IXFK180N10 IXFX180N10 HiperFETTM Power MOSFETs VDSS ID25 RDS(on) Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 100 V Maximum Ratings VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C ( Chip Capabitlty) 180 A ILRMS IDM Leads Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 160 720 A A IA EAS TC = 25°C TC = 25°C 180 3 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 560 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Force MountingTorque Weight PLUS247 TO-264 100V 180A Ω 8mΩ TO-264 (IXFK) Symbol TL TSOLD = = ≤ (PLUS247) (TO-264) 20..120/4.5..27 1.13/10 N/lb. Nm/lb.in. 6 10 g g G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z z z International Standard Packages High Current Handling Capability Avalanche Rated Low RDS(on) HDMOSTM Process Fast intrinsic diode Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 4.0 V ±100 nA TJ = 125°C z z Applications z z 100 μA 2 mA z 8 mΩ z z z © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Temperature and Lighting Controls DS98552D(02/09) IXFK180N10 IXFX180N10 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 45 VDS = 10V, ID = 60A, Note 1 Ciss Coss 76 S 10.90 nF 3.55 nF 1.94 nF 50 90 140 65 ns ns ns ns 390 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 55 nC 195 nC TO-264 (IXFK) Outline 0.22 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 90A, -di/dt = 100A/μs 1.1 13 VR = 50V, VGS = 0V PLUS 247TM (IXFX) Outline 250 ns μC A Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK180N10 IXFX180N10 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 350 VGS = 10V 9V 8V 160 VGS = 10V 9V 300 140 7V ID - Amperes ID - Amperes 250 8V 120 100 80 6V 200 7V 150 6V 60 100 40 50 20 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 180 2.2 VGS = 10V 9V 8V 160 VGS = 10V 2.0 120 RDS(on) - Normalized 140 ID - Amperes 2.0 VDS - Volts VDS - Volts 7V 100 6V 80 60 1.8 1.6 I D = 180A 1.4 I D = 90A 1.2 1.0 40 5V 0.8 20 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 180 2.0 External Lead Current Limit 1.9 VGS = 10V 1.8 15V 160 ----140 TJ = 125ºC 1.7 120 1.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.5 1.4 1.3 100 80 60 1.2 1.1 40 TJ = 25ºC 1.0 20 0.9 0.8 0 0 30 60 90 120 150 180 210 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 240 270 300 330 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_180N10(9X)2-24-09-B IXFK180N10 IXFX180N10 Fig. 8. Transconductance Fig. 7. Input Admittance 300 140 275 130 120 250 TJ = - 40ºC 25ºC 125ºC 225 110 25ºC 100 g f s - Siemens 200 ID - Amperes TJ = - 40ºC 175 150 125 100 90 125ºC 80 70 60 50 40 75 30 50 20 25 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 Fig. 10. Gate Charge 10 350 VDS = 50V 9 I D = 90A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 150 ID - Amperes 200 TJ = 125ºC 150 5 4 3 TJ = 25ºC 100 6 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 50 100 VSD - Volts 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.000 100 0.100 Z(th)JC - ºC / W Capacitance - NanoFarads f = 1 MHz Ciss 10 Coss 0.010 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFK180N10 IXFX180N10 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 100 1ms External Lead Limit 10ms 100ms 10 100µs ID - Amperes ID - Amperes 100 1ms 10ms 10 100ms DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC DC Single Pulse 1 1 1 10 VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: F_180N10(9X)2-24-09-B