IXYS MCD255

MCC 255
MCD 255
Thyristor Modules
Thyristor/Diode Modules
ITRMS = 2x 450 A
ITAVM = 2x 250 A
VRRM = 1200-1800 V
3
VRSM
VDSM
VRRM
VDRM
V
V
1300
1500
1700
1900
1200
1400
1600
1800
Type
MCC
MCC
MCC
MCC
255-12io1
255-14io1
255-16io1
255-18io1
Symbol
Test Conditions
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
ITSM, IFSM
TVJ = 45°C;
VR = 0
òi2dt
76
2
MCD
MCD
MCD
MCD
5
4
1
255-12io1
255-14io1
255-16io1
255-18io1
Maximum Ratings
450
250
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9000
9600
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
7800
8600
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
405 000
382 000
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
304 000
307 000
A2s
A2s
TVJ = TVJM
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 1 A,
diG/dt = 1 A/ms
repetitive, IT = 860 A
100
A/ms
3
6 7 1
5 4 2
3
1
5 4 2
MCC
MCD
Features
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
Keyed gate/cathode twin pins
●
(di/dt)cr
●
●
●
●
non repetitive, IT = ITAVM
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = ITAVM
500
A/ms
1000
V/ms
●
Applications
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
●
●
tP = 30 ms
tP = 500 ms
PGAV
VRGM
120
60
20
10
W
W
W
V
TVJ
TVJM
Tstg
-40...+130
130
-40...+125
°C
°C
°C
●
●
●
Advantages
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Weight
t = 1 min
t=1s
3000
3600
V~
V~
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-4
MCC 255
MCD 255
Symbol
Test Conditions
Characteristic Values
IRRM, IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
VT, VF
IT, IF = 600 A; TVJ = 25°C
1.36
V
VT0
rT
For power-loss calculations only (TVJ = 130°C)
0.8
0.68
V
mW
VGT
VD = 6 V;
IGT
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
150
220
V
V
mA
mA
VGD
IGD
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.25
10
V
mA
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/ms
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
150
40
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/ms
tq
TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM
QS
IRM
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms
RthJK
dS
dA
a
1: IGT, TVJ = 130
140°C
mA
V
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
3
6
2
5
1
1
4
4: PGM = 20 W
5: PGM = 60 W
IGD, TVJ = 130
140°C
tgd
RthJC
10
0.1
10-3
mA
2
ms
200
ms
760
275
mC
A
10-2
6: PGM = 120 W
10-1
100
101 A
IG
102
Fig. 1 Gate trigger characteristics
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
other values
see Fig. 8/9
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
typ.
0.140
0.07
0.18
0.09
K/W
K/W
K/W
K/W
12.7 mm
9.6 mm
50 m/s2
100
TVJ = 25°C
µs
tgd
typ.
Limit
10
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7)
CSA class 5851, guide 460-1-1
1
0.01
MCC 255
© 2000 IXYS All rights reserved
A
1
10
Fig. 2 Gate trigger delay time
MCD 255
M8x20
0.1
IG
Dimensions in mm (1 mm = 0.0394")
M8x20
2-4
MCC 255
MCD 255
106
10000
ITSM
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 130°C
A
8000
400
ITAVM A
IFAVM
I2dt
DC
180° sin
120°
60°
30°
A2 s
300
TVJ = 45°C
6000
TVJ = 130°C
105
200
4000
100
2000
0
0.001
104
0.01
s
0.1
1
0
ms
1
t
t
Fig. 4 òi2dt versus time (1-10 ms)
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Ptot
500
RthKA K/W
W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
400
300
10
0
25
50
75
100
125 °C 150
TC
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus onstate current and ambient
temperature (per thyristor or
diode)
DC
180° sin
120°
60°
30°
200
100
0
0
100
200
300
A
0
25
50
75
100
125 °C 150
ITAVM/IFAVM
TA
2000
Ptot
RthKA K/W
W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
1500
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
1000
Circuit
B6
3xMCC255 or
3xMCD255
500
0
0
200
400
600
A
IdAVM
© 2000 IXYS All rights reserved
0
25
50
75
100
125 °C 150
TA
3-4
MCC 255
MCD 255
2000
Ptot
W
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
RthKA K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
1500
1000
Circuit
W3
3xMCC255 or
3xMCD255
500
0
0
100
200
300
400
500 A 0
25
50
75
100
125
°C 150
TA
IRMS
0.25
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
K/W
ZthJC
0.20
RthJC for various conduction angles d:
d
0.15
DC
180°
120°
60°
30°
30°
60°
120°
180°
DC
0.10
RthJC (K/W)
0.139
0.148
0.156
0.176
0.214
0.05
Constants for ZthJC calculation:
0.00
10-3
i
10-2
10-1
100
101
s
102
t
1
2
3
4
Rthi (K/W)
ti (s)
0.0066
0.0358
0.0831
0.0129
0.00054
0.098
0.54
12
0.30
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
K/W
0.25
ZthJK
RthJK for various conduction angles d:
0.20
d
DC
180°
120°
60°
30°
0.15
30°
60°
120°
180°
DC
0.10
0.05
0.00
10-3
RthJK (K/W)
0.179
0.188
0.196
0.216
0.254
Constants for ZthJK calculation:
i
10-2
10-1
100
101
s
t
© 2000 IXYS All rights reserved
102
1
2
3
4
5
Rthi (K/W)
ti (s)
0.0066
0.0358
0.0831
0.0129
0.04
0.00054
0.098
0.54
12
12
4-4