IXTQ 69N30P IXTT 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS Transient ±20 V ±30 V 69 A 200 A VGSM ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 69 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns TO-3P (IXTQ) G D TO-268 (IXTT) G TJ ≤ 150°C, RG = 4 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C G = Gate S = Source Mounting torque Weight TO-3P TO-268 (TO-3P) ! 1.13/10 Nm/lb.in. 5.5 5.0 g g S D (TAB) D = Drain TAB = Drain Features ! Md (TAB) S ! International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. ! VDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 204 IXYS All rights reserved ! V 5.0 V ±100 nA 25 250 µA µA 49 mΩ ! Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99078A(04/04) IXTQ 69N30P IXTT 69N30P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 48 S 4960 pF 760 pF 190 pF 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 25 ns td(off) RG = 4 Ω (External) 75 ns 27 ns 156 180 nC 32 nC 79 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.25 K/W (TO-247, TO-3P) Source-Drain Diode 0.21 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 69 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V TJM IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM TO-3P (IXTQ) Outline 250 ns 3.0 µC TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 69N30P IXTT 69N30P Fig. 1. Output Characte ris tics @ 25 De g. C Fig. 2. Extende d Output Characteris tics @ 25 deg. C 180 70 VGS = 10V 8V 7V 60 8V 140 I D - Amperes 50 I D - Amperes VGS = 10V 9V 160 40 30 6V 120 100 7V 80 60 20 6V 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 10 12 14 16 18 20 Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature Fig. 3. Output Characteristics @ 125 Deg. C 70 3 VGS = 10V 8V 7V 2.8 50 40 6V 30 20 VGS = 10V 2.6 R D S (on) - Normalized 60 I D - Amperes 8 V D S - Volts V D S - Volts 5V 2.4 2.2 2 I D = 69A 1.8 1.6 I D = 34.5A 1.4 1.2 1 0.8 10 0.6 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig. 6. Drain Curre nt vs. Case Te m pe rature 3.8 70 VGS = 10V 3.4 60 3 50 I D - Amperes R D S (on) - Normalized 0 2.6 TJ = 125ºC 2.2 1.8 40 30 20 1.4 TJ = 25ºC 1 10 0.6 0 0 20 40 60 80 100 120 I D - Amperes © 204 IXYS All rights reserved 140 160 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 69N30P IXTT 69N30P Fig. 8. Transconductance 100 100 90 90 80 80 70 70 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 60 50 40 30 60 50 40 30 TJ = 125ºC 25ºC -40ºC 20 10 TJ = -40ºC 25ºC 125ºC 20 10 0 0 4 4.5 5 5.5 6 6.5 7 0 20 40 200 10 180 9 160 8 140 7 120 100 80 100 120 140 VDS = 150V I D = 34.5A I G = 10mA 6 5 4 3 TJ = 125ºC 2 40 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 Q G - nanoCoulombs V S D - Volts Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TC = 25ºC R DS(on) Limit C iss 25µs I D - Amperes Capacitance - pF 80 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 60 I D - Amperes V G S - Volts C oss 1000 100 1ms 10ms DC 10 C rss 1 100 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTQ 69N30P IXTT 69N30P Fig. 13. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 204 IXYS All rights reserved 1000