IXTH110N25T IXTV110N25TS TrenchTM Power MOSFETs VDSS ID25 = 250V = 110A ≤ 24mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 IL(RMS) TC = 25°C External Lead Current Limit 110 75 A A IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA EAS TC = 25°C TC = 25°C 25 1 A J PD TC = 25°C 694 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns -55 to +150 °C TJ TJM +150 °C Tstg -55 to +150 °C TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (to-247) FC Mounting force (PLUS220SMD) Weight TO-247 PLUS220SMD 1.13/10 Nm/lb.in. 11..65/2.5..14.6 N/lb. 6 4 g g D D (Tab) S PLUS220SMD(IXTV_S) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features International Standard Packages Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) z z Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 z z V 5.0 V ±200 nA 5 μA 250 μA 24 mΩ z Applications z z z z z z © 2012 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies DS99904B(05/12) IXTH110N25T IXTV110N25TS Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd TO-247 Outline 110 S 9400 pF 850 pF 55 pF 19 ns 27 ns 60 ns 27 ns 157 nC 40 nC 50 nC 0.18 °C/W RthJC RthCS °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 350 A VSD IF = 55A, VGS = 0V, Note 1 1.2 V trr IRM QRM IF = 55A, -di/dt = 250A/μs, VR = 100V, VGS = 0V Notes: 170 27 2.3 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD Outline ns A μC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole package, RDS(ON) kelvin test contact location must be 5mm or less from the package body. Terminals: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH110N25T IXTV110N25TS Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 250 VGS = 10V 8V 7V 100 200 ID - Amperes 6V 80 ID - Amperes VGS = 10V 8V 7V 60 5.5V 40 150 6V 100 50 20 5V 5V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 2.8 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature 20 3.2 VGS = 10V 8V 7V 100 6V R DS(on) - Normalized ID - Amperes 80 60 40 VGS = 10V 2.8 5V 20 2.4 I D = 110A 2.0 I D = 55A 1.6 1.2 0.8 0.4 0 0 1 2 3 4 5 -50 6 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 80 VGS = 10V 3.0 External Lead Current Limit 70 TJ = 125ºC 60 2.6 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 1.4 50 40 30 20 TJ = 25ºC 1.0 10 0.6 0 0 50 100 150 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTH110N25T IXTV110N25TS Fig. 8. Transconductance Fig. 7. Input Admittance 160 180 140 160 120 g f s - Siemens ID - Amperes TJ = - 40ºC 140 120 TJ = 125ºC 25ºC - 40ºC 100 80 25ºC 100 60 125ºC 80 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 20 40 60 VGS - Volts 100 120 140 160 120 140 160 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 9 250 VDS = 125V I D = 25A 8 I G = 10mA 7 VGS - Volts 200 IS - Amperes 80 ID - Amperes 150 100 TJ = 125ºC 6 5 4 3 TJ = 25ºC 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 60 VSD - Volts 80 100 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1 Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.1 0.01 Crss 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXTH110N25T IXTV110N25TS Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 30 32 RG = 2Ω, VGS = 15V t r - Nanoseconds t r - Nanoseconds 26 I D = 110A 24 I RG = 2Ω, VGS = 15V 30 VDS = 125V 28 D = 55A VDS = 125V TJ = 25ºC 28 26 24 22 TJ = 125ºC 22 20 20 18 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 60 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 25 30 23 25 20 4 5 6 7 8 9 td(off) - - - - 30 26 62 I D = 110A 22 58 21 18 54 19 14 25 10 35 45 55 td(off) - - - - 85 95 105 115 50 125 110 70 TJ = 125ºC TJ = 25ºC 60 22 50 200 I D = 55A, 110A VDS = 125V t f - Nanoseconds 26 td(off) - - - - TJ = 125ºC, VGS = 15V 90 t d ( o f f ) - Nanoseconds 80 TJ = 25ºC t d ( o f f ) - Nanoseconds VDS = 125V 240 tf 90 RG = 2Ω, VGS = 15V t f - Nanoseconds 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 24 65 TJ - Degrees Centigrade 32 28 66 I D = 55A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 70 RG = 2Ω, VGS = 15V RG - Ohms 30 120 VDS = 125V t f - Nanoseconds t r - Nanoseconds 35 3 110 t d ( o f f ) - Nanoseconds 27 = 110A, 55A t d ( o n ) - Nanoseconds VDS = 125V 40 2 34 29 TJ = 125ºC, VGS = 15V D 100 74 tf I 90 38 31 tr 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 45 70 ID - Amperes 70 160 50 120 30 80 TJ = 125ºC 20 20 30 40 50 60 70 80 90 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 100 110 40 120 10 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_110N25T(8W)5-14-12-B