IXFK44N50F IXFX44N50F HiPerRFTM Power MOSFETs VDSS ID25 = 500V = 44A Ω ≤ 120mΩ ≤ 250ns RDS(on) F-Class: MegaHertz Switching trr Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 44 184 44 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 500 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. Nm/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md FC Mounting Torque Mounting Force Weight TO-264 TO-247 (TO-264) (TO-247) Maximum Ratings 500 500 V V D Tab S PLUS247 (IXFX) Tab G = Gate S = Source D = Drain Tab = Drain Features z z z z z RF Capable MOSFETs Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z z Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2009 IXYS CORPORATION,All Rights Reserved z V z 5.5 V z ± 100 nA z 100 μA 2 mA 120 mΩ z z z DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies, > 500kHz Switching DC Choppers 13.5 MHz Industrial Applications Pulse Generation Laser Drivers RF Amplifiers DS98731C(10/09) IXFK44N50F IXFX44N50F Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 22 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 AA Outline 32 S 5500 pF 990 pF 330 pF 23 ns 18 ns 53 ns 8 ns 156 nC Dim. 37 nC 90 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.26 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 164 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 22A, -di/dt = 100A/μs 250 ns μC A 1.1 12.0 VR = 100V, VGS = 0V Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK44N50F IXFX44N50F Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 140 VGS = 10V 9V 40 VGS = 10V 120 100 8V 30 ID - Amperes ID - Amperes 35 25 20 7V 15 9V 80 60 8V 40 10 7V 20 5 6V 6V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 5 10 15 20 30 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 45 3.0 VGS = 10V 9V 8V 40 VGS = 10V 2.6 35 R DS(on) - Normalized I D = 44A 30 ID - Amperes 25 VDS - Volts VDS - Volts 25 7V 20 15 2.2 I D = 22A 1.8 1.4 1.0 6V 10 0.6 5 5V 0 0.2 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 3.0 45 VGS = 10V TJ = 125ºC 2.6 40 35 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 1.4 30 25 20 15 TJ = 25ºC 10 1.0 5 0.6 0 0 10 20 30 40 50 60 70 80 ID - Amperes © 2009 IXYS CORPORATION,All Rights Reserved 90 100 110 120 130 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK44N50F IXFX44N50F Fig. 7. Input Admittance Fig. 8. Transconductance 100 70 TJ = - 40ºC 90 60 80 50 g f s - Siemens ID - Amperes 70 60 TJ = 125ºC 25ºC - 40ºC 50 40 30 25ºC 40 125ºC 30 20 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 200 220 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 16 120 14 VDS = 250V I D = 22A I G = 10mA 12 VGS - Volts IS - Amperes 100 80 60 10 8 6 TJ = 125ºC 40 4 TJ = 25ºC 2 20 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 20 40 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000.0 10,000 RDS(on) Limit Ciss 100.0 25µs ID - Amperes Capacitance - PicoFarads 60 Coss 1,000 100µs 10.0 100ms 1.0 TJ = 150ºC Crss 1ms DC 10ms TC = 25ºC Single Pulse f = 1 MHz 100 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK44N50F IXFX44N50F Fig. 13. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION,All Rights Reserved IXYS REF: F_44N50F(8F)10-09-09