Preliminary Technical Information PolarPTM Power MOSFET IXTR48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 30 A IDM TC = 25°C, pulse width limited by TJM -144 A IAR TC = 25°C - 48 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 20..120 / 4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting force t = 1min t = 1s Weight Isolated Tab G = Gate S = Source D = Drain Features z z z z z z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated The rugged PolarPTM process Low QG Low Drain-to-Tab capacitance Low package inductance - easy to drive and to protect Applications z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. z BVDSS VGS = 0V, ID = - 250μA - 200 z VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = - 24A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V - 4.5 V z z High side switching Push-pull amplifiers DC Choppers Automatic test equipment Load-Switch Application Fuel Injection Systems ±100 nA TJ = 125°C - 25 μA - 200 μA 93 mΩ DS99982(5/08) IXTR48P20P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 24A, Note 1 19 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf S 5400 pF 1040 pF 170 pF 30 ns 46 ns 67 ns 27 ns 103 nC Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = - 24A RG = 3Ω (External) Qg(on) Qgs 32 VGS = -10V, VDS = 0.5 • VDSS, ID = - 24A Qgd 23 nC 40 nC ISOPLUS247 (IXTR) Outline 0.66 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 48 A ISM Repetitive, pulse width limited by TJM -192 A VSD IF = - 24A, VGS = 0V, Note 1 - 3.3 V trr QRM IRM IF = - 24A, -di/dt = -150A/μs 260 4.2 - 32.2 VR = -100V, VGS = 0V ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR48P20P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -50 -160 VGS = -10V - 9V - 8V -45 -40 VGS = -10V - 9V -140 -120 - 7V ID - Amperes ID - Amperes -35 -30 -25 -20 - 6V - 8V -100 -80 -60 - 7V -40 - 6V -15 -10 - 5V -5 -20 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -3 -6 -9 -15 -18 -21 -24 -27 VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to ID = - 24A vs. Junction Temperature -30 2.4 VGS = -10V - 9V - 8V -45 VGS = -10V 2.2 -40 -35 RDS(on) - Normalized 2.0 - 7V -30 -25 - 6V -20 -15 -10 1.8 I D = - 48A 1.6 I D = - 24A 1.4 1.2 1.0 0.8 -5 0.6 - 5V 0 0.4 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 24A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -33 2.8 2.6 -30 VGS = -10V TJ = 125ºC -27 2.4 -24 2.2 ID - Amperes RDS(on) - Normalized -12 VDS - Volts -50 ID - Amperes - 5V 2.0 1.8 1.6 1.4 -21 -18 -15 -12 -9 TJ = 25ºC 1.2 -6 1.0 -3 0.8 0 0 -20 -40 -60 -80 -100 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved -120 -140 -160 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTR48P20P Fig. 8. Transconductance Fig. 7. Input Admittance -90 60 TJ = - 40ºC 25ºC 125ºC -80 -70 50 45 g f s - Siemens -60 ID - Amperes TJ = - 40ºC 55 -50 -40 -30 25ºC 40 35 125ºC 30 25 20 15 -20 10 -10 5 0 -3.5 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 0 -10 -20 -30 VGS - Volts -40 -50 -60 -70 -80 -90 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -10 -160 VDS = -100V -9 -140 I D = - 24A -8 I G = -1mA -120 -100 VGS - Volts IS - Amperes -7 -80 -60 TJ = 125ºC -6 -5 -4 -3 -40 TJ = 25ºC -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 10 20 VSD - Volts 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 - 1,000 Ciss - 100 RDS(on) Limit ID - Amperes Capacitance - PicoFarads TJ = 150ºC TC = 25ºC Single Pulse 1,000 Coss 100µs 1ms - 10 10ms Crss f = 1 MHz DC 100ms -1 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. -1 - 10 - 100 VDS - Volts - 1000 IXTR48P20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_48P20P(B7) 5-13-08