard Package
Advantages
z
z
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE= 0V
600
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE= 0V
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 70A, VGE = 15V, Note 1
TJ = 150°C
© 2010 IXYS CORPORATION, All Rights Reserved
z
z
V
5.5
V
25 μA
2 mA
TJ = 150°C
IGES
z
1.50
1.77
±100
nA
1.80
V
V
z
z
z
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100284(12/10)
IXXH100N60B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Characteristic Values
Min.
Typ.
Max.
IC = 60A, VCE = 10V, Note 1
22
VCE = 25V, VGE = 0V, f = 1MHz
Notes:
40
S
4860
285
83
pF
pF
pF
143
nC
37
nC
60
nC
30
70
1.9
120
150
2.0
ns
ns
mJ
ns
ns
mJ
IC = 70A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
2.8
32
60
2.3
150
200
2.8
ns
ns
mJ
ns
ns
mJ
0.21
0.18 °C/W
°C/W
Inductive load, TJ = 150°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
RthJC
RthCS
TO-247 (IXXH) Outline
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitted
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXXH100N60B3
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
350
140
VGE = 15V
VGE = 15V
13V
12V
120
11V
100
13V
250
80
10V
60
9V
40
IC - Amperes
IC - Amperes
14V
300
12V
200
11V
150
10V
100
8V
9V
20
50
7V
6V
0
0
0.4
0.8
1.2
1.6
2
2.4
8V
7V
0
2.8
0
2
4
6
8
14
16
18
20
150
175
1.8
VGE = 15V
13V
12V
120
VGE = 15V
11V
100
10V
80
60
9V
40
8V
7V
5V
0
0.5
1
1.5
2
2.5
3
C
= 140A
1.4
1.2
I
C
= 70A
1.0
0.8
20
0
I
1.6
VCE(sat) - Normalized
140
IC - Amperes
12
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
I
C
= 35A
0.6
-50
3.5
-25
0
25
VCE - Volts
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
5.0
180
TJ = 25ºC
4.5
160
140
4.0
3.5
I
3.0
C
IC - Amperes
VCE - Volts
10
VCE - Volts
VCE - Volts
= 140A
2.5
TJ = 150ºC
25ºC
- 40ºC
100
80
60
70A
2.0
120
40
1.5
20
35A
1.0
0
8
9
10
11
12
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
8
VGE - Volts
9
10
11
IXXH100N60B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
80
16
TJ = - 40ºC
70
25ºC
60
g f s - Siemens
VCE = 300V
14
150ºC
VGE - Volts
50
I C = 70A
I G = 10mA
12
40
30
10
8
6
20
4
10
2
0
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
220
10,000
180
Cies
160
1,000
IC - Amperes
Capacitance - PicoFarads
200
Coes
100
140
120
100
80
60
Cres
40
f = 1 MHz
20
5
10
15
20
25
30
35
RG = 2Ω
dv / dt < 10V / ns
0
100
10
0
TJ = 150ºC
40
150
200
VCE - Volts
250
300
350
400
450
500
550
600
650
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
1000
1
VCE(sat) Limit
25µs
External Lead Limit
100µs
10
1ms
1
TJ = 175ºC
0.1
0.01
10ms
TC = 25ºC
Single Pulse
DC
0.1
1
Z(th)JC - ºC / W
ID - Amperes
100
10
100
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Second
0.1
1
IXXH100N60B3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
4.5
5
7
Eon -
Eoff
4.0
Eoff
--6
TJ = 150ºC , VGE = 15V
4
2.5
3
I
2.0
Eoff - MilliJoules
Eoff - MilliJoules
I C = 100A
= 50A
C
3
4
5
6
7
8
9
10
11
12
13
14
TJ = 150ºC
3
2
2
TJ = 25ºC
1
20
15
30
40
50
RG - Ohms
2
2
I C = 50A
1
1
0
75
100
I
260
220
180
I
100
3
4
5
6
7
11
12
13
14
15
160
150
120
TJ = 25ºC
100
80
50
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
90
40
100
td(on) - - - -
220
200
VCE = 360V
I C = 100A
220
180
200
160
180
140
I C = 50A
160
120
140
100
120
80
100
25
50
75
100
TJ - Degrees Centigrade
125
60
150
t d(off) - Nanoseconds
200
80
tfi
RG = 2Ω , VGE = 15V
240
200
70
10
240
260
280
240
TJ = 150ºC
60
9
280
t d(off) - Nanoseconds
t f i - Nanoseconds
td(off) - - - -
VCE = 360V
50
8
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
t f i - Nanoseconds
tfi
RG = 2Ω , VGE = 15V
40
180
= 100A
140
2
320
30
C
RG - Ohms
400
20
260
100
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
250
= 50A
220
TJ - Degrees Centigrade
300
C
140
0
150
125
300
VCE = 360V
t f i - Nanoseconds
3
td(off) - - - -
t d(off) - Nanoseconds
I C = 100A
3
350
0
100
TJ = 150ºC, VGE = 15V
300
4
Eon - MilliJoules
Eoff - MilliJoules
----
VCE = 360V
50
90
340
tfi
RG = 2Ω , VGE = 15V
25
80
340
5
Eon
70
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
5
Eoff
60
IC - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
4
3
0
1
2
4
VCE = 360V
1
2
1.5
----
Eon - MilliJoules
5
Eon - MilliJoules
3.5
Eon
RG = 2Ω , VGE = 15V
4
VCE = 360V
3.0
5
IXXH100N60B3
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
180
td(on) - - - -
76
TJ = 150ºC, VGE = 15V
VCE = 360V
140
60
100
52
80
I
C
44
= 50A
60
36
40
28
20
3
4
5
6
7
8
9
10
11
12
13
14
100
34
80
32
TJ = 150ºC, 25ºC
60
30
40
28
20
26
0
20
2
36
RG = 2Ω , VGE = 15V
20
15
RG - Ohms
30
40
50
60
70
80
90
t d(on) - Nanoseconds
C = 100A
t d(on) - Nanoseconds
I
td(on) - - - -
VCE = 360V
68
120
38
tri
120
t r i - Nanoseconds
160
t r i - Nanoseconds
140
84
tri
24
100
IC - Amperes
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
180
37
tri
160
td(on) - - - -
36
RG = 2Ω , VGE = 15V
35
VCE = 360V
120
34
100
I
C
33
= 100A
80
32
60
31
I C = 50A
40
t d(on) - Nanoseconds
t r i - Nanoseconds
140
30
20
29
0
25
50
75
100
125
28
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_100N60B3(7D)9-30-10-A