Advance Technical Information TrenchT2TM HiperFET N-Channel Power MOSFET FMM110-015X2F 3 3 VDSS ID25 RDS(on) trr(typ) T1 55 = = ≤ = 150V 53A Ω 20mΩ 85ns 4 4 Phase Leg Topology T2 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C 2500 ~V 300 260 °C °C 20..120 / 4.5..27 N/lb. TJ TJM Tstg 1 Isolated Tab 5 VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force Symbol Test Conditions VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSM Transient ± 30 V z ID25 TC = 25°C 53 A z IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA TC = 25°C 55 A EAS TC = 25°C 800 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C PD TC = 25°C Features z Maximum Ratings z z Advantages z z 10 V/ns 180 W z z Test Conditions CP Coupling Capacitance Between Shorted Pins and Mounting Tab in the Case dS ,dA dS ,dA Pin - Pin Pin - Backside Metal Characteristic Values Min. Typ. Max. 40 z pF z z z Weight © 2009 IXYS CORPORATION, All Rights Reserved 1.7 5.5 mm mm 9 Easy to Mount Space Savings High Power Density Applications z Symbol Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Low QG Low Drain-to-Tab Capacitance Low Package Inductance z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications g DS100145(04/09) FMM110-015X2F Symbol Test Conditions2 (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 55A, Note 1 gfs VDS = 10V, ID = 55A, Note 1 V 4.5 V ± 200 nA 2 μA 500 μA TJ = 150°C 20 mΩ 75 Ciss Coss 115 S 8600 pF 685 pF 77 pF VGS = 0V, VDS = 25 V, f = 1 MHz Crss td(on) Resistive Switching Times 33 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 55A 16 ns td(off) RG = 3.3Ω (External) 33 ns 18 ns 150 nC 42 nC 46 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 55A Qgd Ref: IXYS CO 0077 R0 0.83 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Characteristic Values TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. Symbol Test Conditions3 IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 440 A VSD IF = 100A, VGS = 0V, Note 1 1.3 V trr IRM IF = 55A, -di/dt = 100A/μs QRM ISOPLUS i4-PakTM Outline VR = 100V, VGS = 0V 85 6.80 ns A 0.29 μC Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMM110-015X2F Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 110 VGS = 15V 10V 9V 8V 100 90 80 250 7V 70 ID - Amperes ID - Amperes VGS = 15V 10V 8V 300 60 50 6V 40 200 7V 150 100 30 20 50 5V 10 6V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 110 12 14 16 3.4 VGS = 15V 10V 9V 8V 100 90 VGS = 10V 3.0 2.6 70 RDS(on) - Normalized 80 ID - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 7V 60 50 40 30 20 6V I D = 110A 2.2 I D = 55A 1.8 1.4 1.0 0.6 10 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 5.0 120 VGS = 10V 15V - - - - 4.5 110 TJ = 175ºC 100 4.0 90 3.5 ID - Amperes RDS(on) - Normalized 8 VDS - Volts VDS - Volts 3.0 2.5 2.0 80 70 60 50 40 30 1.5 TJ = 25ºC 1.0 20 10 0 0.5 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 FMM110-015X2F Fig. 7. Input Admittance 180 140 160 TJ = - 40ºC 140 120 TJ = 150ºC 25ºC - 40ºC 100 g f s - Siemens ID - Amperes Fig. 8. Transconductance 160 80 60 40 25ºC 120 100 150ºC 80 60 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 120 140 160 Fig. 10. Gate Charge VDS = 75V 9 300 I D = 55A 8 I G = 10mA 7 VGS - Volts 250 IS - Amperes 100 10 350 200 150 6 5 4 3 TJ = 150ºC 100 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 60 80 100 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 f = 1 MHz RDS(on) Limit 10,000 25µs 100.0 Ciss ID - Amperes Capacitance - PicoFarads 80 ID - Amperes 1,000 Coss 100µs 10.0 1ms 100 1.0 TJ = 175ºC Crss 100ms 10ms TC = 25ºC Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1000 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_110N15T2(61)4-23-09-A FMM110-015X2F Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 VGS = 10V VGS = 10V 19 VDS = 75V t r - Nanoseconds VDS = 75V 18 t r - Nanoseconds RG = 3.3Ω RG = 3.3Ω 19 17 I 16 = 110A D 15 I D = 55A TJ = 125ºC 18 17 16 TJ = 25ºC 14 15 13 14 12 25 35 45 55 65 75 85 95 105 115 55 125 60 65 70 TJ - Degrees Centigrade 28 80 26 I D = 110A 60 120 50 I D = 55A 80 0 4 6 8 10 12 14 16 18 td(off) - - - - 24 60 22 50 I D = 55A, 110A 40 30 18 30 20 16 20 25 35 45 80 120 70 100 tf t f - Nanoseconds 50 TJ = 125ºC TJ = 25ºC 40 18 17 75 80 85 85 95 105 115 20 125 90 95 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved td(off) - - - 210 TJ = 125ºC, VGS = 10V 100 105 80 170 I D = 55A 60 130 40 90 I 30 20 20 110 0 D = 110A 50 10 2 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 60 t d(off) - Nanoseconds 21 70 75 VDS = 75V VDS = 75V 65 65 250 td(off) - - - - RG = 3.3Ω, VGS = 10V 60 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 55 70 TJ - Degrees Centigrade 23 19 110 VDS = 75V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 20 105 RG = 3.3Ω, VGS = 10V RG - Ohms 22 100 20 40 40 2 95 80 tf t f - Nanoseconds 70 160 90 t d(off) - Nanoseconds VDS = 75V 90 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 200 85 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 280 tr 80 ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 240 75 FMM110-015X2F Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_110N15T2(61)4-23-09-A