BAS70-04LT1G, SBAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 70 VOLTS SCHOTTKY BARRIER DIODE ANODE 1 CATHODE 2 3 CATHODE/ANODE • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Reverse Voltage Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s) 3 1 2 Symbol Value Unit VR 70 V IFSM 100 mA MARKING DIAGRAM Symbol Max Unit CG M G G 225 1.8 mW mW/°C TJ, Tstg −55 to +150 °C RqJA 508 (Note 1) 311 (Note 2) °C/W THERMAL CHARACTERISTICS Characteristic Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Thermal Resistance Junction−to−Ambient SOT−23 (TO−236AB) CASE 318 PF Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. 1 CG M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAS70−04LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SBAS70−04LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 February, 2013 − Rev. 10 1 Publication Order Number: BAS70−04LT1/D BAS70−04LT1G, SBAS70−04LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 μA) V(BR)R 70 − V Total Capacitance (VR = 0 V, f = 1.0 MHz) CT − 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR − − 0.1 10 μA Forward Voltage (IF = 1.0 mA) VF − 410 mV Forward Voltage (IF = 10 mA) VF − 750 mV Forward Voltage (IF = 15 mA) VF − 1.0 V Characteristic IR , REVERSE CURRENT (μA) 100 10 1.0 150°C 125°C 0.1 0 0.1 TA = 150°C 10 125°C 1.0 85°C 0.1 0.01 -40°C 85°C 25°C 25°C -55°C 0.2 0.3 0.4 0.001 0.6 0.5 0.7 0.8 0 1.0 0.9 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 25 30 35 15 20 VR, REVERSE VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 45 50 50 BAS70−04LT1G, SBAS70−04LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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