IXYS IXTA80N10T

IXTA80N10T
IXTP80N10T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
100V
80A
14mΩ
Ω
TO-263 AA (IXTA)
G
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
80
220
A
A
IA
EAS
TC = 25°C
TC = 25°C
25
400
A
mJ
PD
TC = 25°C
230
W
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
10
V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220)
Weight
TO-263
TO-220
D (Tab)
300
260
°C
°C
1.13 / 10
Nm/lb.in.
2.5
3.0
g
g
TO-220AB (IXTP)
G
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
z
International Standard Packages
175°C Operating Temperature
z
Avalanche Rated
z
High Current Handling Capability
z
Fast Intrinsic Diode
z
Low RDS(on)
z
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
105
VGS(th)
VDS = VGS, ID = 100μA
2.5
IGSS
Applications
V
5.0
V
VGS = ± 20V, VDS = 0V
± 200
nA
IDSS
VDS = 105V, VGS= 0V
5
150
μA
μA
RDS(on)
VGS = 10V, ID = 25A, Note 1 & 2
TJ = 150°C
14 mΩ
z
z
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
Automotive
- Motor Drives
- DC/DC Conversion
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching Applications
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
DS99648A(11/09)
IXTA80N10T
IXTP80N10T
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
33
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 15Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
55
S
3040
pF
420
pF
90
pF
31
ns
54
ns
40
ns
48
ns
60
nC
21
nC
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
15
nC
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
0.65
RthJC
RthCS
TO-263 (IXTA) Outline
°C/W
°C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
TO-220 (IXTP) Outline
IS
VGS = 0V
80
A
ISM
Repetitive, Pulse Width Limited by TJM
220
A
VSD
IF = 25A, VGS = 0V, Note 1
1.1
V
trr
IF = 25A, -di/dt = 100A/μs
100
1. Gate
2. Drain
3. Source
ns
VR = 50V, VGS = 0V
Pins:
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. On through-kole packages RDS(on) Kelvin test contact location
must be 5 mm or less from the package body.
1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA80N10T
IXTP80N10T
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
280
80
VGS = 10V
9V
8V
70
VGS = 10V
240
200
ID - Amperes
ID - Amperes
60
50
7V
40
30
9V
160
8V
120
80
20
6V
7V
40
10
0
6V
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
2
4
6
8
80
14
16
18
20
2.8
VGS = 10V
9V
8V
70
R DS(on) - Normalized
50
7V
40
30
6V
20
VGS = 10V
2.4
60
ID - Amperes
12
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 150ºC
2.0
I D = 80A
1.6
I D = 40A
1.2
0.8
10
5V
0.4
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
2.4
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 40A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
4.6
4.2
80
VGS = 10V
15V - - - -
3.8
TJ = 175ºC
70
3.4
ID - Amperes
R DS(on) - Normalized
10
VDS - Volts
VDS - Volts
3.0
2.6
2.2
60
50
40
30
1.8
20
1.4
1.0
10
TJ = 25ºC
0.6
0
0
25
50
75
100
125
150
175
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
200
225
250
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
175
IXTA80N10T
IXTP80N10T
Fig. 8. Transconductance
Fig. 7. Input Admittance
140
80
120
70
60
g f s - Siemens
100
ID - Amperes
TJ = - 40ºC
80
60
TJ = 150ºC
25ºC
- 40ºC
40
25ºC
50
40
150ºC
30
20
20
10
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
8.0
20
40
60
VGS - Volts
80
100
120
140
160
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
240
200
9
VDS = 50V
8
I D = 25A
I G = 10mA
160
VGS - Volts
IS - Amperes
7
120
80
TJ = 150ºC
6
5
4
3
2
40
TJ = 25ºC
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
0
5
10
VSD - Volts
15
20
25
30
35
40
45
50
55
60
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal Impedance
1.00
10,000
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
0.10
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTA80N10T
IXTP80N10T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
80
70
VDS = 50V
55
D
TJ = 25ºC
70
t r - Nanoseconds
t r - Nanoseconds
VDS = 50V
60
I
RG = 15Ω , VGS = 10V
75
RG = 15Ω , VGS = 10V
65
= 30A
50
65
60
55
50
45
45
40
I
D
TJ = 125ºC
= 10A
40
35
35
25
35
45
55
65
75
85
95
105
115
10
125
12
14
16
18
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
95
tr
td(on) - - - -
85
65
120
55
I D = 10A
45
40
t f - Nanoseconds
I D = 30A
80
35
0
25
15
20
25
30
35
40
45
50
72
tf
46
60
44
56
43
42
48
41
44
40
40
39
35
45
78
160
55
70
140
75
85
95
105
115
36
125
54
TJ = 125ºC
42
46
40
38
TJ = 25ºC
38
30
22
24
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
26
28
30
230
VDS = 50V
t f - Nanoseconds
44
td(off) - - - -
TJ = 125ºC, VGS = 10V
120
190
I D = 10A
100
150
80
110
60
I
D
t d ( o f f ) - Nanoseconds
62
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
65
270
tf
td(off) - - - -
46
20
52
I D = 30A
25
VDS = 50V
18
64
VDS = 50V
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
RG = 15Ω, VGS = 10V
16
I D = 10A
TJ - Degrees Centigrade
tf
14
68
td(off) - - - -
RG = 15Ω, VGS = 10V
45
55
50
12
30
48
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
10
28
76
RG - Ohms
48
26
t d ( o f f ) - Nanoseconds
75
160
24
49
47
VDS = 50V
t d ( o n ) - Nanoseconds
t r - Nanoseconds
TJ = 125ºC, VGS = 10V
200
22
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
280
240
20
ID - Amperes
70
= 30A
40
30
15
20
25
30
35
40
45
50
55
RG - Ohms
IXYS REF: T_80N10T(3V)12-11-07-A