Preliminary Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS(on) = 4500V = 0.9A Ω ≤ 95Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 0.9 A IDM TC = 25°C, Pulse Width Limited by TJM 3.0 A PD TC = 25°C 165 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 20..120 / 4.5..27 N/lb. 4500 V~ 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight 1 5 1 = Gate 2 = Source z z z z z z VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV 10 μA 50 μA μA RDS(on) 3.5 Note 2, TJ = 100°C VGS = 10V, ID = 50mA, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved 6.0 25 95 V 5 = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4500V~ Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Characteristic Values Min. Typ. Max. Isolated Tab Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) 2 High Voltage Package Easy to Mount Space Savings High Power Density Applications z z z z High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems Ω DS100501B(04/13) IXTF1N450 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 50V, ID = 200mA, Note 1 0.28 Ciss Coss ISOPLUS i4-PakTM (HV) Outline 0.46 S 1730 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 78 pF 28 pF RGi Gate Input Resistance 21 Ω td(on) Resistive Switching Times 34 ns 60 ns 58 ns 127 ns 40 nC 10 nC 20 nC 0.15 0.77 °C/W °C/W tr td(off) tf VGS = 10V, VDS = 500V, ID = 0.5A RG = 10Ω (External) Qg(on) Qgs VGS = 10V, VDS = 1kV, ID = 0.5A Qgd RthJC RthCS Pin Pin Pin Pin 1 2 3 4 = = = = Gate Soure Drain Isolated Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 1 A ISM Repetitive, Pulse Width Limited by TJM 5 A VSD IF = 1A, VGS = 0V, Note 1 2.0 V trr IF = 1A, -di/dt = 50A/μs, VR = 100V Notes: 1.75 μs 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp IDSS measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTF1N450 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 1.0 VGS = 10V 9V 0.9 1.2 0.8 VGS = 10V 8V 1.0 8V 0.6 ID - Amperes ID - Amperes 0.7 7V 0.5 0.4 0.8 0.6 7V 0.4 0.3 0.2 0.2 6.5V 0.1 6V 6V 0.0 0.0 0 10 20 30 40 50 60 70 0 80 50 100 150 250 300 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.6 1.0 VGS = 10V 7V 0.9 VGS = 10V 2.2 R DS(on) - Normalized 0.8 0.7 ID - Amperes 200 VDS - Volts VDS - Volts 0.6 0.5 0.4 6V 0.3 0.2 I D = 1A 1.8 I D = 0.5A 1.4 1.0 0.6 0.1 5V 0.0 0.2 0 20 40 60 80 100 120 140 -50 160 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 1.0 2.2 VGS = 10V 2.0 0.8 ID - Amperes R DS(on) - Normalized TJ = 125ºC 1.8 1.6 1.4 1.2 0.6 0.4 TJ = 25ºC 0.2 1.0 0.8 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 0.9 1 1.1 1.2 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTF1N450 Fig. 7. Input Admittance Fig. 8. Transconductance 1.2 0.7 TJ = - 40ºC 0.6 1.0 g f s - Siemens ID - Amperes 0.5 0.4 TJ = 125ºC 0.3 25ºC - 40ºC 25ºC 0.8 125ºC 0.6 0.4 0.2 0.2 0.1 0.0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.0 7.5 0.1 0.2 0.3 VGS - Volts 0.4 0.5 0.6 0.7 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 3.0 VDS = 1000V 9 2.5 I D = 500mA 8 I G = 1mA VGS - Volts IS - Amperes 7 2.0 TJ = 125ºC 1.5 1.0 TJ = 25ºC 6 5 4 3 2 0.5 1 0 0.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 5 10 VSD - Volts 15 20 25 30 35 40 45 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10.00 10,000 f = 1 MHz 25µs Ciss 1,000 Coss 100 100µs 1.00 ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1ms 0.10 10ms TJ = 150ºC TC = 25ºC Single Pulse Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 100 1,000 VDS - Volts 10,000 IXTF1N450 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N450(H7)10-09-12