IXTH200N10T IXTQ200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 100V = 200A Ω ≤ 5.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ 100 V VGSM Transient ± 30 V ID25 TC = 25°C 200 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 500 A IA TC = 25°C 40 A EAS TC = 25°C 1.5 J PD TC = 25°C 550 W -55 ... +175 °C TJ TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6.0 5.5 g g TL 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque Weight TO-247 TO-3P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.5 V ±200 nA TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved 4.5 5 μA 250 μA 5.5 mΩ G D (TAB) S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications DS99654A(10/08) IXTH200N10T IXTQ200N10T Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 60 C iss Coss VGS = 0V, VDS = 25V, f = 1MHz C rss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qgd TO-247 (IXTH) Outline 96 S 9400 pF 1087 pF 140 pF 35 ns 31 ns 45 ns 34 ns 152 nC 47 nC 47 nC 0.27 °C/W RthJC RthCH °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS Characteristic Values Min. Typ. Max. VGS = 0V 200 A ISM Repetitive, Pulse width limited by TJM 500 A VSD IF = 50A, VGS = 0V, Note 1 1.0 V t rr QRM IRM IF = 100A, VGS = 0V,-di/dt = 100A/μs 76 205 5.4 VR = 50V 1 2 ∅P 3 e Terminals: 1 - Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 2.2 2.54 .087 .102 A1 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 TO-3P (IXTQ) Outline ns nC A Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH200N10T IXTQ200N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 8V 180 160 250 ID - Amperes 140 ID - Amperes VGS = 10V 9V 8V 300 120 7V 100 80 6V 60 200 7V 150 100 6V 40 50 20 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 1 2 2.6 ID - Amperes 140 120 7V 100 80 6V 60 VGS = 10V 2.2 2.0 1.8 I D = 200A 1.6 I D = 100A 1.4 1.2 1.0 40 0.8 20 0.6 5V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 3.0 VGS = 10V 2.8 External Lead Current Limit 80 15V - - - - 2.6 70 TJ = 175ºC 2.4 2.2 ID - Amperes RDS(on) - Normalized 6 2.4 RDS(on) - Normalized 160 5 2.8 VGS = 10V 9V 8V 180 4 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 3 VDS - Volts VDS - Volts 2.0 1.8 1.6 60 50 40 30 1.4 1.2 20 1.0 10 TJ = 25ºC 0.8 0.6 0 0 40 80 120 160 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH200N10T IXTQ200N10T Fig. 8. Transconductance Fig. 7. Input Admittance 250 160 TJ = - 40ºC 225 140 200 120 g f s - Siemens ID - Amperes 175 150 125 TJ = 150ºC 25ºC - 40ºC 100 25ºC 100 150ºC 80 60 75 40 50 20 25 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 25 50 75 VGS - Volts 10 270 9 240 8 210 7 180 150 TJ = 150ºC 90 125 150 175 200 225 250 Fig. 10. Gate Charge 300 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 100 ID - Amperes VDS = 50V I D = 25A I G = 10mA 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1MHz Coss 1,000 0.10 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_200N10T(6V)9-30-08-D IXTH200N10T IXTQ200N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 34 32 RG = 3.3Ω 33 RG = 3.3Ω 31 VGS = 10V 32 VGS = 10V VDS = 50V 31 VDS = 50V 30 29 I D t r - Nanoseconds t r - Nanoseconds 33 = 50A 28 27 26 I 25 D TJ = 25ºC 30 29 28 27 TJ = 125ºC 26 = 25A 25 24 24 23 23 22 22 25 35 45 55 65 75 85 95 105 115 24 125 26 28 30 32 TJ - Degrees Centigrade TJ = 125ºC, VGS = 10V td(on) - - - - 80 65 I D = 50A 120 60 100 55 I D = 25A 80 50 60 45 40 40 20 35 0 4 6 8 10 12 14 16 18 36 60 34 55 I D = 50A 32 30 45 28 25 200 75 180 35 45 65 TJ = 25ºC 60 TJ = 25ºC 55 32 50 TJ = 125ºC 45 30 40 24 26 28 30 32 34 36 38 55 65 75 85 95 105 115 40 125 40 42 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 44 46 48 50 300 tf td(off) - - - - 275 TJ = 125ºC, VGS = 10V 160 250 VDS = 50V 140 225 120 200 100 175 I D = 25A 80 I D 150 = 50A 60 125 40 100 20 75 0 t d ( o f f ) - Nanoseconds 70 t f - Nanoseconds RG = 3.3Ω, VGS = 10V 80 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - 35 31 50 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance VDS = 50V 33 65 I D = 25A TJ - Degrees Centigrade tf 34 50 70 38 20 38 36 48 RG = 3.3Ω, VGS = 10V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 125ºC 46 td(off) - - - - RG - Ohms 37 44 VDS = 50V 30 2 42 t d ( o f f ) - Nanoseconds 70 140 40 75 VDS = 50V 160 40 75 tf t f - Nanoseconds tr 38 42 85 t d ( o n ) - Nanoseconds t r - Nanoseconds 220 180 36 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 200 34 ID - Amperes 50 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_200N10T(6V)9-30-08-D