IXYN82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 46A 3.2V 93ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Ec Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient IC25 IC110 IF110 ICM TC TC TC TC IA EAS TC = 25°C TC = 25°C SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load PC TC = 25°C = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque V V ±20 ±30 V V Ec C 105 46 42 320 A A A A 41 800 A mJ ICM = 164 @VCE ≤ VCES A 500 W -55 ... +150 150 -55 ... +150 °C °C °C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 1200 1200 G t = 1min t = 1s Weight G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z z z z z Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.0 50 μA 3 mA TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 82A, VGE = 15V, Note 1 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved V 2.75 3.50 nA 3.20 V V High Power Density Low Gate Drive Requirement Applications z z z z z ±100 Optimized for Low Switching Losses Square RBSOA Isolation Voltage 2500V~ Anti-Parallel Ultra Fast Diode Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100352D(03/13) IXYN82N120C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 75A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 2 Inductive load, TJ = 125°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 2 RthJC RthCS SOT-227B miniBLOC (IXYN) 50 S 4060 285 110 pF pF pF 215 26 84 nC nC nC 29 78 4.95 192 93 2.78 ns ns mJ ns ns mJ 280 5.00 29 90 7.45 200 95 3.70 ns ns mJ ns ns mJ 0.05 0.25 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IRM trr IF = 60A, VGE = 0V, Note 1 IF = 60A, VGE = 0V, -diF/dt = 700A/μs, VR = 600V Characteristic Values Min. Typ. Max. 2.7 TJ = 125°C TJ = 125°C 1.9 V V 41 A 420 ns RthJC Notes: 0.42 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN82N120C3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 160 VGE = 15V 13V 11V 10V 9V 140 250 80 11V 10V 9V 200 8V 100 IC - Amperes IC - Amperes 120 VGE = 15V 13V 12V 7V 60 150 8V 100 7V 6V 40 50 20 6V 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.2 160 VGE = 15V 13V 11V 10V 9V IC - Amperes 120 VGE = 15V 2.0 I 1.8 VCE(sat) - Normalized 140 8V 100 80 7V 60 40 20 1.4 I 1.2 C = 82A I C 1.0 = 41A 0.6 5V 0 0 1 2 3 4 5 0.4 -50 6 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 8.5 TJ = 25ºC 140 7.5 120 5.5 I C IC - Amperes 6.5 VCE - Volts = 164A 1.6 0.8 6V C = 164A 4.5 82A 3.5 100 80 60 TJ = 125ºC 25ºC - 40ºC 40 2.5 20 41A 1.5 0 5 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 VGE - Volts 6.0 6.5 7.0 7.5 8.0 IXYN82N120C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 60 I C = 82A I G = 10mA 12 25ºC 50 VGE - Volts g f s - Siemens VCE = 600V 14 125ºC 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 IC - Amperes 80 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 180 10,000 140 1,000 120 IC - Amperes Capacitance - PicoFarads 160 Cies Coes 100 80 60 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC 20 RG = 2Ω dv / dt < 10V / ns 0 200 40 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYN82N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eon - Eoff --- VCE = 600V 6 ---- 3.5 7 TJ = 125ºC 3.0 6 8 3 6 2 4 1.5 3 2 1.0 2 0 0.5 0 2 4 6 8 10 2.5 5 2.0 4 TJ = 25ºC = 40A C 1 12 14 16 40 18 50 60 RG - Ohms Eoff Eon 3.5 VCE = 600V ---- RG = 2Ω , VGE = 15V 9 200 8 180 7 160 2.5 5 2.0 4 I C = 40A 780 tfi td(off) - - - - 3 1.0 0.5 75 100 620 140 540 I C = 40A 120 460 100 380 80 300 2 60 1 125 40 4 6 8 240 240 230 200 120 200 80 190 TJ = 25ºC 40 180 0 80 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 18 90 td(off) - - - - RG = 2Ω , VGE = 15V 260 170 100 160 240 I C = 40A 120 220 I C = 80A 80 200 40 180 0 25 50 75 TJ - Degrees Centigrade 100 160 125 t d(off) - Nanoseconds 210 TJ = 125ºC 70 16 VCE = 600V 220 160 60 14 280 tfi t d(off) - Nanoseconds VCE = 600V 50 12 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds td(off) - - - - RG = 2Ω , VGE = 15V 40 10 RG - Ohms 280 200 = 80A 140 2 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi C 220 TJ - Degrees Centigrade 240 700 VCE = 600V I 50 1 100 t d(off) - Nanoseconds 6 I C = 80A 25 90 TJ = 125ºC, VGE = 15V Eon - MilliJoules 3.0 1.5 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t f i - Nanoseconds 4.5 4.0 70 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 8 VCE = 600V 4 I t f i - Nanoseconds 9 Eon - MilliJoules 10 Eon - MilliJoules I C = 80A Eon RG = 2Ω , VGE = 15V 4.0 12 5 10 Eoff 4.5 14 TJ = 125ºC , VGE = 15V Eoff - MilliJoules 7 Eoff - MilliJoules 5.0 16 IXYN82N120C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 td(on) - - - - 55 TJ = 125ºC, VGE = 15V VCE = 600V 120 60 tri = 80A 40 60 35 40 30 I C = 40A 20 100 40 TJ = 125ºC 80 30 TJ = 25ºC 60 20 40 10 t d(on) - Nanoseconds C 80 t d(on) - Nanoseconds I 45 50 VCE = 600V 50 100 td(on) - - - - RG = 2Ω , VGE = 15V 120 t r i - Nanoseconds 140 t r i - Nanoseconds 140 60 tri 25 0 20 20 2 4 6 8 10 12 14 16 40 18 50 60 70 80 90 0 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 36 140 tri 34 RG = 2Ω , VGE = 15V VCE = 600V 100 32 80 I C = 80A 60 30 28 40 26 I C = 40A 20 0 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds 120 td(on) - - - - 24 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_82N120C3(8M)12-13-12-A IXYN82N120C3H1 Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 21. Typ. Forward Characteristics 12 120 11 100 TVJ = 25ºC VR = 600V 120A 10 TVJ = 125ºC Q rr - [µC] 80 IF - [A] TVJ = 125ºC 60 9 60A 8 7 40 6 20 30A 5 0 0 0.5 1 1.5 2 2.5 4 600 3 700 800 VF - Volts 1000 1100 1200 1300 -diF/dt - [A/µs] Fig. 24. Typ. Recovery Time trr vs. -diF/dt Fig. 23. Typ. PeakReverse Current IRM vs. -diF/dt 90 700 TVJ = 125ºC 80 900 TVJ = 125ºC 120A VR = 600V VR = 600V 600 60 60A 50 30A Q rr - [µC] IRM - [A] 70 500 400 120A 40 60A 300 30A 30 20 600 700 800 900 1000 1100 1200 200 600 1300 700 Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt 900 1000 1100 1200 1300 Fig. 26. Maximum Transient Thermal Impedance 4.0 3.6 800 -diF/dt - [A/µs] -diF/dt - [A/µs] 1 TVJ = 125ºC 120A VR = 600V Z(th)JC - ºC / W Erec - [mJ] 3.2 2.8 60A 2.4 2.0 0.1 30A 1.6 1.2 0.8 600 700 800 900 1000 1100 -diF/dt - [A/µs] © 2013 IXYS CORPORATION, All Rights Reserved 1200 1300 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10