QP12W05S-37 Hybrid Integrated IGBT Driver QP12W05S-37 is a hybrid integrated IGBT driver designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC converter. The gate driver provides an over-current protection function based on desaturation detection and fault output. l Built in high CMRR opto-coupler (CMR: Typical: 30kV/µs, Min.:15kV/µs) l Single supply drive topology in RoHS Absolute Maximum Ratings Features l Built multi-country patent protection the isolated type DC/DC converter for gate drive l SIP package Item and output is 3750VRMS (for 1 minute) l Built in short circuit protection circuit with a pin for fault output l Soft turn-off time is adjustable l The drive signal is ignored in the blocking time and the protection circuit Ratings Units 16 V -1 ~ +7 V When the Output voltage “H” VCC V Pulse width 2µs Frequency f=20kHz +5 A -5 A VD DC Input Voltage VI Between pin3 and pin4 Out Voltage VO I g on Output Current I g off l CMOS&TTL compatible l Electrical isolation voltage between input Test Conditions Supply Voltage Isolation Voltage Vis 3750 V Operation Temperature To -40 ~ +70 ºC Storage Temperature Tst -50 ~ +125 ºC Fault Output Current IF 20 mA Input Voltage VR 50 V Sine wave voltage 50Hz/60 Hz,1 min. Applied pin13 Notes: 1. Ta=25ºC; VD=15V, unless otherwise specified. reset at the end of it l Controlled time detect short circuit is Electrical Characteristic adjustable l Switching frequency up to 20kHz Characteristics Supply Voltage Application l General-purpose Inverter l AC Servo Systems l Uninterruptable Power Supplies(UPS) 600V Series IGBT(up to 600A) l 1200V Series IGBT(up to 400A) l 1700V Series IGBT(up to 200A) MORNSUN Science & Technology co.,Ltd. Address: 2th floor 6th building, Huangzhou Industrial District, Guangzhou, China Tel: 86-20-38601850 Fax:86-20-38601272 Http://www.mornsun-power.com Typ. Max VD Recommended Range 14.5 15 15.5 V Recommended Range 4.75 5 5.25 V “H” input current I IH Recommended Range — 16 Switching frequency ƒ Recommended Range Gate resistant Rg Recommended Range VC Gate supply voltage C VE Ω 14.5 — 18.0 V — -7 — -10 V 15.3 17.0 V -6 — -10 V — 0.5 1 µs 0.3 1 µs E VOH 15KΩconnected between pin9-11 13.5 “L” output voltage VOL tr mA kHz 2 “H” output voltage “L-H” rise time — 20 — 15KΩconnected between pin9-11 “L-H” propagation delay time tPLH IIH=10mA l Units Min Pull-up voltage on input side VIN l Welding Machines Recommended modules Limit Test Conditions IIH=10mA “H-L” propagation delay time tPHL IIH=10mA 1 1.3 µs “H-L” fall time IIH=10mA 0.3 1 µs tf Protection threshold voltage VOCP VD=15V 9.5 Protection reset time t timer Between start and cancel Fault output current IFO Pin15 input current, R=4.7K Short-circuit detection time delay Ttrip1 Pin 13: ≥15V, Pin 16:open Soft turn-off time Tcf PIN 13≥15V, Pin 16:open SC detect voltage VSC Collector voltage of module 1 15 1.4 V 2 ms 5 mA 1.6 µs 4.5 µs V Notes: 1. Ta=25 ºC, VD=15V, Rg=5Ω. unless otherwise specified 2.”H” represents high level; “L” represents low level. The copyright and authority for the interpretation of the products are reserved by Mornsun Specifications subject to change without notice. QP12W 05S-37 A/1-2009 Page 1 of 3 Definition of Characteristics 1) Operation of short circuit protection 2) Switching operation VI VI 0V 90% tr Vg Vg tf 90% 0V -5V Ttrip 50% ttimer 10% tPLH tPHL Definition of Adjustment 1) Adjustment of soft turn-off time: 2) Adjustment of short-circuit detection time delay (Operation of short circuit protection) (Operation of short circuit protection) When a desaturation is detected the hybrid gate driver performs The short-circuit detection time delay is defined between the time a soft shutdown of the IGBT. The Soft turn-off time is 4.5uS. You can in which a desaturation is detected and the time in which the gate connect an Rf or Cf to adjust the Soft turn-off time. (Connecting Rf will voltage fall down to 90% of extent. This diver have a minimum increase the soft turn-off time and connecting Cf will decrease the soft short-circuit detection time delay, and you can adjust the short-circuit turn-off time.) The soft turn-off time must be set 2.5uS< Tcf <10uS. detection time delay by connecting the capacitor (Ctrip) between Please refer to the below table. PIN12 and 16. But the short-circuit detection time delay must be set less than 3.5uS. Please refer to below table.(the data only for refer) VI 0V VI 0V 90% 90% Vg 0V Vg 0V -5V Tcf ttrip The short-circuit detection time delay & capacitor Ctrip The soft turn-off time & Rf ,Cf Rf (Ω) Tcf (μS) Cf (nF) Ttrip(μS) 1.6 ― 4.5 － 4.5 1500 4.0 1 4.9 0.33 1.8 500 3.5 3.3 5.3 1.0 2.2 300 3.0 10 6.5 2.2 2.4 9.3 3.3 2.6 2.5 22 The reference curve of soft turn-off time & Rf The reference curve of Controlled time detect short circuit & Ctrip The reference curve of soft turn-off time & Cf 5.0 20 5.0 VD=15V Ta=25℃ 4.5 VD=15V Ta=25℃ 18 4.0 3.0 2.5 2.0 1.5 1.0 soft turn-off tmie:T trip (uS) Tcf 3.5 14 12 Tc f 10 8 6 4 2 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Resistor Rf (KΩ) (PIN:14-15) VD=15V Ta=25℃ 4.5 16 4.0 Soft turn-off time:Tcf (uS) Soft turn-off time:Tcf (uS) Ctrip (nF) － 110 0 Tcf(μS) 3.5 3.0 Ttrip 2.5 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 35 40 45 50 Capactiance Cf (pF) (PIN:10-14) The copyright and authority for the interpretation of the products are reserved by Mornsun 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 capactance Ctrip (nF) (PIN10-16) Specifications subject to change without notice. QP12W 05S-37 A/1-2009 Page 2 of 3 Outline Dimensions (Unit:mm) PIN FUNCTION: Pin 52MAX 1 4 8 16 0.5± 0.1 15x2.54 3.0MIN 25.0MAX 15MAX 0.25± 0.05 2.54 38.1 Note: Unit: mm General tolerances: ±0.3mm Description 1 Power supply(+) 2 Power supply(-) 3 Drive signal input(+) 4 Drive signal input(-) 8 DC/DC converter output(+) 9 DC/DC converter output(COM) 10 DC/DC converter output(-) 11 Drive output 12 Collector 13 Detect of short circuit 14 Adjustment of Soft turn-off time 15 Fault signal output 16 Adjustment of short-circuit detection time delay Application Examples D1 13 1 + VD - VD=15V Rg 11 C1 VI=5V±5% C1:100uF (Low impedance) 12 2 DZ2 8 DZ1 DZ3 C2 9 QP12W05S-37 Cf: Depend on need Rf: Depend on need Ctrip 3 Rg:5Ω (Adjustable) 16 cf 4.7kΩ 14 4 C3:100uF (Low impedance) Ctrip: Depend on need. C3 10 VI C2:100uF (Low impedance) DZ1:30V DZ2, DZ3:18V Rf D1: Fast recovery diode (trr≤0.2μs) 15 Application Notes 1. The isolated DC/DC converter is only for the gate drive; 2. The IGBT gate-emitter drive loop wiring must be shorter than 1 meter; 3. The IGBT gate-emitter drive loop wiring should be twisted; 4. If large voltage spike is generated at the collector of the IGBT, the IGBT gate resistor should be increased; 5. The external capacitors or resistors should be set as close as possible to the Hybrid IC; 6. The voltage compensate capacitors should be low impedance and be located as close as possible to the Hybrid IC; 7. The peak reverse voltage of the diode D1(to connect PIN13) must be higher than the peak value of the IGBT collector voltage; 8. When recovery current flow in D1, PIN13 is applied high voltage. In the case, counterplan for protection which insert a zener diode between PIN10 and 13 are necessary like above diagram(DZ1); 9. When the built in short-circuit protection circuit need not be used, please connect resistance of 4.7kΩ between PIN9 and 13(D1and DZ1are not required). The copyright and authority for the interpretation of the products are reserved by Mornsun Specifications subject to change without notice. QP12W 05S-37 A/1-2009 Page 3 of 3