IXYS IXTA56N15T

Preliminary Technical Information
TrenchHVTM
Power MOSFET
IXTA56N15T
IXTP56N15T
VDSS
ID25
RDS(on)
= 150
V
= 56
A
Ω
≤
36 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
150
150
V
V
VGSM
Transient
± 30
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
56
140
A
A
IAR
EAS
TC = 25°C
TC = 25°C
5
500
A
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
3
V/ns
PD
Maximum Ratings
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque (TO-220)
Weight
TO-220
TO-263
S
(TAB)
TO-220 (IXTP)
300
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
(TAB)
D S
G = Gate
S = Source
D = Drain
TAB = Drain
1.13 / 10 Nm/lb.in.
3
2.5
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 μA
150
VGS(th)
VDS = VGS, ID = 250 μA
2.5
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
G
G
TC = 25°C
TL
TSOLD
TO-263 (IXTA)
TJ = 150°C
VGS = 10 V, ID = 28 A, Notes 1, 2
V
4.5
V
± 100
nA
5
200
μA
μA
36
mΩ
Features
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
175 °C Operating Temperature
Advantages
Easy to mount
z
Space savings
z
High power density
z
DS99800 (03/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTA56N15T
IXTP56N15T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
gfs
VDS= 10 V; ID = 28 A, Note 1
Typ.
23
39
S
2250
pF
330
pF
50
pF
Ciss
Coss
TO-263 (IXTA) Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
Max.
td(on)
Resistive Switching Times
16
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 28 A
17
ns
td(off)
RG = 5 Ω (External)
43
ns
18
ns
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
34
nC
10
nC
11
nC
0.50 °C/W
RthJC
RthCH
Pins:
TO-220
°C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS
VGS = 0 V
ISM
Min.
Characteristic Values
Typ.
Max.
56
A
Pulse width limited by TJM
160
A
VSD
IF =25 A, VGS = 0 V, Note 1
1.1
V
t rr
IF = 25 A, -di/dt = 100 A/μs
100
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
TO-220 (IXTP) Outline
ns
VR = 50 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
7,005,734 B2 7,157,338B2
7,063,975 B2
7,071,537
IXTA56N15T
IXTP56N15T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
150
VGS = 10V
9V
8V
55
50
VGS = 10V
9V
135
120
105
40
ID - Amperes
ID - Amperes
45
7V
35
30
25
20
75
60
7V
45
6V
15
8V
90
30
10
5
6V
15
5V
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2.2
2
4
6
8
10
14
16
18
20
22
24
26
28
Fig. 4. RDS(on) Normalized to ID = 28A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
3.8
60
VGS = 10V
9V
8V
55
50
VGS = 10V
3.4
3
RDS(on) - Normalized
45
ID - Amperes
12
VDS - Volts
V DS - Volts
40
7V
35
30
6V
25
20
15
I D = 56A
2.6
2.2
I D = 28A
1.8
1.4
1
10
0.6
5V
5
0
0.2
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-50
-25
0
Fig. 5. RDS(on) Normalized to ID = 28A Value
vs. Drain Current
50
75
100
125
150
175
Fig. 6. Drain Current vs. Case Temperature
60
3.8
55
VGS = 10V
3.4
TJ = 175ºC
50
3.0
45
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
VDS - Volts
2.6
2.2
1.8
40
35
30
25
20
1.4
15
TJ = 25ºC
10
1.0
5
0.6
0
0
10
20
30
40
50
60
70
80
90
I D - Amperes
© 2007 IXYS CORPORATION, All rights reserved
100 110 120 130
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTA56N15T
IXTP56N15T
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
55
TJ = - 40ºC
50
60
45
40
g f s - Siemens
ID - Amperes
50
40
TJ = 150ºC
25ºC
- 40ºC
30
20
25ºC
35
30
25
150ºC
20
15
10
10
5
0
0
3.4
3.8
4.2
4.6
5
5.4
5.8
6.2
6.6
7
0
10
20
VGS - Volts
30
40
50
60
70
30
35
I D - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
160
V DS = 75V
9
140
I D = 25A
8
I G = 10mA
120
100
VGS - Volts
IS - Amperes
7
80
TJ = 150ºC
60
6
5
4
TJ = 25ºC
3
40
2
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
1.3
5
VSD - Volts
10
15
20
25
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
C iss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
C oss
100
0.10
C rss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTA56N15T
IXTP56N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
18
19
RG = 5Ω
17
VGS = 15V
17
TJ = 25ºC
VDS = 75V
t r - Nanoseconds
t r - Nanoseconds
16
15
14
13
I D = 56A
12
I D = 28A
11
15
RG = 5Ω
13
V DS = 75V
V GS = 15V
11
10
9
TJ = 125ºC
9
8
7
25
35
45
55
65
75
85
95
105
115
125
14
17
20
23
26
19
17
16
11
10
t f - Nanoseconds
17
13
12
15
14
5
6
7
8
9
19
48
I D = 28A
18
44
16
42
15
40
36
12
25
35
45
22
td(off) - - - -
75
85
95
105
115
34
125
45
52
40
18
46
TJ = 25ºC
44
16
42
15
40
VDS = 75V
35
t f - Nanoseconds
48
90
I D = 28A, 56A
30
80
25
70
20
60
15
50
10
40
t d ( o f f ) - Nanoseconds
19
100
TJ = 125ºC, V GS = 15V
50
t d ( o f f ) - Nanoseconds
V DS = 75V
110
td(off) - - - -
tf
RG = 5Ω, V GS = 15V
t f - Nanoseconds
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
54
TJ = 125ºC
55
T J - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
21
56
38
I D = 56A
RG - Ohms
14
46
17
10 11 12 13 14 15 16 17 18 19 20
tf
53
50
VDS = 75V
13
8
17
50
52
14
9
20
47
t d ( o f f ) - Nanoseconds
15
14
44
RG = 5Ω, VGS = 15V
20
t d ( o n ) - Nanoseconds
t r - Nanoseconds
18
I D = 28A, 56A
41
54
21
V DS = 75V
38
td(off) - - - -
tf
TJ = 125ºC, VGS = 15V
16
35
22
td(on) - - - -
tr
32
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
18
29
I D - Amperes
T J - Degrees Centigrade
38
TJ = 125ºC
13
36
12
34
14 17 20 23 26 29 32 35 38 41 44 47 50 53 56
I D - Amperes
© 2007 IXYS CORPORATION, All rights reserved
5
30
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20
RG - Ohms
IXYS REF: T_56N15T (4G) 12-07-06.xls