PSKD 250 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet = 2x 450 A = 2x 290 A = 800-1600 V 3 2 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 Type 3 1 Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine Maximum Ratings 450 A 290 A TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Weight Mounting torque (M5) Terminal connection torque (M8) Typical including screws Symbol IRRM Test Conditions TVJ = TVJM; VR = VRRM VF IF = 600 A; TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM RthJC per per per per RthJK 1 PSKD 250/08 PSKD 250/12 PSKD 250/14 PSKD 250/16 Symbol IFRMS IFAVM ∫i2dt 2 diode; DC current module diode; DC current module 11 000 11 700 9000 9600 605 560 405 380 A A A A 000 000 000 000 A 2s A2s A 2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Features Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 ● ● ● ● Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values 40 mA other values see Fig. 6/7 1.3 V 0.75 0.75 V mΩ 0.129 0.065 0.169 0.0845 K/W K/W K/W K/W QS IRM TVJ = 125°C, IF = 400 A; -di/dt = 50 A/µs 760 275 µC A dS dA a Creepage distance on surface Strike distance through air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s 2 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Threaded spacer for higher Anode/Cathode construction: Type ZY 250, material brass 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 2 ∫i2dt versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B2 2 x PSKD 250 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKD 250 0.15 Fig. 6 Transient thermal impedance junction to case (per diode) 30° DC K/W ZthJC RthJC for various conduction angles d: d 0.10 DC 180° 120° 60° 30° 0.05 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 30° DC 0.0035 0.0165 0.1091 0.0099 0.168 0.456 RthJK for various conduction angles d: 0.15 d DC 180° 120° 60° 30° 0.10 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: 0.05 i 0 0.00 10-3 ti (s) Fig. 7 Transient thermal impedance junction to heatsink (per diode) K/W ZthJK 1 2 3 Rthi (K/W) 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0035 0.0165 0.1091 0.04 0.0099 0.168 0.456 1.36 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20