IXYS IXGH36N60B3D1

IXGH36N60B3D1
GenX3TM 600V IGBT
w/ Diode
VCES
= 600V
IC110
= 36A
VCE(sat) ≤ 1.8V
Medium-Speed Low-Vsat PT IGBT
for 5 - 40kHz Switching
TO-247
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC110
TC = 110°C
36
A
IF110
TC = 110°C
30
A
ICM
TC = 25°C, 1ms
200
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
ICM = 80
VCE ≤ VCES
A
PC
TC = 25°C
250
W
-55 ... +150
°C
z
TJM
150
°C
z
Tstg
-55 ... +150
°C
z
300
260
°C
°C
1.13/10
Nm/lb.in.
6
g
TJ
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque
Weight
G
C
E
G = Gate
E = Emitter
(TAB)
C
= Collector
TAB = Collector
Features
z
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
Advantages
z
z
High Power Density
Low Gate Drive Requirement
Applications
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 250μA, VGE= 0V
600
VGE(th)
IC = 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
TJ =125°C
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC
= 30A, VGE = 15V, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
1.5
z
z
z
V
z
5.0
V
z
300
μA
1.75
mA
±100
nA
1.8
V
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS99903B(07/09)
IXGH36N60B3D1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
28
IC
= 30A, VCE = 10V, Note 1
Cies
VCE = 25V, VGE = 0V, f = 1MHz
Coes
Cres
Qg
TO-247 Outline (IXGH)
42
S
2280
pF
120
pF
32
pF
80
nC
12
nC
Qgc
36
nC
td(on)
19
ns
tri
24
ns
0.54
mJ
Qge
IC
= 30A, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°°C
Eon
IC = 30A, VGE = 15V
td(off)
VCE = 400V, RG = 5Ω
125
200
ns
100
160
ns
Eoff
0.8
1.5
mJ
td(on)
19
tfi
tri
Inductive Load, TJ = 125°°C
Eon
IC = 30A, VGE = 15V
td(off)
VCE = 400V, RG = 5Ω
tfi
Eoff
ns
26
ns
0.9
mJ
180
ns
170
ns
1.5
mJ
0.50 °C/W
RthJC
RthCS
∅P
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
°C/W
0.21
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IRM
IF
= 30A, VGE = 0V, Note 1
Characteristic Values
Min.
Typ.
Max.
2.8
1.7
TJ = 150°C
IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ= 100°C
V
V
6
A
25
ns
100
ns
VR = 100V
trr
IF
= 1A, -diF/dt =100A/μs, VR = 30V
TJ= 100°C
0.9 °C/W
RthJC
Note
1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH36N60B3D1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
60
VGE = 15V
13V
11V
9V
55
50
240
210
40
35
IC - Amperes
IC - Amperes
45
VGE = 15V
13V
11V
270
7V
30
25
20
9V
180
150
120
7V
90
15
10
60
5V
5
30
0
0
0.0
0.4
0.8
1.2
1.6
2.0
5V
2.4
0
2
4
Fig. 3. Output Characteristics
@ 125ºC
10
12
14
1.35
VGE = 15V
13V
11V
9V
50
45
1.25
40
35
7V
30
25
20
15
10
1.20
1.05
C
= 30A
I
C
= 15A
0.95
0.80
1.6
I
1.00
0.85
1.2
= 60A
1.10
0
0.8
C
1.15
5
0.4
I
0.90
5V
0.0
VGE = 15V
1.30
VCE(sat) - Normalized
55
IC - Amperes
8
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
60
2.0
-50
2.4
-25
0
VCE - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
240
3.8
3.6
3.4
200
3.2
180
I
2.6
2.4
C
IC - Amperes
2.8
TJ = - 40ºC
25ºC
125ºC
220
TJ = 25ºC
3.0
VCE - Volts
6
VCE - Volts
VCE - Volts
= 60A
30A
15A
2.2
160
140
120
100
80
2.0
60
1.8
1.6
40
1.4
20
1.2
0
5
6
7
8
9
10
11
12
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
13
14
15
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
7.0
7.5
8.0
8.5
9.0
IXGH36N60B3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
90
TJ = - 40ºC
80
70
125ºC
50
I C = 30A
I G = 10mA
12
25ºC
60
VGE - Volts
g f s - Siemens
VCE = 300V
14
40
30
10
8
6
4
20
2
10
0
0
0
30
60
90
120
150
180
210
0
240
10
20
30
50
60
70
80
90
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
10,000
90
f = 1 MHz
80
70
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
40
QG - NanoCoulombs
IC - Amperes
Coes
60
50
40
30
100
Cres
5
10
15
20
25
30
35
TJ = 125ºC
10
RG = 5Ω
dV / dt < 10V / ns
0
100
10
0
20
40
150
200
250
VCE - Volts
300
350
400
450
500
550
600
650
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_36N60B3(55) 5-05-08-C
IXGH36N60B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
4.5
4.0
C
I C = 30A
1.6
VCE = 400V
2.8
1.4
2.4
1.2
2.0
1.0
1.6
0.8
TJ = 25ºC
1.2
1.2
0.6
1.0
0.8
0.8
0.4
0.5
0.4
0.4
0.2
0.0
100 110 120
0.0
I C = 15A
0
10
20
30
40
50
60
70
80
90
0.0
15
20
25
30
RG - Ohms
35
40
45
50
55
60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
2.0
320
1100
tf
td(off) - - - -
3.6
1.8
300
3.2
1.6
280
1.4
260
800
240
700
----
2.0
RG = 5Ω , VGE = 15V
1.6
VCE = 400V
1.0
I C = 30A
0.8
65
75
85
95
105
115
160
300
0.2
140
200
0.0
125
120
0
10
20
30
40
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
220
td(off) - - - -
200
RG = 5Ω , VGE = 15V
210
190
VCE = 400V
200
220
170
150
160
140
150
TJ = 25ºC
140
120
130
110
120
100
110
90
100
35
40
45
100
100 110 120
50
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
55
60
td(off) - - - -
190
RG = 5Ω , VGE = 15V
210
t f - Nanoseconds
180
160
30
90
180
VCE = 400V
195
170
180
160
165
I
C
150
= 30A, 60A
150
140
135
130
120
120
105
I
C
110
= 15A
90
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
100
125
t d(off) - Nanoseconds
190
TJ = 125ºC
25
80
200
tf
225
t d(off) - Nanoseconds
180
20
70
240
230
tf
15
60
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
210
130
50
RG - Ohms
TJ - Degrees Centigrade
170
600
0.4
I C = 15A
55
= 15A, 30A, 60V
400
0.4
45
C
500
0.8
35
I
180
0.6
25
220
200
1.2
0.0
t f - Nanoseconds
Eon
- MilliJoules
Eoff
1.2
on
2.4
900
VCE = 400V
= 60A
E
2.8
C
1000
TJ = 125ºC, VGE = 15V
t d(off) - Nanoseconds
I
Eoff - MilliJoules
TJ = 125ºC
1.5
0.0
t f - Nanoseconds
1.8
RG = 5Ω , VGE = 15V
- MilliJoules
1.6
----
on
2.0
VCE = 400V
Eon
E
TJ = 125ºC , VGE = 15V
2.4
---
- MilliJoules
2.5
Eon -
on
Eoff
2.0
Eoff
3.2
2.8
= 60A
3.0
2.0
3.2
3.6
Eoff - MilliJoules
I
4.0
E
Eoff - MilliJoules
3.5
3.6
IXGH36N60B3D1
Fig. 19. Inductive Turn-on Switching Times
vs. Collector Current
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
tr
135
td(on) - - - -
TJ = 125ºC, VGE = 15V
120
60
100
55
90
50
90
70
t r - Nanoseconds
80
I
75
C
= 15A, 30A, 60A
60
t d(on) - Nanoseconds
105
25
tr
td(on) - - - -
24
RG = 5Ω , VGE = 15V
23
VCE = 400V
45
22
TJ = 125ºC
40
21
35
20
60
50
45
40
30
30
20
17
15
20
15
16
0
10
100 110 120
10
0
10
20
30
40
50
60
70
80
90
30
19
TJ = 25ºC
25
15
15
RG - Ohms
18
t d(on) - Nanoseconds
VCE = 400V
110
t r - Nanoseconds
150
20
25
30
35
40
45
50
55
60
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times
vs. Junction Temperature
65
27
60
26
tr
55
t r - Nanoseconds
I C = 60A
45
25
RG = 5Ω , VGE = 15V
24
VCE = 400V
23
40
22
35
21
30
20
I C = 30A
25
19
20
18
I
15
C
= 15A
t d(on) - Nanoseconds
50
td(on) - - - -
17
10
16
5
25
35
45
55
65
75
85
95
105
115
15
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_36N60B3(55) 5-05-08-C
IXGH36N60B3D1
DIODE CURVES
60
A
1000
nC
50
IF
800
Qr
600
25
IF= 60A
IF= 30A
IF= 15A
IRM
20
30
15
TVJ=100°C
400
20
10
TVJ=25°C
200
10
0
TVJ= 100°C
VR = 300V
A
IF= 60A
IF= 30A
IF= 15A
40
TVJ=150°C
30
TVJ= 100°C
VR = 300V
0
1
2
5
0
100
3 V
A/μs 1000
-diF/dt
VF
Fig. 22. Reverse recovery charge Qr
versus -diF/dt
Fig. 21. Forward current IF versus VF
2.0
90
Kf
200
400
600 A/μs
800 1000
-diF/dt
Fig. 23. Peak reverse current IRM
versus -diF/dt
1.00
TVJ= 100°C
V IF = 30A
μs
V FR
15
trr
1.5
0
20
TVJ= 100°C
VR = 300V
ns
0
tfr
0.75
VFR
tfr
80
IF= 60A
IF= 30A
IF= 15A
1.0
IRM
10
0.50
5
0.25
70
0.5
Qr
0.0
0
40
80
120 °C 160
60
0
200
T VJ
400
600
800
A/μs
1000
0
0
200
400
-diF/dt
Fig.
,I I
Fig.24.
20.Dynamic
Dynamicparameters
parametersQQ
r r,RM
RM
versus TVJ
Fig. 25. Recovery time trr versus
-diF/dt
0.00
600 A/μs
800 1000
diF/dt
Fig. 26. Peak forward voltage VFR
and tfr versus diF/dt
1
K/W
Constants for ZthJC calculation:
i
1
2
3
0.1
Z thJC
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
s
t
1
Fig. 27. Transient thermal resistance junction to case
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_36N60B3(55) 5-05-08-C