STK0260I Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.0Ω(Max.) Ordering Information Type NO. Marking STK0260I Package Code STK0260 I-PAK Outline Dimensions unit : mm 6.40~6.60 2.20~2.40 5.14~5.64 1.00 Typ. 5.90~6.30 1.50 Typ. 0.40~0.60 9.96 Max. 9.00~9.60 1.80 Typ. 1.32 Max. 0.60 Max. 0.86 Max. 2.30 Typ. 2.30 Typ. 1 2 3 PIN Connections 1. Gate 2. Drain 3. Source KSD-T6Q002-000 1 STK0260I Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Tc=25℃) 2.0 A (Tc=125℃) 1.2 A * IDP 8.0 A Drain Power dissipation PD 34 W Drain current (DC) ID Drain current (Pulsed) Avalanche current (Single) ② IAS 2.0 A Single pulsed avalanche energy ② EAS 42 mJ Avalanche current (Repetitive) ① IAR 2.0 A Repetitive avalanche energy ① EAR 3.7 mJ TJ Tstg 150 -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 3.67 Junction-ambient Rth(J-a) - 62.5 KSD-T6Q002-000 Unit ℃/W 2 STK0260I Electrical Characteristics Characteristic (Tc=25°C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 μA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=1.0A - 3.8 4.7 Ω Forward transfer admittance ④ gfs VDS=10V, ID=1.0A - 2.3 - S - 290 435 - 33 49 - 6.0 9.0 - 22 - - 10.5 - - 7 - - 10.5 - - 8.4 12.6 - 1.4 2.1 - 2.6 3.9 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=300V, VGS=10V ID=2.0A, RG=25Ω ③④ VDD=300V, VGS=10V ID=2.0A ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Continuous source current IS Test Condition pF ns nC (Tc=25°C) Min Typ Max - - 2.0 - - 8.0 Unit Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=2.0A - - 1.4 V Reverse recovery time trr - 230 - ns Reverse recovery charge Qrr Is=2.0A, VGS=0V dis/dt=100A/us - 0.84 - uC A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=9.5mH, IAS=2.0A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T6Q002-000 3 STK0260I Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ = KSD-T6Q002-000 4 STK0260I Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㅋ C Fig. 9 C Fig. 10 Safe Operating Area ID - TC ` * KSD-T6Q002-000 5 STK0260I Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6Q002-000 6 STK0260I Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6Q002-000 7 STK0260I The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6Q002-000 8