omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • MBR20150CT 20 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop Low Leakage Current • Power Schottky Barrier Rectifier 150Volts Maximum Ratings • • • • Operating J unction Temperature : 150°C Storage Temperature: - 5 0°C to +150°C Per d iode Thermal Resistance 2.2°C/W Junction to Case Total Thermal Resistance 1.3°C/W Junction to Case MCC Catalog Number MBR 20150 CT Maximum Recurrent Peak Reverse Voltage 150 V Maximum RMS Voltage 105V TO-220AB B L M Maximum DC Blocking Voltage 150 V C D A K E PIN 1 3 F G I J N H H Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR20150CT Maximum Reverse Current At Rated DC Blocking Voltage IF(AV) IFSM 20 A 180A TC = 155 °C PIN 1 PIN 2 CASE PIN 3 8.3ms, half sine wave VF .92V VF .75V IR 25 µ A 5m A IFM = 10A TJ = 25°C I FM = 10A TJ = 125°C TJ = 25°C TJ = 125°C A B C D E F G H I J K L M N INCHES .600 .620 .393 .409 .104 .116 .244 .259 .356 .361 .137 .154 .511 .551 .094 .106 .024 .034 .019 .027 .147 .151 .173 .181 .048 .051 0.102t y p. MM 15.25 15.75 10.00 10.40 2.65 2.95 6.20 6.60 9.05 9.15 3.50 3.93 13.00 14.00 2.40 2.70 0.61 0.88 0.49 0.70 3.75 3.85 4.40 4.60 1.23 1.32 2.6t yp . www.kersemi.com MBR20150CT Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode). PF(av)(W) 10 9 8 7 6 5 4 3 2 1 0 IF(av)(A) δ = 0.05 δ = 0.1 δ = 0.2 12 δ = 0.5 Rth(j-a)=Rth(j-c) 10 δ=1 8 6 Rth(j-a)=15°C/W 4 T T 2 IF(av) (A) 0 1 2 3 4 5 6 7 δ=tp/T 8 9 δ=tp/T tp 10 11 12 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 0 0 Tamb(°C) tp 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). IM(A) Zth(j-c)/Rth(j-c) 150 1.0 125 0.8 100 0.6 Tc=50°C δ = 0.5 75 0.4 Tc=75°C 50 25 δ = 0.2 δ = 0.1 Tc=125°C IM t t(s) δ=0.5 0 1E-3 0.2 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). T Single pulse tp(s) 0.0 1E-3 δ=tp/T 1E-2 tp 1E-1 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(µA) C(pF) 1E+5 1000 F=1MHz Tj=25°C Tj=175°C 1E+4 Tj=150°C 1E+3 Tj=125°C 1E+2 100 Tj=100°C 1E+1 1E+0 1E-1 Tj=25°C VR(V) VR(V) 0 25 50 75 100 125 150 10 1 2 5 10 20 50 100 200 www.kersemi.com