MCC 312 MCD 312 ITRMS = 2x 520 A ITAVM = 2x 320 A VRRM = 1200-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VRRM VDSM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type 2 76 5 4 1 MCC MCC MCC MCC 312-12io1 312-14io1 312-16io1 312-18io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C; VR = 0 òi2dt MCD MCD MCD MCD 312-12io1 312-14io1 312-16io1 312-18io1 Maximum Ratings 520 320 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9200 10100 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 8000 8800 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 423 000 423 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 320 000 321 000 A2s A2s 100 A/ms 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins ● ● ● (di/dt)cr (dv/dt)cr TVJ = TVJM repetitive, IT = 960 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, non repetitive, IT = ITAVM diG/dt = 1 A/ms ● ● TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 500 A/ms 1000 V/ms tP = 30 ms tP = 500 ms PGAV VRGM W W W V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Typical including screws Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches ● ● 120 60 20 10 PGM ● t = 1 min t=1s ● ● ● Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● Weight 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 312 MCD 312 Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25°C 1.32 V VT0 rT For power-loss calculations only (TVJ = 140°C) 0.8 0.68 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM 200 ms QS IRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms 760 275 mC A 10 1: IGT, TVJ = 140°C RthJC RthJK dS dA a 40 mA V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 6 2 5 1 1 4 4: PGM = 20 W 5: PGM = 60 W IGD, TVJ = 140°C 0.1 10-3 10-2 6: PGM = 120 W 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics per thyristor (diode); DC current per module per thyristor (diode); DC current per module other values see Fig. 8/9 Creeping distance on surface Creepage distance in air Maximum allowable acceleration 0.12 0.06 0.16 0.08 K/W K/W K/W K/W 12.7 mm 9.6 mm 50 m/s2 100 TVJ = 25°C µs tgd typ. Limit 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 0.01 MCC © 2000 IXYS All rights reserved A 1 10 Fig. 2 Gate trigger delay time MCD M8x20 0.1 IG Dimensions in mm (1 mm = 0.0394") M8x20 2-4 MCC 312 MCD 312 106 10000 ITSM A It 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C 8000 600 A VR = 0V 2 DC 180° sin 120° 60° 30° ITAVM 500 I 2 As FAVM TVJ = 45°C 400 6000 TVJ = 140°C 105 300 4000 200 2000 100 104 0 0.001 0.01 s 0.1 1 0 1 ms t t 0.06 0.1 0.2 0.3 0.4 0.6 0.8 500 400 50 75 100 125 °C 150 Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) RthKA K/W W 25 Fig. 4a Maximum forward current at case temperature 600 Ptot 0 TC Fig. 4 I2t versus time (1-10 ms) Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration 10 300 DC 180° sin 120° 60° 30° 200 100 0 0 100 200 300 500 A 0 400 25 50 75 100 ITAVM / IFAVM 3000 Ptot W 125 °C TA 150 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature RthKA K/W 0.02 0.04 0.07 0.1 0.15 0.2 0.3 2500 2000 1500 Circuit B6 3xMCC312 or 1000 3xMCD312 500 0 0 200 400 600 800 A IdAVM © 2000 IXYS All rights reserved 0 25 50 75 100 °C 125 150 TA 3-4 MCC 312 MCD 312 3000 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature W RthKA K/W 2500 0.02 0.04 0.07 0.1 0.15 0.2 0.3 Ptot 2000 1500 Circuit W3 3xMCC312 or 3xMCD312 1000 500 0 0 200 400 600 A 0 25 50 75 100 125 °C 150 TA IRMS Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: 0.20 K/W 0.15 d ZthJC DC 180° 120° 60° 30° 0.10 30° 60° 120° 180° DC 0.05 RthJC (K/W) 0.120 0.128 0.135 0.153 0.185 Constants for ZthJC calculation: i 0.00 10-3 10-2 10-1 100 101 s 102 t 1 2 3 4 ti (s) 0.0058 0.031 0.072 0.0112 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 0.25 K/W 0.20 RthJK for various conduction angles d: ZthJK 0.15 30° 60° 120° 180° DC 0.10 0.05 10-2 10-1 100 s 101 t © 2000 IXYS All rights reserved d RthJK (K/W) DC 180° 120° 60° 30° 0.160 0.168 0.175 0.193 0.225 Constants for ZthJK calculation: i 0.00 10-3 Rthi (K/W) 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0058 0.031 0.072 0.0112 0.04 0.00054 0.098 0.54 12 12 4-4