MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9200 9800 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 551 000 527 000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 423 000 403 000 A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 4.5 - 7 11-13 Nm Nm 750 g TC = 25°C TC = 100°C TVJ TVJM Tstg VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL < 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Weight Typical including screws Symbol Conditions IRRM VR = VRRM TVJ = TVJM VF IF = 600 A; TVJ = 25°C VT0 rt For power-loss calculations only TVJ = TVJM RthJC per diode; DC current per module per diode; DC current per module RthJK 1 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Symbol I2t IFRMS = 2x 520A IFAVM = 2x 310A VRRM = 1200-2200V Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies Advantages • Simple mounting • Improved temperature & power cycling • Reduced protection circuits Characteristics Values other values see MCC 255 30 mA 1.32 V 0.8 0.6 V mW 0.12 0.06 0.16 0.08 K/W K/W K/W K/W QS IRM IF = 400 A; -di/dt = 50 A/µs; TVJ = 125°C 700 260 µC A dS dA a Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130813g 1-4 MDD 312 Dimensions in mm (1 mm = 0.0394“) SW 13 M8 x 20 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 2.8 x 0.8 35 28.5 1 2 38 50 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130813g 2-4 MDD 312 10000 106 400 6000 IFAVM 2 It TVJ = 45°C [A] 2 [A] DC 180° sin 120° 60° 30° 500 50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C 8000 IFSM VR = 0 V [A s] 4000 TVJ = 150°C 300 200 2000 100 0 0.001 0.01 0.1 105 1 1 0 10 t [s] 0 t [ms] 600 0.06 0.1 0.2 0.3 0.4 0.6 0.8 400 Ptot 300 500 400 IRM 300 [W] [A] DC 180° sin 120° 60° 30° 200 IF = 400 A 200 100 100 0 100 200 300 400 500 0 25 IFAVM [A] 50 75 100 125 0 150 0 50 TA [°C] 100 150 200 diF /dt [A/µs] Fig. 5 Typ. peak reverse current Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode) 25 1750 TVJ = 125°C VR = 600 V RthKA K/W 1500 1250 R 0.04 0.06 0.08 0.12 0.2 0.3 0.5 L 1000 [W] 20 trr 15 [µs] 750 Circuit B2U 2 x MDD312 500 0 100 200 300 400 500 600 IdAVM [A] 0 25 50 75 100 125 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved IF = 400 A 10 5 250 0 100 125 150 TVJ = 125°C VR = 600 V RthKA K/W 500 75 Fig. 3 Maximum forward current at case temperature Fig. 2 I t versus time (1-10 ms) 600 Ptot 50 TC [°C] 2 Fig. 1 Surge overload current IFSM: Crest value, t: duration 0 25 0 0 50 100 150 200 diF /dt [A/µs] Fig. 7 Typ. recovery time trr versus -diF /dt 20130813g 3-4 MDD 312 3000 RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 2500 2000 Ptot 1500 [W] Circuit B6U 3 x MDD312 1000 500 0 0 200 400 600 800 0 25 50 75 100 125 150 TA [°C] IFAVM [A] Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature 0.20 RthJC for various conduction angles d: d RthJC (K/W) DC 0.120 180°C 0.128 120°C 0.135 60°C 0.153 30°C 0.185 0.15 ZthJC 0.10 30° 60° 120° 180° DC [K/W] 0.05 0.00 10-3 10-2 10-1 Constants for ZthJC calculation: 100 101 102 t [s] i 1 2 3 4 Rthi (K/W) 0.0058 0.031 0.072 0.0112 ti (s) 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to case (per diode) 0.25 RthJK for various conduction angles d: d RthJK (K/W) DC 0.160 180°C 0.168 120°C 0.175 60°C 0.193 30°C 0.225 0.20 ZthJK 0.15 [K/W] 0.10 Constants for ZthJK calculation: 30° 60° 120° 180° DC 0.05 0.00 10-3 10-2 10-1 100 101 t [s] 102 i 1 2 3 4 5 Rthi (K/W) ti (s) 0.0058 0.00054 0.031 0.098 0.072 0.54 0.0112 12 0.04 12 Fig. 10 Transient thermal impedance junction to heatsink (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130813g 4-4