BVDSS = 600 V RDS(on) typ = 0.96 Ω HFP7N60 ID = 7.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 600 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 7.0 A Drain Current – Continuous (TC = 100℃) 4.4 A IDM Drain Current – Pulsed 28 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 420 mJ IAR Avalanche Current (Note 1) 7.0 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 147 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 5.5 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.85 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2005 HFP7N60 Dec 2005 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A -- 0.96 1.2 Ω VGS = 0 V, ID = 250 ㎂ 600 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ VDS = 600 V, VGS = 0 V -- -- 1 ㎂ VDS = 480 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 1250 1620 ㎊ -- 120 156 ㎊ -- 17.5 22.5 ㎊ -- 20 40 ㎱ -- 55 110 ㎱ -- 90 180 ㎱ -- 60 120 ㎱ -- 30 40 nC -- 6 -- nC -- 13 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 7.0 A, RG = 25 Ω (Note 4,5) VDS = 480V, ID = 7.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 7.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 28 VSD Source-Drain Diode Forward Voltage IS = 7.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 380 -- ㎱ Qrr Reverse Recovery Charge IS = 7.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 4.1 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=15.7mH, IAS=7.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤7.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2005 HFP7N60 Electrical Characteristics TC=25 °C HFP7N60 Typical Characteristics V 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottem 5.0V Top: 101 ID, Drain Current [A] ID, Drain Current [A] 101 100 150℃ 100 25℃ ※ Note : 1. 250㎲ Pulse Test 2. TC=25℃ 10-1 ※ Note : 1. VDS=40V 2. 250㎲ Pulse Test -55℃ 10-1 10-1 100 101 2 4 VDS, Drain-Source Voltage [V] 6 8 10 VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 4 IDR, Reverse Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance 5 VGS=10V 3 VGS=20V 2 1 101 100 150℃ 25℃ ※ Note : 1. VGS=0V 2. 250㎲ Pulse Test ※ Note : TJ=25℃ 0 0 5 10 15 20 25 10-1 0.2 0.4 0.6 Capacitances [pF] 1800 Ciss 1500 1200 Coss 900 1.2 1.4 * Note ; 1. VGS = 0 V 2. f = 1 MHz 600 Crss 12 VDS = 120V VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2100 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 2400 0.8 VSD, Source-Drain Voltage [V] ID, Drain Current [A] 10 VDS = 300V VDS = 480V 8 6 4 2 300 * Note : ID = 7.0A 0 10-1 0 100 101 0 4 8 12 16 20 24 28 32 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 36 ◎ SEMIHOW REV.A0,Dec 2005 (continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Note : 1. VGS=0V 2. ID=250㎂ 0.9 0.8 HFP7N60 Typical Characteristics -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.0 -100 200 -50 0 2 10 ID, Drain Current [A] DC 10 -1 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 4 3 2 0 25 3 2 10 5 1 -2 10 10 50 75 100 125 150 TC, Case Temperature [ ℃] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 0 10 D=0.5 Zθ JC(t), Thermal Response ID, Drain Current [A] 1 ms 10 ms 10 200 6 100 µs 1 10 10 150 7 Operation in This Area is Limited by R DS(on) 10 100 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 0 50 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] 0.2 -1 10 ※ Notes : 1. Zθ JC(t) = 0.85 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 PDM 0.02 0.01 t1 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Dec 2005 HFP7N60 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Dec 2005 HFP7N60 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Dec 2005 HFP7N60 Package Dimension TO-220 (A) 9.90±0.20 0. 0± .6 20 4.50±0.20 6.50±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,Dec 2005 HFP7N60 TO-220 (B) ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,Dec 2005