KERSEMI MBR760

MBR735 THRU MBR760
0.185 (4.70)
0.415 (10.54) MAX.
0.175 (4.44)
0.370 (9.40)
0.154 (3.91)
0.360 (9.14)
0.055 (1.39)
DIA.
0.148 (3.74)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.635 (16.13)
0.330 (8.38)
0.625 (15.87)
1.148 (29.16)
PIN
1
2
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal to silicon rectifier,
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward
voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounces, 2.24 grams
0.022 (0.56)
0.014 (0.36)
PIN 1
0.205 (5.20)
0.195 (4.95)
PIN 2
CASE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum working peak reverse voltage
VRWM
35
45
50
60
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current (SEE FIG 1)
I(AV)
7.5
Amps
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
IFRM
15.0
Amps
Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method)
IFSM
150.0
Amps
Peak repetitive reverse surge current (NOTE 1)
IRRM
1.0
0.5
Amps
VF
0.57
0.84
0.72
0.75
0.65
-
Volts
0.1
15.0
0.5
50
Maximum instantaneous
forward voltage at
(NOTE 2)
IF=7.5A, TC=25°C
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
TC=125°C
(NOTE 1)
IR
Volts
mA
Voltage rate of change (rated VR)
dv/dt
10,000
V/µs
Maximum thermal resistance, (NOTE 3)
RΘJC
RΘJA
3.0
60.0
°C/W
Operating junction temperature range
TJ
-65 to +150
°C
TSTG
-65 to +175
°C
Storage temperature range
NOTES:
(1) 2.0µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
4/98
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RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR760
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
FIG. 1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
8
6
4
2
MBR735 - MBR745
MBR750 & MBR760
0
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
150
125
100
75
50
25
150
100
50
0
175
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
10
100
10
1
NUMBER OF CYCLES AT 60 HZ
CASE TEMPERATURE, °C
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
MBR735 - MBR745
MBR750 & MBR760
50
10
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
TJ=125°C
10
PULSE WIDTH = 300µs
TJ=25°C
1
MBR735 - MBR745
MBR750 & MBR760
0.1
0.01
0.1
TJ=75°C
0.01
TJ=25°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
TRANSIENT THERMAL IMPEDANCE, °C/W
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
1,000
100
MBR735 - MBR745
MBR750 & MBR760
1
10
REVERSE VOLTAGE, VOLTS
60
80
100
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
40
0.1
40
20
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
4,000
JUNCTION CAPACITANCE, pF
TJ=125°C
1
100
100
10
1
0.1
0.01
0.1
10
1
t, PULSE DURATION, sec.
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100