PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS(on) = 500 V = 44 A ≤ 140 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 44 110 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 44 55 1.7 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 650 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque(TO-247) TO-3P (IXTQ) G 6 (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l l 1.13/10 Nm/lb.in. Weight D International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect g Advantages l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250µA 500 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C l l Easy to mount Space savings High power density V 5.0 V ±10 nA 25 250 µA µA 140 mΩ DS99372E(03/06) IXTQ 44N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 20 32 S 5440 pF 639 pF Crss 40 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns td(off) RG = 3 Ω (External) 75 ns tf 21 ns Qg(on) 98 nC 35 nC 30 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.19° C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-3P) Source-Drain Diode ° C/W 0.21 Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 44 A ISM Repetitive 110 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 22 A -di/dt = 100 A/µs 400 ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 44N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 100 V GS = 10V 7V 40 80 35 70 30 25 I D - Amperes I D - Amperes V GS = 10V 8V 90 6V 20 15 7V 60 50 40 6V 30 10 20 5V 5 10 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 4. R DS(on) Normalized to ID = 22A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 45 V GS = 10V 7V 40 V GS = 10V 2.8 R DS(on) - Normalized I D - Amperes 35 6V 30 25 20 15 5V 2.4 2 I D = 44A I D = 22A 1.6 1.2 10 0.8 5 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V DS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current v s. Case Temperature 3.2 50 V GS = 10V 45 2.8 TJ = 125ºC 2.6 40 2.4 35 I D - Amperes R DS(on) - Normalized 25 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 22A Value vs. Drain Current 3.0 0 2.2 2.0 1.8 1.6 30 25 20 15 1.4 TJ = 25ºC 1.2 10 5 1.0 0 0.8 0 10 20 30 40 50 I D - Amperes © 2006 IXYS All rights reserved 60 70 80 90 100 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXTQ 44N50P Fig. 8. Transconductance Fig. 7. Input Admittance 65 60 60 55 55 50 50 45 g f s - Siemens I D - Amperes 45 40 35 30 TJ = 125ºC 25ºC - 40ºC 25 20 35 30 25 20 15 15 10 10 5 5 0 TJ = - 40ºC 25ºC 125ºC 40 0 3.5 4 4.5 5 5.5 6 0 6.5 10 20 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 70 Fig. 10. Gate Charge 10 140 V DS = 250V 9 120 I D = 22A 8 100 I G = 10mA 7 V GS - Volts I S - Amperes 30 I D - Amperes 80 TJ = 125ºC 60 TJ = 25ºC 40 6 5 4 3 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 V SD - Volts 30 40 50 60 70 80 90 100 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 TJ = 150ºC TC = 25ºC Capacitance - PicoFarads C iss RDS(on) Limit I D - Amperes 1,000 C oss 100 25µs 100µs 10 100 1ms DC 10ms C rss f = 1 MHz 1 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXTQ 44N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds © 2006 IXYS All rights reserved IXYS REF: T_44N50P (8J) 03-21-06-B.xls