IXYS IXTQ52N30P

Advanced Technical Information
IXTQ52N30P
IXTT52N30P
PolarHTTM
Power MOSFET
VDSS
ID25
= 300 V
= 52 A
Ω
= 66 mΩ
RDS(on)
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
52
A
IDM
TC = 25°C, pulse width limited by TJM
150
A
IAR
TC = 25°C
52
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-3P
TO-268
(TO-3P)
1.13/10 Nm/lb.in.
5.5
5.0
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
300
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
G
57
5.0
V
±100
nA
25
250
µA
µA
66
mΩ
C
(TAB)
E
TO-268 (IXTT)
G
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
Features
z
z
z
V
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
g
g
TO-3P (IXTQ)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99115A(10/04)
IXTQ 52N30P
IXTT 52N30P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
30
S
3490
pF
550
pF
C rss
130
pF
td(on)
24
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
20
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
22
ns
td(off)
RG = 4 Ω (External)
60
ns
20
ns
110
nC
25
nC
53
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.31
(TO-3P)
Source-Drain Diode
0.21
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
52
A
ISM
Repetitive
150
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
Trr
IF = 25A
-di/dt = 100 A/µs
VR = 100V
QRM
TO-3P (IXTQ) Outline
250
ns
3.0
µC
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTQ 52N30P
IXTT 52N30P
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
150
55
VGS = 10V
9V
VGS = 10V
8V
50
125
45
7V
35
I D - Amperes
I D - Amperes
40
30
25
6V
20
8V
100
75
7V
50
15
10
5
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
V D S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
55
35
30
6V
20
15
10
15
20
V D S - Volts
25
VGS = 10V
2.6
40
25
10
3
2.8
R D S (on) - Normalized
45
5
Fig. 4. RDS(on) Norm alized to ID25 Value vs.
Junction Tem perature
VGS = 10V
8V
7V
50
I D - Amperes
6V
25
5V
5V
2.4
2.2
2
I D = 52A
1.8
1.6
I D = 26A
1.4
1.2
1
0.8
5
0.6
0
0.4
0
1
2
3
4
5
6
7
8
9
-50
10
-25
V D S - Volts
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Tem perature
55
50
VGS = 10V
3.4
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to ID25
Value vs. ID
3.8
0
40
I D - Amperes
R D S (on) - Normalized
45
3
2.6
TJ = 125ºC
2.2
1.8
35
30
25
20
15
1.4
10
TJ = 25ºC
1
5
0.6
0
0
25
50
75
100
I D - Amperes
© 2004 IXYS All rights reserved
125
150
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTQ 52N30P
IXTT 52N30P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
60
100
90
50
80
60
50
40
30
30
20
TJ = 125ºC
25ºC
-40ºC
20
10
TJ = -40ºC
25ºC
125ºC
40
g f s - Siemens
I D - Amperes
70
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
10
20
30
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
50
60
70
80
90
100
Fig. 10. Gate Charge
10
150
VDS = 150V
I D = 26A
I G = 10mA
9
125
8
7
100
VG S - Volts
I S - Amperes
40
I D - Amperes
75
50
6
5
4
3
TJ = 125ºC
2
TJ = 25ºC
25
1
0
0
0.4
0.6
0.8
1
1.2
1.4
0
20
40
60
80
120
Fig. 12. Forw ard-Bias Safe
Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TC = 25ºC
R DS(on) Limit
I D - Amperes
C iss
Capacitance - pF
100
Q G - nanoCoulombs
V S D - Volts
1000
C oss
25µs
100
1ms
10ms
DC
10
C rss
1
100
0
5
10
15
20
25
V D S - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXTQ 52N30P
IXTT 52N30P
Fig. 13. Maximum Transient Therm al Resistance
R (th) J C - (ºC/W)
1.00
0.10
0.01
1
10
100
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
1000