IXTA02N250 IXTH02N250 IXTV02N250S High Voltage Power MOSFETs VDSS ID25 RDS(on) = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 2500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 200 mA IDM TC = 25°C, Pulse Width Limited by TJM 600 mA PD TC = 25°C 83 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in 11..65 / 25..14.6 N/lb. 2.5 4.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-247) FC Mounting Force (PLUS220 & TO-263) Weight TO-263 PLUS220 TO-247 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 2500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.8 • VDSS RDS(on) VGS = 10V, ID = 50mA, Note 1 G D D (Tab) S PLUS220SMD (IXTV_S) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain z Fast Intrinsic Diode Low Package Inductance V 5 μA 500 μA 450 TO-247 (IXTH) z ±100 nA TJ = 125°C D (Tab) Features V 4.5 S Advantages z z Easy to Mount Space Savings Ω Applications z z z © 2012 IXYS CORPORATION, All Rights Reserved High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100187C(04/12) IXTA02N250 IXTH02N250 IXTV02N250S Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) Characteristic Values Min. Typ. Max. 88 Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 100Ω (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 145 mS 116 8 3 pF pF pF 19 ns 19 ns 32 ns 33 ns e 7.4 nC Terminals: 1 - Gate 3 - Source 0.7 nC Dim. 5.3 nC 1 TO-247 & PLUS220 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 mA ISM Repetitive, Pulse Width Limited by TJM 800 mA VSD IF = 100mA, VGS = 0V, Note 1 2.0 trr IF = 200mA, -di/dt = 50A/μs, VR = 100V Note 1.5 V 2 ∅P 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1.5 °C/W RthJC RthCS TO-247 Outline 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD Outline E E1 μs A A1 L2 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. E1 D A3 L3 *Additional provisions for lead to lead voltage isolation are required at VDS > 1200V. L4 L L1 2X b e c A2 1. Gate 2. Drain 3. Source 4. Drain TO-263 Outline PIN: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA02N250 IXTH02N250 IXTV02N250S Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 VGS = 10V 8V 400 VGS = 10V 7V 350 6V 300 ID - MilliAmperes ID - MilliAmperes 150 100 5V 50 7V 250 200 6V 150 100 5V 50 4V 4V 0 0 0 10 20 30 40 50 60 70 80 90 0 100 50 100 150 250 300 350 400 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 200 3.0 VGS = 10V 7V 150 VGS = 10V 2.6 6V 100 R DS(on) - Normalized ID - MilliAmperes 200 5V 50 4V 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 0.6 0.2 0 0 20 40 60 80 100 120 140 160 180 -50 200 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 3.4 200 VGS = 10V 2.6 160 TJ = 125ºC ID - MilliAmperes R DS(on) - Normalized 3.0 2.2 1.8 TJ = 25ºC 120 80 1.4 40 1.0 0 0.6 0 50 100 150 200 250 ID - MilliAmperes © 2012 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA02N250 IXTH02N250 IXTV02N250S Fig. 8. Transconductance 300 300 250 TJ = - 40ºC 250 200 g f s - MilliSiemens ID - MilliAmperes Fig. 7. Input Admittance 350 TJ = 125ºC 25ºC - 40ºC 150 100 200 25ºC 150 125ºC 100 50 50 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 50 100 150 VGS - Volts 250 300 350 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 800 VDS = 1000V 9 700 I D = 100mA 8 600 I G = 1mA 7 500 VGS - Volts IS - MilliAmperes 200 ID - MilliAmperes TJ = 125ºC 400 TJ = 25ºC 300 6 5 4 3 200 2 100 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 1 2 3 VSD - Volts 4 5 6 7 8 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1,000 10 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 10 1 0.1 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA02N250 IXTH02N250 IXTV02N250S Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC 25µs RDS(on) Limit @ T C = 75ºC 1,000 1,000 RDS(on) Limit 25µs 1ms 100 100µs ID - M illiAm peres ID - M illiAm peres 100µs 100 10ms 1ms 10ms 100ms TJ = 150ºC DC 10 100 100ms TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 1,000 VDS - Volts © 2012 IXYS CORPORATION, All Rights Reserved 10,000 10 100 DC 1,000 10,000 VDS - Volts IXYS REF: T_02N250(2P)04-19-12