KSMD10N20C / KS,MU10N20C

KSMD10N20C / KS,MU10N20C
200V N-Channel MOSFET
TO-252
TO-251
Features
•
•
•
•
•
•
7.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 40.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
Symbol
VDSS
ID
D
!
●
◀
G!
▲
●
●
!
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
KSMD10N20C / KSMU10N20C
200
7.8
- Continuous (TC = 100°C)
Units
V
A
5.0
A
31.2
A
IDM
Drain Current
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
210
mJ
IAR
Avalanche Current
(Note 1)
7.8
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
5.0
5.5
50
0.4
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
2.5
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient*
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
2014-8-1
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KSMD10N20C / KS,MU10N20C
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
200
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.28
VDS = 200 V, VGS = 0 V
--
--
10
µA
VDS = 160 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.29
0.36
Ω
--
5.6
--
S
--
395
510
pF
--
97
125
pF
--
40.5
53
pF
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.9 A
gFS
Forward Transconductance
VDS = 40 V, ID = 3.9 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 9.5 A,
RG = 25 Ω
(Note 4, 5)
VDS = 160 V, ID = 9.5 A,
VGS = 10 V
(Note 4, 5)
--
11
30
ns
--
92
190
ns
--
70
150
ns
--
72
160
ns
--
20
26
nC
--
3.1
--
nC
--
10.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.8
A
ISM
--
--
31.2
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.8 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
158
--
ns
--
0.97
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2014-8-1
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KSMD10N20C / KS,MU10N20C
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
1
10
o
150 C
ID, Drain Current [A]
1
10
0
10
o
25 C
o
-55 C
0
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
-1
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1
10
1.0
VGS = 10V
VGS = 20V
0.5
※ Note : TJ = 25℃
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0.0
0
5
10
15
20
25
10
30
0.2
0.4
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
0.6
VDS = 40V
10
Capacitances [pF]
800
VGS , Gate-Source Voltage [V]
VDS = 100V
Ciss
Coss
600
Crss
400
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
200
0
-1
10
6
4
2
※ Note : ID = 9.5A
0
0
10
1
0
10
4
8
12
16
20
24
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
2014-8-1
VDS = 160V
8
Figure 6. Gate Charge Characteristics
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KSMD10N20C / KS,MU10N20C
Typical Characteristics
(Continued)
3.0
1.2
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 3.9 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
10
Operation in This Area
is Limited by R DS(on)
8
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1
10
1 ms
10 ms
DC
0
10
※ Notes :
6
4
o
1. TC = 25 C
2
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
D = 0 .5
10
0
※ N o te s :
1 . Z θJC(t) = 2 .5 ℃ /W M a x .
2 . D u t y F a c to r , D = t 1 / t 2
3 . T JM - T C = P DM * Z θJC(t)
0 .2
0 .1
0 .0 5
10
-1
0 .0 2
0 .0 1
PDM
s in g le p u ls e
θJ C
Z (t), T h e rm a l R e s p o n s e
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
2014-8-1
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KSMD10N20C / KS,MU10N20C
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
2014-8-1
VDS (t)
VDD
DUT
10V
ID (t)
tp
5
Time
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KSMD10N20C / KS,MU10N20C
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
2014-8-1
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KSMD10N20C / KS,MU10N20C
Package Dimensions
D-PAK
MIN0.55
0.91 ±0.10
9.50 ±0.30
0.50 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(1.00)
(3.05)
(2XR0.25)
(0.10)
2.70 ±0.20
6.10 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.90)
2.30 ±0.20
(0.70)
2.30TYP
[2.30±0.20]
(0.50)
2.30 ±0.10
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
6.10 ±0.20
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
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KSMD10N20C / KS,MU10N20C
Package Dimensions
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
2014-8-1
0.50 ±0.10
16.10 ±0.30
6.10 ±0.20
0.70 ±0.20
(0.50)
9.30 ±0.30
MAX0.96
(4.34)
1.80 ±0.20
0.80 ±0.10
0.60 ±0.20
(0.50)
0.50 ±0.10
2.30TYP
[2.30±0.20]
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