PolarHVTM HiPerFET Power MOSFET IXFR 24N80P VDSS ID25 = = ≤ ≤ RDS(on) trr (Electrically Isolated Back Surface) 800 13 420 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 55 A IAR TC = 25°C 12 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TJ TJM Tstg TL TSOLD VISOL FC Weight TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, 1 minute Mounting force -55 ... +150 150 -55 ... +150 300 260 2500 °C °C °C °C °C V~ VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V V 5.0 V ±100 nA 25 1000 μA μA 420 mΩ Isolated Tab S G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard package z Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 800 VGS = 10 V, ID = IT (note 1) Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % D Advantages VGS = 0 V, ID = 250 μA TJ = 125°C N/lb g G Characteristic Values Min. Typ. Max. BVDSS © 2006 IXYS All rights reserved W 20..120/4.6..27 5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) 208 ISOPLUS247 (IXFR) E153432 z z Easy to mount Space savings High power density DS99600E(07/06) IXFR 24N80P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, pulse test 15 Ciss Coss 25 S 7200 pF 470 pF 26 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 32 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 27 ns td(off) RG =2 Ω (External) 75 ns 24 ns 105 nC 30 nC 33 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd RthJC 0.6 °C/W °C/W 0.15 RthCS ISOPLUS247 (IXFR) Outline Note 1: Test current IT = 12 A Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive 55 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/μs 250 ns QRM IRM VR = 100V, VGS = 0 V 0.8 6.0 μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2 IXFR 24N80P Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 55 24 22 20 45 18 40 6V 6V 16 ID - Amperes ID - Amperes VGS = 10V 7V 50 VGS = 10V 14 12 10 5V 8 35 30 25 20 15 6 4 10 2 5 0 5V 0 0 1 2 3 4 5 6 7 8 0 9 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.1 24 VGS = 10V 6V 22 VGS = 10V 2.8 20 2.5 16 RDS(on) - Normalized ID - Amperes 18 5V 14 12 10 8 6 2.2 I D = 24A 1.9 I D = 12A 1.6 1.3 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 VDS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current 16 3 VGS = 10V 2.8 14 TJ = 125ºC 2.6 12 2.4 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 2 1.8 1.6 1.4 10 8 6 4 TJ = 25ºC 1.2 2 1 0 0.8 0 5 10 15 20 25 30 I D - Amperes © 2006 IXYS All rights reserved 35 40 45 50 55 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFR 24N80P Fig. 8. Transconductance Fig. 7. Input Admittance 40 65 36 60 55 32 50 g f s - Siemens ID - Amperes 28 24 20 TJ = 125ºC 25ºC - 40ºC 16 45 40 TJ = - 40ºC 25ºC 125ºC 35 30 25 20 12 15 8 10 4 5 0 0 3 3.5 4 4.5 5 5.5 6 0 5 10 15 VGS - Volts 20 25 30 35 40 45 50 100 110 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 36 10 32 9 28 8 VDS = 400V 7 24 VGS - Volts IS - Amperes I D = 12A I G = 10mA 20 TJ = 125ºC 16 12 6 5 4 3 TJ = 25ºC 8 2 4 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 10 20 VSD - Volts 30 40 50 60 70 80 90 QG - NanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10,000 1.00 1,000 R(th)JC - ºC / W Capacitance - PicoFarads C iss C oss 100 f = 1 MHz C rss 10 0 5 0.10 10 15 20 25 30 35 40 0.01 0.0001 VDS - Volts 0.001 0.01 0.1 1 10 P ulse W idth - S e conds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N80P (8J) 6-22-06.xls