IXYS IXTV110N25TS

IXTH110N25T
IXTV110N25TS
TrenchTM
Power MOSFETs
VDSS
ID25
= 250V
= 110A
≤ 24mΩ
Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-247 (IXTH)
G
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
250
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
250
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
IL(RMS)
TC = 25°C
External Lead Current Limit
110
75
A
A
IDM
TC = 25°C, Pulse Width Limited by TJM
300
A
IA
EAS
TC = 25°C
TC = 25°C
25
1
A
J
PD
TC = 25°C
694
W
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
-55 to +150
°C
TJ
TJM
+150
°C
Tstg
-55 to +150
°C
TL
1.6mm (0.063in) from Case for 10s
300
°C
TSOLD
Plastic Body for 10s
260
°C
Md
Mounting Torque (to-247)
FC
Mounting force (PLUS220SMD)
Weight
TO-247
PLUS220SMD
1.13/10
Nm/lb.in.
11..65/2.5..14.6
N/lb.
6
4
g
g
D
D (Tab)
S
PLUS220SMD(IXTV_S)
G
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
z
High Current Handling Capability
z
Fast Intrinsic Rectifier
z
Low RDS(on)
z
z
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
250
VGS(th)
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
z
z
V
5.0
V
±200
nA
5
μA
250
μA
24 mΩ
z
Applications
z
z
z
z
z
z
© 2012 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
DS99904B(05/12)
IXTH110N25T
IXTV110N25TS
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
65
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
TO-247 Outline
110
S
9400
pF
850
pF
55
pF
19
ns
27
ns
60
ns
27
ns
157
nC
40
nC
50
nC
0.18 °C/W
RthJC
RthCS
°C/W
0.25
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
110
A
ISM
Repetitive, Pulse Width Limited by TJM
350
A
VSD
IF = 55A, VGS = 0V, Note 1
1.2
V
trr
IRM
QRM
IF = 55A, -di/dt = 250A/μs,
VR = 100V, VGS = 0V
Notes:
170
27
2.3
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220SMD Outline
ns
A
μC
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-hole package, RDS(ON) kelvin test contact location must be
5mm or less from the package body.
Terminals: 1 - Gate 2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTH110N25T
IXTV110N25TS
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
250
VGS = 10V
8V
7V
100
200
ID - Amperes
6V
80
ID - Amperes
VGS = 10V
8V
7V
60
5.5V
40
150
6V
100
50
20
5V
5V
0
0
0
0.4
0.8
1.2
1.6
2
2.4
0
2.8
2
4
6
8
10
12
14
16
18
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.
Junction Temperature
20
3.2
VGS = 10V
8V
7V
100
6V
R DS(on) - Normalized
ID - Amperes
80
60
40
VGS = 10V
2.8
5V
20
2.4
I D = 110A
2.0
I D = 55A
1.6
1.2
0.8
0.4
0
0
1
2
3
4
5
-50
6
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.
Drain Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.4
80
VGS = 10V
3.0
External Lead Current Limit
70
TJ = 125ºC
60
2.6
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
2.2
1.8
1.4
50
40
30
20
TJ = 25ºC
1.0
10
0.6
0
0
50
100
150
ID - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
200
250
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTH110N25T
IXTV110N25TS
Fig. 8. Transconductance
Fig. 7. Input Admittance
160
180
140
160
120
g f s - Siemens
ID - Amperes
TJ = - 40ºC
140
120
TJ = 125ºC
25ºC
- 40ºC
100
80
25ºC
100
60
125ºC
80
60
40
40
20
20
0
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
0
20
40
60
VGS - Volts
100
120
140
160
120
140
160
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
300
9
250
VDS = 125V
I D = 25A
8
I G = 10mA
7
VGS - Volts
200
IS - Amperes
80
ID - Amperes
150
100
TJ = 125ºC
6
5
4
3
TJ = 25ºC
50
2
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
1.4
20
40
60
VSD - Volts
80
100
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
100,000
1
Ciss
10,000
Z (th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
1,000
0.1
0.01
Crss
100
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
0.1
1
10
IXTH110N25T
IXTV110N25TS
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
32
RG = 2Ω, VGS = 15V
t r - Nanoseconds
t r - Nanoseconds
26
I
D
= 110A
24
I
RG = 2Ω, VGS = 15V
30
VDS = 125V
28
D = 55A
VDS = 125V
TJ = 25ºC
28
26
24
22
TJ = 125ºC
22
20
20
18
25
35
45
55
65
75
85
95
105
115
125
20
30
40
50
60
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
td(on) - - - -
25
30
23
25
20
4
5
6
7
8
9
td(off) - - - -
30
26
62
I D = 110A
22
58
21
18
54
19
14
25
10
35
45
55
td(off) - - - -
85
95
105
115
50
125
110
70
TJ = 125ºC
TJ = 25ºC
60
22
50
200
I D = 55A, 110A
VDS = 125V
t f - Nanoseconds
26
td(off) - - - -
TJ = 125ºC, VGS = 15V
90
t d ( o f f ) - Nanoseconds
80
TJ = 25ºC
t d ( o f f ) - Nanoseconds
VDS = 125V
240
tf
90
RG = 2Ω, VGS = 15V
t f - Nanoseconds
75
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
24
65
TJ - Degrees Centigrade
32
28
66
I D = 55A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
tf
70
RG = 2Ω, VGS = 15V
RG - Ohms
30
120
VDS = 125V
t f - Nanoseconds
t r - Nanoseconds
35
3
110
t d ( o f f ) - Nanoseconds
27
= 110A, 55A
t d ( o n ) - Nanoseconds
VDS = 125V
40
2
34
29
TJ = 125ºC, VGS = 15V
D
100
74
tf
I
90
38
31
tr
80
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50
45
70
ID - Amperes
70
160
50
120
30
80
TJ = 125ºC
20
20
30
40
50
60
70
80
90
ID - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
100
110
40
120
10
40
2
3
4
5
6
7
8
9
10
RG - Ohms
IXYS REF: T_110N25T(8W)5-14-12-B