MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 òi2dt 76 2 MCD MCD MCD MCD 5 4 1 255-12io1 255-14io1 255-16io1 255-18io1 Maximum Ratings 450 250 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9000 9600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 7800 8600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 405 000 382 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 304 000 307 000 A2s A2s TVJ = TVJM f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, diG/dt = 1 A/ms repetitive, IT = 860 A 100 A/ms 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins ● (di/dt)cr ● ● ● ● non repetitive, IT = ITAVM (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM 500 A/ms 1000 V/ms ● Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches ● ● tP = 30 ms tP = 500 ms PGAV VRGM 120 60 20 10 W W W V TVJ TVJM Tstg -40...+130 130 -40...+125 °C °C °C ● ● ● Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits ● VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Typical including screws Weight t = 1 min t=1s 3000 3600 V~ V~ 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 255 MCD 255 Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C 1.36 V VT0 rT For power-loss calculations only (TVJ = 130°C) 0.8 0.68 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 40 TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM QS IRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms RthJK dS dA a 1: IGT, TVJ = 130 140°C mA V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 6 2 5 1 1 4 4: PGM = 20 W 5: PGM = 60 W IGD, TVJ = 130 140°C tgd RthJC 10 0.1 10-3 mA 2 ms 200 ms 760 275 mC A 10-2 6: PGM = 120 W 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics per thyristor (diode); DC current per module per thyristor (diode); DC current per module other values see Fig. 8/9 Creeping distance on surface Creepage distance in air Maximum allowable acceleration typ. 0.140 0.07 0.18 0.09 K/W K/W K/W K/W 12.7 mm 9.6 mm 50 m/s2 100 TVJ = 25°C µs tgd typ. Limit 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 0.01 MCC 255 © 2000 IXYS All rights reserved A 1 10 Fig. 2 Gate trigger delay time MCD 255 M8x20 0.1 IG Dimensions in mm (1 mm = 0.0394") M8x20 2-4 MCC 255 MCD 255 106 10000 ITSM 50 Hz 80 % VRRM TVJ = 45°C TVJ = 130°C A 8000 400 ITAVM A IFAVM I2dt DC 180° sin 120° 60° 30° A2 s 300 TVJ = 45°C 6000 TVJ = 130°C 105 200 4000 100 2000 0 0.001 104 0.01 s 0.1 1 0 ms 1 t t Fig. 4 òi2dt versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Ptot 500 RthKA K/W W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 400 300 10 0 25 50 75 100 125 °C 150 TC Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) DC 180° sin 120° 60° 30° 200 100 0 0 100 200 300 A 0 25 50 75 100 125 °C 150 ITAVM/IFAVM TA 2000 Ptot RthKA K/W W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 1500 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 Circuit B6 3xMCC255 or 3xMCD255 500 0 0 200 400 600 A IdAVM © 2000 IXYS All rights reserved 0 25 50 75 100 125 °C 150 TA 3-4 MCC 255 MCD 255 2000 Ptot W Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 1500 1000 Circuit W3 3xMCC255 or 3xMCD255 500 0 0 100 200 300 400 500 A 0 25 50 75 100 125 °C 150 TA IRMS 0.25 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 RthJC for various conduction angles d: d 0.15 DC 180° 120° 60° 30° 30° 60° 120° 180° DC 0.10 RthJC (K/W) 0.139 0.148 0.156 0.176 0.214 0.05 Constants for ZthJC calculation: 0.00 10-3 i 10-2 10-1 100 101 s 102 t 1 2 3 4 Rthi (K/W) ti (s) 0.0066 0.0358 0.0831 0.0129 0.00054 0.098 0.54 12 0.30 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W 0.25 ZthJK RthJK for various conduction angles d: 0.20 d DC 180° 120° 60° 30° 0.15 30° 60° 120° 180° DC 0.10 0.05 0.00 10-3 RthJK (K/W) 0.179 0.188 0.196 0.216 0.254 Constants for ZthJK calculation: i 10-2 10-1 100 101 s t © 2000 IXYS All rights reserved 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0066 0.0358 0.0831 0.0129 0.04 0.00054 0.098 0.54 12 12 4-4