KERSEMI IRFR2607ZPBF

PD - 95953
IRFR2607ZPbF
IRFU2607ZPbF
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 22mΩ
G
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
ID = 42A
S
D-Pak
IRFR2607Z
I-Pak
IRFU2607Z
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
45
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
32
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
IDM
42
A
c
180
110
W
Linear Derating Factor
Gate-to-Source Voltage
0.72
± 20
W/°C
V
96
mJ
PD @TC = 25°C Power Dissipation
VGS
Units
d
EAS (Thermally limited) Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
EAS (Tested )
c
IAR
Avalanche Current
EAR
TJ
Repetitive Avalanche Energy
TSTG
Storage Temperature Range
h
96
See Fig.12a, 12b, 15, 16
g
Operating Junction and
-55 to + 175
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
y
j
Parameter
Junction-to-Case
RθJA
Junction-to-Ambient (PCB mount)
RθJA
Junction-to-Ambient
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j
ij
y
10 lbf in (1.1N m)
Thermal Resistance
RθJC
A
mJ
Typ.
Max.
–––
1.38
–––
40
–––
110
Units
°C/W
1
12/21/04
IRFR/U2607ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.074
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
17.6
22
mΩ
VGS = 10V, ID = 30A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 50µA
gfs
Forward Transconductance
36
–––
–––
S
VDS = 25V, ID = 30A
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 75V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
e
VDS = 75V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
34
51
VGS = -20V
Qgs
Gate-to-Source Charge
–––
8.9
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 38V
tr
Rise Time
–––
59
–––
td(off)
Turn-Off Delay Time
–––
39
–––
tf
Fall Time
–––
28
–––
VGS = 10V
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
1440
–––
VGS = 0V
Coss
Output Capacitance
–––
190
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
110
–––
Coss
Output Capacitance
–––
720
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
130
–––
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
230
–––
VGS = 0V, VDS = 0V to 60V
ID = 30A
nC
VDS = 60V
e
ID = 30A
ns
nH
RG = 15 Ω
e
6mm (0.25in.)
from package
and center of die contact
pF
ƒ = 1.0MHz
f
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
45
ISM
(Body Diode)
Pulsed Source Current
–––
–––
180
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
trr
Reverse Recovery Time
–––
30
45
ns
TJ = 25°C, IF = 30A, VDD = 38V
Qrr
Reverse Recovery Charge
–––
28
42
nC
di/dt = 100A/µs
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
V
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFR/U2607ZPbF
1000
1000
100
BOTTOM
TOP
10
1
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
4.5V
10
≤ 60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
60
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current(Α)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 20V
≤ 60µs PULSE WIDTH
TJ = 25°C
50
40
TJ = 175°C
30
20
10
VDS = 10V
380µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10.0
0
0
10
20
30
40
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3
IRFR/U2607ZPbF
2400
20
2000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
1600
Ciss
1200
800
400
Coss
Crss
VDS = 60V
VDS= 30V
VDS= 12V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
ID= 30A
10
0
100
1000.0
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.0
TJ = 175°C
10.0
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1msec
DC
0.1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.0
10
2.4
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U2607ZPbF
50
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
LIMITED BY PACKAGE
ID , Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
ID = 30A
VGS = 10V
2.0
1.5
1.0
0.5
175
-60 -40 -20
TC , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
τJ
0.05
0.02
0.01
R1
R1
τJ
τ1
R2
R2
τ2
τ1
τC
τ
τ2
Ri (°C/W) τi (sec)
0.71826 0.000423
0.66173 0.004503
Ci= τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U2607ZPbF
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
400
15V
ID
3.5A
4.8A
BOTTOM 30A
TOP
300
200
100
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
5.0
VGS(th) Gate threshold Voltage (V)
10 V
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
ID = 1.0A
ID = 1.0mA
4.5
ID = 250µA
ID = 50µA
4.0
3.5
3.0
2.5
VCC
2.0
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
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IRFR/U2607ZPbF
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 30A
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
IRFR/U2607ZPbF
D.U.T
Driver Gate Drive
ƒ
+
‚
„
•
•
•
•
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
*

RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
Period
P.W.
+
VDD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
VDS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
8
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IRFR/U2607ZPbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 1999
IN THE AS S EMBLY LINE "A"
PART NUMBER
INT ERNATIONAL
RECT IFIER
LOGO
Note: "P" in ass embly line position
indicates "Lead-Free"
IRFU120
12
916A
34
AS S EMBLY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
INT ERNATIONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
12
AS S EMBLY
LOT CODE
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34
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = AS S EMBLY S IT E CODE
9
IRFR/U2607ZPbF
I-Pak (TO-251AA) Package Outline
I-Pak (TO-251AA) Part Marking Information
E XAMPL E : T HIS IS AN IR F U 120
WIT H AS S E MB L Y
L OT CODE 5678
AS S E MB L E D ON WW 19, 1999
IN T H E AS S E MB L Y L INE "A"
INT E R NAT IONAL
R E CT IF IE R
L OGO
PAR T NU MB E R
IR F U 120
919A
56
78
AS S E MB L Y
L OT CODE
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
DAT E CODE
YE AR 9 = 1999
WE E K 19
L INE A
OR
INT E R NAT IONAL
R E CT IF IE R
L OGO
PAR T NU MB E R
IRF U120
56
AS S E MB L Y
L OT CODE
10
78
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
PR ODU CT (OPT IONAL )
YE AR 9 = 1999
WE E K 19
A = AS S E MB L Y S IT E CODE
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IRFR/U2607ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
„ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.21mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 30A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
† This value determined from sample failure population. 100%
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
tested to this value in production.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
ˆ Rθ is measured at TJ approximately 90°C
 Repetitive rating; pulse width limited by
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11