DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2766GR/GS WIDE BAND IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER DESCRIPTION The µPC2766GR/GS is a Silicon monolithic IC designed for use as IQ demodulator in wide dynamic range compressed video or spread spectrum receivers. This IC consists of a wide band RF amplifier, gain control amplifier, dual balanced mixers (DBM), Lo buffers, and I & Q output buffer amplifiers. The package is 20 pin SSOP (shrink small outline package: µPC2766GR) or 20 pin SOP (µPC2766GS) suitable for high-density surface mount. FEATURES • Broadband operation RF & LO up to 1 000 MHz IF (IQ) up to 200 MHz • Wideband IQ phase and amplitude balance • AGC dynamic range 45 dB • Low distortion; IM3 30 dBc • Supply Voltage 5V Amplitude balance ±0.3 dB (TYP.) Phase balance ±0.3 degree (TYP.) • Packaged in 20 pin SSOP or 20 pin SOP suitable for high-density surface mount ORDERING INFORMATION PART NUMBER PACKAGE PACKAGE STYLE µPC2766GR-E1 20 pin plastic SSOP (225 mil) Embossed tape 12 mm wide. 2.5 k/REEL Pin 1 indicates pull-out direction of tape µPC2766GS-E1 20 pin plastic SOP (300 mil) Embossed tape 24 mm wide. 2.5 k/REEL Pin 1 indicates pull-out direction of tape Caution electro-static sensitive device The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10193EJ4V0DS00 (4th edition) Date Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1995, 1999 µPC2766GR/GS INTERNAL BLOCK DIAGRAM I out 20 I out GND IF. I Lo I Lo I 19 17 16 18 Lo Q Lo Q GND Q out Q out IF. Q 15 I-IF Amp. I-Lo.Buff.Amp 14 13 12 11 I-IF Amp. I-Lo.Buff.Amp I-MIX. Q-MIX. RF AGC RF Pre.Amp 2 1 2 3 I trim Vcc IF. I Vcc RF 4 5 AGC cont. 6 7 8 9 10 GND RF in RF in GND Vagc Vcc Q trim RF RF IF. Q Data Sheet P10193EJ4V0DS00 µPC2766GR/GS PIN FUNCTIONS PIN No. PIN NAME 1 I Trim PIN VOLTAGE TYP. (V) 4.2 FUNCTION AND EXPLANATION EQUIVALENT CIRCUIT Trimming pin for I-IF output. VCC 1 2 VCCIF I 5.0 Power supply pin for I-MIXER. 3 VCCRF 5.0 Power supply pin for RF and AGC block. 4 GND RF 0.0 Ground pin of RF and AGC block. 5 RFin 2.6 RF input pin. In case of single input, 6 pin should be grounded through capacitor. To next block 6 5 6 RFin 2.6 7 GND RF 0.0 Ground pin of RF and AGC block. 8 VAGC 0 to 5 Gain control pin. • VAGC = 0 V: Full gain • VAGC = 5 V: Maximum reduction VCC 8 9 VCCIF Q 5.0 Power supply pin for Q-MIXER. 10 Q Trim 4.2 Trimming pin for Q-IF output. VCC 10 Data Sheet P10193EJ4V0DS00 3 µPC2766GR/GS PIN No. PIN NAME 11 Qout PIN VOLTAGE TYP. (V) 3.3 FUNCTION AND EXPLANATION EQUIVALENT CIRCUIT Q-IF output pin. 11 pin and 12 pin are balance outputs. VCC 12 + 12 Qout 3.3 13 GNDIF Q 0.0 Ground pin of Q-IF block. 14 Lo Q 2.2 Oscillator signal input pin of Q-MIXER. In case of single input, 15 pin should be grounded through capacitor. 15 Lo Q 2.2 16 Lo I 2.2 17 Lo I 2.2 18 GNDIF I 0.0 Ground pin of I-IF block. 19 Iout 3.3 I-IF output pin. 19 pin and 20 pin are balance outputs. VCC 14 Oscillator signal input pin of I-MIXER. In case of single input, 16 pin should be grounded through capacitor. 4 Iout 17 Data Sheet P10193EJ4V0DS00 16 VCC + 3.3 15 VCC 19 20 11 From before _ block 20 From before _ block µPC2766GR/GS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) µPC2766GR PARAMETER SYMBOL RATING UNIT Supply voltage VCC 6.0 V Power dissipation PD 430 mW Operating temperature range TA –40 to +85 °C Storage temperature range Tstg –55 to +150 °C SYMBOL RATING UNIT Supply voltage VCC 6.0 V Power dissipation PD 650 mW Operating temperature range TA –40 to +85 °C Storage temperature range Tstg –55 to +150 °C TEST CONDITIONS TA = 85 °CNote 1 µPC2766GS PARAMETER TEST CONDITIONS TA = 85 °CNote 1 Note 1 Mounted on 50 × 50 × 1.6 mm double epoxy glass board. RECOMMENDED OPERATING RANGE µPC2766GR/GS PARAMETER SYMBOL MAX. TYP. MIN. UNIT Supply voltage VCC 4.5 5.0 5.5 V Operating temperature range TA –40 +25 +85 °C Data Sheet P10193EJ4V0DS00 5 µPC2766GR/GS ELECTRICAL CHARACTERISTICS (VCC = 5 V, TA = 25 °C,ZL = 250 Ω) µPC2766GR/GS PARAMETER SYMBOL MIN. TYP. MAX. UNIT ICC – 60 78 mA no input signal RF input bandwidth RF BW DC 750 DC 1000 – MHz fIF = 40 MHz, fRF > fLO IQ phase balance ≤ ±1.5° IF output bandwidth IF BW DC 200 – MHz fRF = 480 MHz, PLO = –10 dBm fRF > fLO, –3 dB down, Vagc = 0 V Gain control range GGC 40 45 – dB fRF = 480 MHz, fIF = 40 MHz PRF = –30 dBm, PLO = –10 dBm Vagc = 0 – 5 V IQ phase balance ∆φ – ±0.3 ±1.5 deg fRF = 480 MHz, fIF = 40 MHz Supply current TEST CONDITIONS PRF = –30 dBm, PLO = –10 dBm IQ amplitude balance ∆G – ±0.3 ±0.5 dB fRF = 480 MHz, fIF = 40 MHz PRF = –30 dBm, PLO = –10 dBm Vagc = 0 V Output voltage VO 1.2 1.5 – VP-P fRF = 480 MHz, fIF = 40 MHz PLO = –10 dBm, ZL = 250 Ω Conversion gain CG 15 20 25 dB fRF = 480 MHz, fIF = 40 MHz Vagc = 0 V STANDARD CHARACTERISTICS (REFERENCE VALUES) (VCC = 5 V, TA = 25 °C,ZL = 250 Ω) µPC2766GR/GS PARAMETER SYMBOL MIN. TYP. MAX. UNIT NF – 21 – dB fRF = 480 MHz, fIF = 40 MHz PLO = –10 dBm, Vagc = 0 V LO to RF isolation LO-RFisol – 55 – dB fLO = 440 MHz, PLO = –10 dBm Vagc = 0 V LO to IF isolation LO-IFisol – 10 – dB fLO = 440 MHz, PLO = –10 dBm Vagc = 0 V IM3 – 30 – dBc fRF1 = 480 MHz, fRF2 = 490 MHz fLO = 440 MHz, Pin = –20 dBm PLO = –10 dBm, Vagc = 1 V PO(SAT) – +2 – dBm fRF = 480 MHz, fIF = 40 MHz PRF = –10 dBm Noise figure 3rd order intermodulation distortion Saturated output level 6 Data Sheet P10193EJ4V0DS00 TEST CONDITIONS µPC2766GR/GS TYPICAL CHARACTERISTICS – on Measurement Circuit – (Note 2 Lower local) CG vs. fRF (Iout) CG vs. fRF (Qout) 35 fIF = 40 MHz PLO = _10 dBm 30 Vagc = 0 V Note 2 CG _ Conversion Gain _ dB CG _ Conversion Gain _ dB 35 TA = _40 ˚C 25 20 TA = 25 ˚C 15 TA = 85 ˚C 10 fIF = 40 MHz PLO = _10 dBm 30 Vagc = 0 V Note 2 TA = _40 ˚C 25 20 TA = 25 ˚C 15 10 5 0.1 0.5 1 fRF _ RF Frequency _ GHz 5 5 0.05 0.1 0.5 1 fRF _ RF Frequency _ GHz CG vs. fIF (Iout) TA = _40 ˚C 25 TA = 25 ˚C 20 fRF = 480 MHz PRF = _30 dBm PLO = _10 dBm Vagc = 0 V Note 2 TA = 85 ˚C 15 10 5 TA = _40 ˚C 25 TA = 25 ˚C 20 fRF = 480 MHz PRF = _30 dBm PLO = _10 dBm Vagc = 0 V Note 2 TA = 85 ˚C 15 10 5 0 0 40 60 80 100 200 fIF _ IF Frequency _ MHz _5 300 40 60 80 100 200 fIF _ IF Frequency _ MHz 5 fRF = 480 MHz fIF = 40 MHz 0 PLO = _10 dBm Vagc = 0 V _5 Note 2 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V _10 _15 _20 _25 _40 300 Pin vs. Pout (Qout) _30 _20 _10 0 Pin _ Input Power Level _ dBm Pout _ Output Power Level _ dBm Pin vs. Pout (Iout) Pout _ Output Power Level _ dBm 5 CG vs. fIF (Qout) 30 CG _ Conversion Gain _ dB CG _ Conversion Gain _ dB 30 _5 TA = 85 ˚C 5 fRF = 480 MHz fIF = 40 MHz 0 PLO = _10 dBm Vagc = 0 V _5 Note 2 VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V _10 _15 _20 _25 Data Sheet P10193EJ4V0DS00 _40 _30 _20 _10 0 Pin _ Input Power Level _ dBm 7 µPC2766GR/GS IQ PHASE BALANCE vs. fRF TA = _40 ßC _5 ] (dB) I Q I-Q Amplitude Balance [ I Q TA = 85 ˚C TA = 25 ˚C _10 _15 fIF = 40 MHz PRF = _30 dBm PLO = _10 dBm Note 2 _20 0.05 0.1 IM3 _ Third Intermodulation Distortion _ dBc Pout _ Output Power Level _ dBm 0.5 1 _ fRF RF Frequency _ GHz IM3 vs. Pin (Iout) 10 fRF1 = 480 MHz fRF2 = 490 MHz MHz 0 fLO = 440 PLO = _10 dBm Pin = _20 dBm each _10 Vagc = 1.0 V VCC = 4.5 V _20 VCC = 5.0 V VCC = 5.5 V _30 _40 _50 _60 _40 _30 _20 _10 1.5 1 TA = 25 ˚C TA = 85 ˚C TA = _40 ˚C 0.5 0 _0.5 _1 fIF = 40 MHz PRF = _30 dBm _1.5 PLO = _10 dBm _2 Note 2 0.05 0.1 0.5 1 _ fRF RF Frequency _ GHz 5 IM3 _ Third Intermodulation Distortion _ dBc Pout _ Output Power Level _ dBm )˚ 0 I-Q Phase Balance ( IQ AMPLITUDE BALANCE vs. fRF 2 0 IM3 vs. Pin (Qout) 10 fRF1 = 480 MHz fRF2 = 490 MHz f 0 PLOLO==440 _10MHz dBm Pin = _20 dBm each _10 Vagc = 1.0 V VCC = 5.5 V _30 _40 _50 _60 _40 _30 fRF = 480 MHz fIF = 40 MHz PRF = _30 dBm PLO = _10 dBm VCC = 5.0 V Note 2 8 CG _ Conversion Gain _dB CG _ Conversion Gain _dB _20 1 2 4 3 Vagc _ AGC Voltage _ V 0 fRF = 480 MHz fIF = 40 MHz PRF = _30 dBm PLO = _10 dBm VCC = 5.0 V Note 2 20 _10 0 _10 CG vs. Vagc (Qout) 0 _30 _20 Pin _ Input Power Level _ (dBm) CG vs. Vagc (Iout) 10 VCC = 4.5 V VCC = 5.0 V _20 Pin _ Input Power Level _ (dBm) 20 5 5 10 0 _10 _20 _30 0 1 2 3 4 Vagc _ AGC Voltage _ V Data Sheet P10193EJ4V0DS00 5 _10 _20 _30 _40 _50 0 1 2 3 4 Vagc _ AGC Voltage _ V 5 IM3 vs. CG (Iout) 0 fRF1 = 480 MHz fRF2 = 490 MHz _10 fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm Vagc = 0 to 5 V _20 _30 _40 _50 _30 _20 _10 0 10 _ CG Conversion Gain _ dB 20 IM3 _ Third Intermodulation Distortion _ dBc IM3 vs. Vagc (Iout) fRF1 = 480 MHz fRF2 = 490 MHz fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm 0 IM3 _ Third Intermodulation Distortion _ dBc IM3 _ Third Intermodulation Distortion _ dBc IM3 _ Third Intermodulation Distortion _ dBc µPC2766GR/GS IM3 vs. Vagc (Qout) 0 fRF1 = 480 MHz fRF2 = 490 MHz fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm _10 _20 _30 _40 _50 0 1 2 3 4 Vagc _ AGC Voltage _ V 5 IM3 vs. CG (Qout) 0 fRF1 = 480 MHz fRF2 = 490 MHz _10 fLO = 440 MHz Pin = _20 dBm each PLO = _10 dBm Vagc = 0 to 5 V _20 _30 _40 _50 Data Sheet P10193EJ4V0DS00 _30 _20 _10 0 10 _ CG Conversion Gain _ dB 20 9 µPC2766GR/GS MEASUREMENT CIRCUIT (@ ZL = 250 Ω) Spectrum Analyzer 50 Ω OSC IN 50 Ω Q out I out 200 Ω 200 Ω Power Divider Note 3 Note 3 300 nH 8 pF 1 000 pF 1 000 pF 20 19 8 pF 250 Ω 300 nH 250 Ω 18 1 000 pF 1 000 pF 1 000 pF 1 000 pF 17 16 15 I-IF Amp. I-Lo.Buff.Amp 14 1 000 pF 1 000 pF 13 12 11 Q-IF Amp. Q-Lo.Buff.Amp I-MIX. Q-MIX. RF AGC RF Pre.Amp. 1 2 3 1 000 pF 1 000 pF 4 5 AGC cont. 6 8 7 1 000 pF 1 000 pF 9 1 000 pF 1 000 pF 1 000 pF 1 000 pF SG RF IN Note 3 10 10 is Low pass filter in order to eliminate local leak. Data Sheet P10193EJ4V0DS00 Vagc Vcc µPC2766GR/GS APPLICATION CIRCUIT EXAMPLE OSC IN 90˚ PHASE SHIFTER 0˚ 90˚ I out I out Q out Q out LPF LPF LPF LPF 1 000 pF 1 000 pF 20 19 18 1 000 pF 1 000 pF 17 16 15 I-IF Amp. I-Lo.Buff.Amp. 1 000 pF 1 000 pF 14 13 12 11 Q-IF Amp. Q-Lo.Buff.Amp. I-MIX. Q-MIX. RF AGC RF Pre.Amp. 1 2 3 4 5 AGC cont. 6 1 000 pF 1 000 pF 7 8 9 10 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 5 kΩ RF IN Vagc I Bias Trim Vcc 5 kΩ Q Bias Trim Data Sheet P10193EJ4V0DS00 11 µPC2766GR/GS PACKAGE DIMENSIONS 20 PIN PLASTIC SSOP (225 mil) (UNIT: mm) 20 11 detail of lead end +7˚ 3˚–3˚ 1 10 6.7 ± 0.3 6.4 ± 0.2 1.8 MAX. 4.4 ± 0.1 1.5 ± 0.1 1.0 ± 0.2 0.5 ± 0.2 0.15 0.65 +0.10 0.22 –0.05 0.10 M 0.15 +0.10 –0.05 0.575 MAX. 0.1 ± 0.1 NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 12 Data Sheet P10193EJ4V0DS00 µPC2766GR/GS 20 PIN PLASTIC SOP (300 mil) (UNIT: mm) 20 11 detail of lead end 3° +7° –3° 1 10 12.7±0.3 7.7±0.3 5.6±0.2 1.55±0.1 0.78 MAX. 1.27 1.1 0.6±0.2 +0.10 0.4±0.1 0.12 M 0.10 0.20 –0.05 0.1±0.1 1.8 MAX. NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. Data Sheet P10193EJ4V0DS00 13 µPC2766GR/GS RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used or in case soldering is done under different conditions. For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). µ PC2766GR Soldering process Soldering conditions Symbol Infrared ray reflow Peak package’s surface temperature: 235 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: 3, Exposure limit Note: None IR35-00-3 VPS Peak package’s surface temperature: 215 °C or below, Reflow time: 40 seconds or below (200 °C or higher), Number of reflow process: 3, Exposure limit Note: None VP15-00-3 Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or below, Number of flow process: 1, Exposure limit Note: None WS60-00-1 Partial heating method Terminal temperature: 300 °C or below, Flow time: 3 seconds or below, Exposure limit Note: None Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Caution 14 Do not apply more than single process at once, except for “Partial heating method”. Data Sheet P10193EJ4V0DS00 µPC2766GR/GS [MEMO] Data Sheet P10193EJ4V0DS00 15 µPC2766GR/GS • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98.8