KERSEMI IRF9630PBF

IRF9630, SiHF9630
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
- 200
RDS(on) (Max.) (Ω)
VGS = - 10 V
0.80
Qg (Max.) (nC)
29
Qgs (nC)
5.4
Qgd (nC)
15
Configuration
Single
S
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9630PbF
SiHF9630-E3
IRF9630
SiHF9630
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
- 6.5
- 4.0
A
- 26
0.59
W/°C
EAS
500
mJ
Currenta
IAR
- 6.4
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
74
W
dV/dt
- 5.0
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 17 mH, RG = 25 Ω, IAS = - 6.5 A (see fig. 12).
c. ISD ≤ - 6.5 A, dI/dt ≤ 120 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
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IRF9630, SiHF9630
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 200
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.24
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
-
-
- 100
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 3.9 Ab
VGS = - 10 V
VDS = - 50 V, ID = - 3.9 Ab
µA
-
-
0.80
Ω
2.8
-
-
S
-
700
-
-
200
-
-
40
-
-
-
29
-
-
5.4
-
-
15
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.5 A,
VDS = - 160 V,
see fig. 6 and 13b
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
-
12
-
tr
-
27
-
-
28
-
-
24
-
-
4.5
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
VDD = - 100 V, ID = - 6.5 A,
rG = 12 Ω, rD = 15 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
-
-
- 6.5
-
-
- 26
-
-
- 6.5
-
200
300
ns
-
1.9
2.9
µC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 6.5 A, VGS = 0 Vb
TJ = 25 °C, IF = - 6.5 A, dI/dt = 100 A/µsb
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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IRF9630, SiHF9630
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRF9630, SiHF9630
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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IRF9630, SiHF9630
RD
VDS
VGS
D.U.T.
RG
+
- VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on)
td(off) tf
tr
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IAS
L
Vary tp to obtain
required IAS
VDS
VDS
D.U.T
RG
+ V DD
VDD
IAS
- 10 V
tp
0.01 Ω
A
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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IRF9630, SiHF9630
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
IRF9630, SiHF9630
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
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