IXYS IXTA3N100P

Polar VHVTM
Power MOSFET
IXTA3N100P
IXTH3N100P
IXTP3N100P
VDSS
ID25
= 1000V
=
3A
≤
Ω
4.8Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
G
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
3
6
A
A
IA
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
3
20
200
A
mJ
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
125
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062) from case for 10s
Plastic body for 10s
Md
Mounting torque
Weight
TO-263
TO-220
TO-247
(TO-220)
(TAB)
TO-220 (IXTP)
G
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
1000
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
G
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
±50 nA
D = Drain
TAB = Drain
Features
z
z
5 μA
250 μA
Ω
z
z
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
Applications:
z
z
z
z
z
© 2007 IXYS CORPORATION, All rights reserved
(TAB)
S
Advantages
V
4.8
D
G = Gate
S = Source
z
TJ = 125°C
(TAB)
D S
TO-247 (IXTH)
z
4.5
S
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
DS99767(08/07)
IXTA3N100P IXTP3N100P
IXTH3N100P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
1.5
TO-220 (IXTP) Outline
2.4
S
1220
70
14.5
pF
pF
pF
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 18Ω (External)
22
27
75
29
ns
ns
ns
ns
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
39
6
20
nC
nC
nC
(TO-220)
(TO-247)
0.50
0.21
Source-Drain Diode
Pins:
1 - Gate
2 - Drain
1.0 °C/W
°C/W
°C/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0V
3
A
ISM
Repetitive
9
A
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 3A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
1.5 V
820
TO-247 (IXTH) Outline
ns
1
2
3
∅P
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-263 (IXTA) Outline
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTA3N100P IXTP3N100P
IXTH3N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
3.0
5.5
VGS = 10V
7V
VGS = 10V
8V
7V
5.0
2.5
4.5
6V
ID - Amperes
ID - Amperes
4.0
2.0
1.5
1.0
3.5
3.0
6V
2.5
2.0
1.5
5V
1.0
0.5
5V
0.5
0.0
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
0
2
4
6
8
12
14
16
18
20
22
24
26
28
30
Fig. 4. RDS(on) Normalized to ID = 1.5A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.0
3.0
VGS = 10V
7V
2.8
VGS = 10V
2.6
RDS(on) - Normalized
2.5
ID - Amperes
10
VDS - Volts
VDS - Volts
6V
2.0
1.5
5V
1.0
2.4
2.2
2.0
1.8
I D = 3A
1.6
I D = 1.5A
1.4
1.2
1.0
0.5
0.8
0.6
0.0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-50
28
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 1.5A Value
vs. Drain Current
50
75
100
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
3.2
2.6
VGS = 10V
2.4
2.8
TJ = 125ºC
2.2
2.4
2.0
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
2.0
1.6
1.2
1.4
0.8
1.2
TJ = 25ºC
0.4
1.0
0.8
0.0
0
0.5
1
1.5
2
2.5
3
3.5
ID - Amperes
© 2007 IXYS CORPORATION, All rights reserved
4
4.5
5
5.5
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXTA3N100P IXTP3N100P
IXTH3N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
4.0
4.5
3.5
4.0
TJ = - 40ºC
3.5
2.5
g f s - Siemens
ID - Amperes
3.0
TJ = 125ºC
25ºC
-40ºC
2.0
1.5
25ºC
3.0
2.5
2.0
125ºC
1.5
1.0
1.0
0.5
0.5
0.0
0.0
3
3.5
4
4.5
5
5.5
6
0
6.5
0.5
1
VGS - Volts
1.5
2
2.5
3
3.5
4
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
VDS = 500V
9
8
I D = 1.5A
8
7
I G = 1mA
6
VGS - Volts
IS - Amperes
7
5
TJ = 125ºC
4
3
6
5
4
3
TJ = 25ºC
2
2
1
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
0
5
VSD - Volts
10
15
20
25
30
35
40
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10,000
10.00
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
100
1.00
0.10
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_3N100P(3C)10-31-06