IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P PolarTM Power MOSFETs VDSS ID25 = 1000V = 1.4A ≤ 11.8Ω Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 1.4 3.0 A A IA EAS TC = 25°C TC = 25°C 1.4 100 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 63 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062) from Case for 10s Plastic Body for 10s FC Mounting Force (TO-263) 10..65/2.2..14.6 N/lb. Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G G = Gate S = Source z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 50μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z 4.5 V ±50 nA 5 μA 150 μA Ω z International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier High Power Density Easy to Mount Space Savings Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages z V 11.8 D (Tab) Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) DS Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99737B(08/11) IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS= 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Characteristic Values Min. Typ. Max 0.70 Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30Ω (External) Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-220 TO-220 (IXTP) Outline 1.10 S 450 27 6 pF pF pF 25 35 65 28 ns ns ns ns 17.8 2.8 9.9 nC nC nC 0.50 2.0 °C/W °C/W Pins: 1 - Gate 3 - Source 2 - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 1.4 A ISM Repetitive, Pulse Width Limited by TJM 4.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.4A, -di/dt = 100A/μs, VR = 100V, VGS = 0V Note 750 ns TO-252 (IXTY) Outline 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 (IXTA) Outline Pins: Dim. 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 2.2 1.4 VGS = 10V 7V 1.2 1.8 1.6 1 6V ID - Amperes ID - Amperes VGS = 10V 7V 2 0.8 0.6 1.4 6V 1.2 1 0.8 0.4 0.6 0.4 0.2 5V 5V 0.2 0 0 0 2 4 6 8 10 12 14 0 16 10 20 25 30 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs. Junction Temperature 3.0 VGS = 10V 7V 1 6V 0.8 0.6 0.4 VGS = 10V 2.6 R DS(on) - Normalized 1.2 5V 0.2 2.2 I D = 1.4A 1.8 I D = 0.7A 1.4 1.0 0.6 0 0.2 0 5 10 15 20 25 30 35 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 0.7A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 1.6 2.4 TJ = 125ºC VGS = 10V 2.2 1.4 2.0 1.2 1.8 1 ID - Amperes R DS(on) - Normalized 15 VDS - Volts 1.4 ID - Amperes 5 VDS - Volts 1.6 1.4 1.2 0.8 0.6 0.4 TJ = 25ºC 1.0 0.2 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 1.6 1.8 2 2.2 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P Fig. 7. Input Admittance Fig. 8. Transconductance 2 2.4 TJ = - 40ºC 1.8 2 1.6 g f s - Siemens ID - Amperes 1.4 1.2 1 TJ = 125ºC 25ºC - 40ºC 0.8 25ºC 1.6 1.2 125ºC 0.8 0.6 0.4 0.4 0.2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 0.2 0.4 0.6 0.8 1 VGS - Volts 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 5 10 4.5 9 4 8 VDS = 500V I D = 0.7A I G = 10mA 7 VGS - Volts IS - Amperes 3.5 3 2.5 TJ = 125ºC 2 TJ = 25ºC 1.5 6 5 4 3 1 2 0.5 1 0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 0 2 4 VSD - Volts 8 10 12 14 16 18 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1,000 10 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads 6 Coss 10 1 0.1 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_1R4N100P (2A)4-03-08-A