DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2721, µPC2722 GENERAL PURPOSE L-BAND DOWN CONVERTER ICs DESCRIPTION The µPC2721/2722 are Silicon monolithic ICs designed for L-band down converter. These ICs consist of double balanced mixer, local oscillator, local oscillation buffer amplifier, IF amplifier, and voltage regulator. The packages are 8 pin SOP or SSOP suitable for high-density surface mount. FEATURES • Wide band operation fRF = 0.9 to 2.0 GHz • Two products in IF output variation are prepared µPC2721: Emitter follower output type = 50 Ω constant resistive impedance µPC2722: Open collector output type = High impedance output dependent on external inductance. • Single-end push-pull IF amplifier suppresses fluctuation in output impedance. • Supply voltage: 5 V • Low current consumption (µPC2721: ICC = 38 mA typ., µPC2722: ICC = 28 mA typ.) • Packaged in 8 pin SOP or SSOP suitable for high-density mounting ORDERING INFORMATION PART NUMBER PACKAGE PACKAGE STYLE µPC2721GR-E1 µPC2722GR-E1 8 pin Plastic SOP (225 mil) Embossed tape 12 mm wide 2.5 k/REEL. Pin 1 indicates pull-out direction of tape. µPC2721GR-E2 µPC2722GR-E2 8 pin Plastic SOP (225 mil) Embossed tape 12 mm wide 2.5 k/REEL. Pin 1 indicates roll-in direction of tape. µPC2721GV-E1 µPC2722GV-E1 8 pin Plastic SSOP (175 mil) Embossed tape 8 mm wide 1 k/REEL. Pin 1 indicates pull-out direction of tape. For evaluation sample order, please contact your local NEC office. (Part number for sample order: µPC2721GR, µPC2722GR, µPC2721GV, µPC2722GV) Caution electro-static sensitive device The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11102EJ4V0DS00 (4th edition) Date Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1996, 1999 µPC2721, µPC2722 INTERNAL BLOCK DIAGRAM 8 7 6 PIN CONFIGURATION (Top View) 5 1 OSC 1 2 OSC Buffer 2 3 8 2 7 3 6 4 5 4 Data Sheet P11102EJ4V0DS00 1. OSC base (bypass) 2. OSC base (feedback) 3. OSC collector (coupling) 4. VCC 5. IF output 6. GND 7. RF input 2 (bypass) 8. RF input 1 µPC2721, µPC2722 PIN No. 1 2 SYMBOL OSC base (bypass) OSC base (feedback) PIN VOLT TYP.(V) 2.9 2.9 Function and Explanation Internal oscillator consists in balance amplifier. 2 pin and 3 pin should be externally equipped with tank resonator circuit in order to oscillate with feedback loop. 3 2 1 VCC 1 pin should be grounded through coupling capacitor to 0.5 pF. 3 OSC collector (coupling) 5.0 3 pin is defined as open collector. This pin should be coupled through resistor or chock coil in order to adjust Q and be supplied voltage. In case of abnormal oscillation, adjust its Q lower to stabilize the operation. 4 VCC 5.0 Supply voltage pin for the IC. 5 IF output µPC2721 In µPC2721, IF amplifier is designed as single-end push-pull amplifier. This pin is assigned for the emitter follower output with 50 Ω constant resistive impedance in wide band. 2.9 Equivalent circuit µPC2721 5 µPC2722 5.0 In µPC2722, IF amplifier is designed as balance amplifier. This pin is assigned for the open collector output with high impedance dependent on external inductance. 6 GND 0.0 GND pin for the IC. 7 RF input 2 (bypass) 2.4 7 pin and 8 pin are inputs for mixer designed as double balanced type. Either pin can be assigned for input and another for ground. µPC2722 5 7 8 RF input 1 8 2.4 Data Sheet P11102EJ4V0DS00 3 µPC2721, µPC2722 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT TEST CONDITION Supply Voltage VCC 6.0 V TA = 25 °C Power Dissipation PD 250 mW TA = 85 °C Operating temperature range TA −40 to +85 °C Storage temperature range Tstg −65 to +150 °C Note 1 Note 1: Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass board. RECOMMENDED OPERATING RANGE PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VCC 4.5 5.0 5.5 V Operating temperature range TA −40 +25 +85 °C Note 2 ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, TA = +25 °C PARAMETER µPC2721 SYMBOL ) µPC2722 UNIT TEST CONDITIONS MIN. TYP. MAX MIN. TYP. MAX 29 38 45.5 19 28 37 mA no input signal 0.9 GHz fIF = 50 to 600 MHz (C2721) GHz fIF = DC to 600 MHz (C2722) Circuit Current ICC Lower Input Frequency fRF1 Upper Input Frequency fRF2 2.0 Conversion Gain 1 CG1 18 21 24 15 18 21 dB fRF = 900 MHz, fIF = 402.8 MHz Conversion Gain 2 CG2 18 21 24 15 18 21 dB fRF = 2.0 GHz, fIF = 402. 8 MHz Noise Figure 1 NF1 − 9 13 − 9 13 dB fRF = 900 MHz, fIF = 402.8 MHz Noise Figure 2 NF2 − 11 15 − 9 13 dB fRF = 2.0 GHz, fIF = 402.8 MHz Maximum output power 1 PO(SAT)1 +2 +7 − +2 +6 − dBm fRF = 900 MHz, fIF = 402.8 MHz Maximum output power 2 PO(SAT)2 +2 +7 − +2 +6 − dBm fRF = 2.0 GHz, fIF = 402.8 MHz 0.9 2.0 Note 2: on test circuit Note 2 STANDARD CHARACTERISTICS (FOR REFERENCE) (VCC = 5 V, TA = 25 °C PARAMETER 4 SYMBOL REFERENCE VALUES µPC2721 µPV2722 ) UNIT TEST CONDITIONS Conversion Gain 3 CG3 22 19 dB fRF = 900 MHz, fIF = 50 MHz Conversion Gain 4 CG4 22 19 dB fRF = 2.0 MHz, fIF = 50 MHz Conversion Gain 5 CG5 21 18 dB fRF = 900 MHz, fIF = 479.5 MHz Conversion Gain 6 CG6 21 18 dB fRF = 2.0 MHz, fIF = 479.5 MHz Conversion Gain 7 CG7 19.5 17 dB fRF = 900 MHz, fIF = 600 MHz Conversion Gain 8 CG8 19.5 17 dB fRF = 2.0 MHz, fIF = 600 MHz Third Intermodulation Distortion 1 IM31 38.0 42.0 dBc fRF = 900, 938 MHz, Pin = −30 dBm Third Intermodulation Distortion 2 IM32 38.0 42.0 dBc fRF = 2.0, 2.038 GHz, Pin = −30 dBm Data Sheet P11102EJ4V0DS00 µPC2721, µPC2722 TYPICAL CHARACTERISTICS (TA = +25 °C) OUTPUT POWER vs. INPUT POWER CIRCUIT CURRENT vs. SUPPLY VOLTAGE 60 +10 No input signal 20 µPC2722 10 0 1 2 3 4 5 fRF = 2.0 GHz 0 1 72 –10 –30 5 0 µPC2721 15 µPC2722 µ PC2721 10 NF µPC2722 5 0 0.5 1.0 1.5 2.0 72 +20 2.5 3.0 fRF = 2.0 GHz 25 µPC2721 20 fRF = 900 MHz 15 10 VCC = 5 V POSC = 0 dBm 5 PRF = –30 dBm On test circuit 100 0 200 300 400 500 600 fin – Input Frequency – GHz fIF – IF Frequency – MHz IM3 AND OUTPUT POWER vs. INPUT POWER IM3 AND OUTPUT POWER vs. INPUT POWER +10 +10 0 0 Pout – Output Power – dBm 10 20 +10 0 CONVERSION GAIN vs. IF FREQUENCY CG – Conversion Gain – dB CG – Conversion Gain – dB 15 Pout – Output Power – dBm NF – Noise Figure – dB 20 CG –10 30 VCC = 5 V PRF = –30 dBm POSC = –5 dBm fIF = 402 MHz On test circuit 25 –20 Pin – Input Power – dBm CONVERSION GAIN AND NOISE FIGURE vs. INPUT FREQUENCY 25 C2 VCC = 5 V fIF = 402 MHz On test circuit –15 VCC – Supply Voltage – V 30 2 C2 –5 –20 –40 6 fRF = 900 MHz µP 30 fRF = 900 MHz +5 µP µPC2721 40 fRF = 2.0 GHz Pout – Output Power – dBm ICC – Circuit Current – mA 50 –10 –20 –30 µPC2721 fRF1 = 900 MHz fRF2 = 938 MHz fOSC = 1.3 GHz fRF1 = 2.0 GHz fRF2 = 2.038 GHz fOSC = 2.4 GHz VCC = 5 V –40 –50 –60 –40 –30 –20 –10 –10 –20 –30 µPC2722 fRF1 = 900 MHz fRF2 = 938 MHz fOSC = 1.3 GHz fRF1 = 2.0 GHz fRF2 = 2.038 GHz fOSC = 2.4 GHz VCC = 5 V –40 –50 0 Pin – Input Power – dBm Data Sheet P11102EJ4V0DS00 –60 –40 –30 –20 –10 0 Pin – Input Power – dBm 5 µPC2721, µPC2722 LOWER VCC VOLTAGE IN OSC OPERATION vs. OSC FREQUENCY OSC-TUNING VOLTAGE vs. OSC FREQUENCY V – Oscillation stop (start) Voltage – V 20 15 10 5 Fstb – Oscillation Frequency Stability – MHz 0 1.0 1.2 1.4 1.6 1.8 2.0 5 4 3 2 1 2.2 1.4 1.6 1.7 1.8 1.9 2.0 2.1 2.2 fOSC – Oscillation Frequency – GHz µPC2721 OSC FREQUENCY STABILITY vs. OSC FREQUENCY µ PC2722 OSC FREQUENCY STABILITY vs. OSC FREQUENCY +6.0 VCC = 4.5 V VCC = 5.5 V +4.0 +2.0 0 VCC = 5.5 V –2.0 VCC = 4.5 V –4.0 –6.0 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 +6.0 +4.0 VCC = 5.5 V VCC = 4.5 V +2.0 0 –2.0 VCC = 4.5 V VCC = 5.5 V –4.0 –6.0 1.4 fOSC – Oscillation Frequency – GHz 6 1.5 fOSC – Oscillation Frequency – GHz Fstb – Oscillation Frequency Stability – MHz VTU – Tuning Voltage – V VCC = 5 V fIF = 402 MHz 1.5 1.6 1.7 1.8 1.9 2.0 2.1 fOSC – Oscillation Frequency – GHz Data Sheet P11102EJ4V0DS00 2.2 µPC2721, µPC2722 TEST CIRCUIT S.G 50 Ω 100 pF 1 8 2 7 0.5 pF S.G 50 Ω 10 Ω 100 pF 20 pF µ PC2721 3 6 4 5 2 pF 100 Ω 1 000 pF 100 pF 20 pF 50 Ω Spectrum analyzer 5.0 V APPLICATION CIRCUIT FOR REFERENCE RF IN 100 pF 1 8 2 7 0.5 pF 47 kΩ L4 2 pF 1SV210 µ PC2721 2 pF Note 3 47 Ω 100 pF 5.0 V 2 pF 6 270 Ω L2 20 pF 1 000 pF 4 IF OUT 5 20 pF Note Our varactor diodes are discontinued. For varactor diode, contact other supplier. L2: φ 0.3 mm φ 2.0 mm 10T L4: φ 0.4 mm, = 4 mm The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet P11102EJ4V0DS00 7 µPC2721, µPC2722 TEST CIRCUIT S.G 50 Ω 100 pF 1 8 2 7 0.5 pF S.G 100 pF 10 Ω 50 Ω µ PC2722 3 6 4 5 20 pF 100 Ω 2 pF 1 000 pF L1 100 pF 20 pF 0.8 pF 1.5 pF L1 1.8 µH 50 Ω Spectrum analyzer 5.0 V L1: φ 0.4 mm φ 4.0 mm 3T APPLICATION CIRCUIT FOR REFERENCE RF IN 100 pF 1 8 2 7 0.5 pF 47 kΩ L4 2 pF 1SV210 µ PC2722 2 pF Note 47 Ω 3 6 4 5 270 Ω L2 100 pF 5.0 V 20 pF 2 pF 1 000 pF IF OUT 20 pF Note Our varactor diodes are discontinued. For varactor diode, contact other supplier. L1: φ 0.4 mm φ 4.0 mm 3T L2: φ 0.3 mm φ 2.0 mm 10T L4: φ 0.4 mm, = 4 mm The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 8 Data Sheet P11102EJ4V0DS00 µPC2721, µPC2722 PACKAGE DIMENSIONS 8 PIN PLASTIC SOP (225 mil) (UNIT: mm) 8 5 detail of lead end +7˚ 3˚–3˚ 4 1 5.2 ± 0.2 6.5 ± 0.3 1.57 ± 0.2 4.4 ± 0.15 1.49 0.85 MAX. 1.27 +0.08 0.42 –0.07 1.1 ± 0.2 0.6 ± 0.2 +0.08 0.17 –0.07 0.10 0.12 M 0.1 ± 0.1 NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. Data Sheet P11102EJ4V0DS00 9 µPC2721, µPC2722 8 PIN PLASTIC SSOP (175 mil) (UNIT: mm) 8 5 detail of lead end +7˚ 3˚–3˚ 4 1 3.00 MAX 4.94 ± 0.2 1.8 MAX 3.2 ± 0.1 1.5 ± 0.1 0.575 MAX. 0.65 +0.10 0.3 –0.05 0.87 ± 0.2 0.5 ± 0.2 +0.10 0.15 –0.05 0.15 0.10 M 0.1 ± 0.1 NOTE 10 Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. Data Sheet P11102EJ4V0DS00 µPC2721, µPC2722 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales officers in case other soldering process is used or in case soldering is done under different conditions. For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). µPC2721/22 Soldering process Soldering conditions Symbol Infrared ray reflow Peak package’s surface temperature: 235 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Note Number of reflow process: 3, Exposure limit : None IR35-00-3 VPS Peak package’s surface temperature: 215 °C or below, Reflow time: 40 seconds or below (200 °C or higher), Note Number of reflow process: 3, Exposure limit : None VP15-00-3 Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or below, Note Number of flow process: 1, Exposure limit : None WS60-00-1 Partial heating method Terminal temperature: 300 °C or below, Flow time: 3 seconds or below, Exposure limitNote: None Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Caution Do not apply more than single process at once, except the “Partial heating method”. Data Sheet P11102EJ4V0DS00 11 µPC2721, µPC2722 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8