NEC UPC2722GR-E1

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2721, µPC2722
GENERAL PURPOSE L-BAND DOWN CONVERTER ICs
DESCRIPTION
The µPC2721/2722 are Silicon monolithic ICs designed for L-band down converter. These ICs consist of double
balanced mixer, local oscillator, local oscillation buffer amplifier, IF amplifier, and voltage regulator.
The packages are 8 pin SOP or SSOP suitable for high-density surface mount.
FEATURES
• Wide band operation fRF = 0.9 to 2.0 GHz
• Two products in IF output variation are prepared
µPC2721: Emitter follower output type = 50 Ω constant resistive impedance
µPC2722: Open collector output type = High impedance output dependent on external inductance.
• Single-end push-pull IF amplifier suppresses fluctuation in output impedance.
• Supply voltage: 5 V
• Low current consumption (µPC2721: ICC = 38 mA typ., µPC2722: ICC = 28 mA typ.)
• Packaged in 8 pin SOP or SSOP suitable for high-density mounting
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKAGE STYLE
µPC2721GR-E1
µPC2722GR-E1
8 pin Plastic SOP (225 mil)
Embossed tape 12 mm wide 2.5 k/REEL.
Pin 1 indicates pull-out direction of tape.
µPC2721GR-E2
µPC2722GR-E2
8 pin Plastic SOP (225 mil)
Embossed tape 12 mm wide 2.5 k/REEL.
Pin 1 indicates roll-in direction of tape.
µPC2721GV-E1
µPC2722GV-E1
8 pin Plastic SSOP (175 mil)
Embossed tape 8 mm wide 1 k/REEL.
Pin 1 indicates pull-out direction of tape.
For evaluation sample order, please contact your local NEC office.
(Part number for sample order: µPC2721GR, µPC2722GR, µPC2721GV, µPC2722GV)
Caution electro-static sensitive device
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11102EJ4V0DS00 (4th edition)
Date Published October 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1996, 1999
µPC2721, µPC2722
INTERNAL BLOCK DIAGRAM
8
7
6
PIN CONFIGURATION (Top View)
5
1
OSC
1
2
OSC
Buffer
2
3
8
2
7
3
6
4
5
4
Data Sheet P11102EJ4V0DS00
1. OSC base (bypass)
2. OSC base (feedback)
3. OSC collector (coupling)
4. VCC
5. IF output
6. GND
7. RF input 2 (bypass)
8. RF input 1
µPC2721, µPC2722
PIN
No.
1
2
SYMBOL
OSC base
(bypass)
OSC base
(feedback)
PIN VOLT
TYP.(V)
2.9
2.9
Function and Explanation
Internal oscillator consists in balance
amplifier. 2 pin and 3 pin should be
externally equipped with tank resonator
circuit in order to oscillate with feedback
loop.
3
2
1
VCC
1 pin should be grounded through
coupling capacitor to 0.5 pF.
3
OSC
collector
(coupling)
5.0
3 pin is defined as open collector. This pin
should be coupled through resistor or
chock coil in order to adjust Q and be
supplied voltage. In case of abnormal
oscillation, adjust its Q lower to stabilize
the operation.
4
VCC
5.0
Supply voltage pin for the IC.
5
IF output
µPC2721
In µPC2721, IF amplifier is designed as
single-end push-pull amplifier.
This pin is assigned for the emitter follower
output with 50 Ω constant resistive
impedance in wide band.
2.9
Equivalent circuit
µPC2721
5
µPC2722
5.0
In µPC2722, IF amplifier is designed as
balance amplifier.
This pin is assigned for the open collector
output with high impedance dependent on
external inductance.
6
GND
0.0
GND pin for the IC.
7
RF input 2
(bypass)
2.4
7 pin and 8 pin are inputs for mixer
designed as double balanced type. Either
pin can be assigned for input and another
for ground.
µPC2722
5
7
8
RF input 1
8
2.4
Data Sheet P11102EJ4V0DS00
3
µPC2721, µPC2722
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
TEST CONDITION
Supply Voltage
VCC
6.0
V
TA = 25 °C
Power Dissipation
PD
250
mW
TA = 85 °C
Operating temperature range
TA
−40 to +85
°C
Storage temperature range
Tstg
−65 to +150
°C
Note 1
Note 1: Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass board.
RECOMMENDED OPERATING RANGE
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply Voltage
VCC
4.5
5.0
5.5
V
Operating temperature range
TA
−40
+25
+85
°C
Note 2
ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, TA = +25 °C
PARAMETER
µPC2721
SYMBOL
)
µPC2722
UNIT
TEST CONDITIONS
MIN.
TYP.
MAX
MIN.
TYP.
MAX
29
38
45.5
19
28
37
mA
no input signal
0.9
GHz
fIF = 50 to 600 MHz (C2721)
GHz
fIF = DC to 600 MHz (C2722)
Circuit Current
ICC
Lower Input Frequency
fRF1
Upper Input Frequency
fRF2
2.0
Conversion Gain 1
CG1
18
21
24
15
18
21
dB
fRF = 900 MHz, fIF = 402.8 MHz
Conversion Gain 2
CG2
18
21
24
15
18
21
dB
fRF = 2.0 GHz, fIF = 402. 8 MHz
Noise Figure 1
NF1
−
9
13
−
9
13
dB
fRF = 900 MHz, fIF = 402.8 MHz
Noise Figure 2
NF2
−
11
15
−
9
13
dB
fRF = 2.0 GHz, fIF = 402.8 MHz
Maximum output power 1
PO(SAT)1
+2
+7
−
+2
+6
−
dBm
fRF = 900 MHz, fIF = 402.8 MHz
Maximum output power 2
PO(SAT)2
+2
+7
−
+2
+6
−
dBm
fRF = 2.0 GHz, fIF = 402.8 MHz
0.9
2.0
Note 2: on test circuit
Note 2
STANDARD CHARACTERISTICS (FOR REFERENCE) (VCC = 5 V, TA = 25 °C
PARAMETER
4
SYMBOL
REFERENCE VALUES
µPC2721
µPV2722
)
UNIT
TEST CONDITIONS
Conversion Gain 3
CG3
22
19
dB
fRF = 900 MHz, fIF = 50 MHz
Conversion Gain 4
CG4
22
19
dB
fRF = 2.0 MHz, fIF = 50 MHz
Conversion Gain 5
CG5
21
18
dB
fRF = 900 MHz, fIF = 479.5 MHz
Conversion Gain 6
CG6
21
18
dB
fRF = 2.0 MHz, fIF = 479.5 MHz
Conversion Gain 7
CG7
19.5
17
dB
fRF = 900 MHz, fIF = 600 MHz
Conversion Gain 8
CG8
19.5
17
dB
fRF = 2.0 MHz, fIF = 600 MHz
Third Intermodulation Distortion 1
IM31
38.0
42.0
dBc
fRF = 900, 938 MHz, Pin = −30 dBm
Third Intermodulation Distortion 2
IM32
38.0
42.0
dBc
fRF = 2.0, 2.038 GHz, Pin = −30 dBm
Data Sheet P11102EJ4V0DS00
µPC2721, µPC2722
TYPICAL CHARACTERISTICS (TA = +25 °C)
OUTPUT POWER vs. INPUT POWER
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
60
+10
No input signal
20
µPC2722
10
0
1
2
3
4
5
fRF = 2.0 GHz
0
1
72
–10
–30
5
0
µPC2721
15
µPC2722
µ PC2721
10
NF
µPC2722
5
0
0.5
1.0
1.5
2.0
72
+20
2.5
3.0
fRF = 2.0 GHz
25
µPC2721
20
fRF = 900 MHz
15
10
VCC = 5 V
POSC = 0 dBm
5
PRF = –30 dBm
On test circuit
100
0
200
300
400
500
600
fin – Input Frequency – GHz
fIF – IF Frequency – MHz
IM3 AND OUTPUT POWER vs. INPUT POWER
IM3 AND OUTPUT POWER vs. INPUT POWER
+10
+10
0
0
Pout – Output Power – dBm
10
20
+10
0
CONVERSION GAIN vs. IF FREQUENCY
CG – Conversion Gain – dB
CG – Conversion Gain – dB
15
Pout – Output Power – dBm
NF – Noise Figure – dB
20
CG
–10
30
VCC = 5 V
PRF = –30 dBm
POSC = –5 dBm
fIF = 402 MHz
On test circuit
25
–20
Pin – Input Power – dBm
CONVERSION GAIN AND NOISE FIGURE vs.
INPUT FREQUENCY
25
C2
VCC = 5 V
fIF = 402 MHz
On test circuit
–15
VCC – Supply Voltage – V
30
2
C2
–5
–20
–40
6
fRF = 900 MHz
µP
30
fRF = 900 MHz
+5
µP
µPC2721
40
fRF = 2.0 GHz
Pout – Output Power – dBm
ICC – Circuit Current – mA
50
–10
–20
–30
µPC2721
fRF1 = 900 MHz
fRF2 = 938 MHz
fOSC = 1.3 GHz
fRF1 = 2.0 GHz
fRF2 = 2.038 GHz
fOSC = 2.4 GHz
VCC = 5 V
–40
–50
–60
–40
–30
–20
–10
–10
–20
–30
µPC2722
fRF1 = 900 MHz
fRF2 = 938 MHz
fOSC = 1.3 GHz
fRF1 = 2.0 GHz
fRF2 = 2.038 GHz
fOSC = 2.4 GHz
VCC = 5 V
–40
–50
0
Pin – Input Power – dBm
Data Sheet P11102EJ4V0DS00
–60
–40
–30
–20
–10
0
Pin – Input Power – dBm
5
µPC2721, µPC2722
LOWER VCC VOLTAGE IN OSC OPERATION vs.
OSC FREQUENCY
OSC-TUNING VOLTAGE vs. OSC FREQUENCY
V – Oscillation stop (start) Voltage – V
20
15
10
5
Fstb – Oscillation Frequency Stability – MHz
0
1.0
1.2
1.4
1.6
1.8
2.0
5
4
3
2
1
2.2
1.4
1.6
1.7
1.8
1.9
2.0
2.1
2.2
fOSC – Oscillation Frequency – GHz
µPC2721 OSC FREQUENCY STABILITY vs.
OSC FREQUENCY
µ PC2722 OSC FREQUENCY STABILITY vs.
OSC FREQUENCY
+6.0
VCC = 4.5 V
VCC = 5.5 V
+4.0
+2.0
0
VCC = 5.5 V
–2.0
VCC = 4.5 V
–4.0
–6.0
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
+6.0
+4.0
VCC = 5.5 V
VCC = 4.5 V
+2.0
0
–2.0
VCC = 4.5 V
VCC = 5.5 V
–4.0
–6.0
1.4
fOSC – Oscillation Frequency – GHz
6
1.5
fOSC – Oscillation Frequency – GHz
Fstb – Oscillation Frequency Stability – MHz
VTU – Tuning Voltage – V
VCC = 5 V
fIF = 402 MHz
1.5
1.6
1.7
1.8
1.9
2.0
2.1
fOSC – Oscillation Frequency – GHz
Data Sheet P11102EJ4V0DS00
2.2
µPC2721, µPC2722
TEST CIRCUIT
S.G
50 Ω
100 pF
1
8
2
7
0.5 pF
S.G
50 Ω
10 Ω
100 pF
20
pF
µ PC2721
3
6
4
5
2 pF
100 Ω
1 000 pF
100
pF
20
pF
50 Ω
Spectrum analyzer
5.0 V
APPLICATION CIRCUIT FOR REFERENCE
RF IN
100 pF
1
8
2
7
0.5 pF
47 kΩ
L4
2 pF
1SV210
µ PC2721
2 pF
Note
3
47 Ω
100
pF
5.0 V
2 pF
6
270 Ω
L2
20
pF
1 000 pF
4
IF OUT
5
20 pF
Note Our varactor diodes are
discontinued. For
varactor diode, contact
other supplier.
L2: φ 0.3 mm φ 2.0 mm 10T
L4: φ 0.4 mm, = 4 mm
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet P11102EJ4V0DS00
7
µPC2721, µPC2722
TEST CIRCUIT
S.G
50 Ω
100 pF
1
8
2
7
0.5 pF
S.G
100 pF 10 Ω
50 Ω
µ PC2722
3
6
4
5
20
pF
100 Ω
2 pF
1 000 pF
L1
100
pF
20
pF
0.8
pF
1.5
pF
L1
1.8 µH
50 Ω
Spectrum analyzer
5.0 V
L1: φ 0.4 mm
φ 4.0 mm 3T
APPLICATION CIRCUIT FOR REFERENCE
RF IN
100 pF
1
8
2
7
0.5 pF
47 kΩ
L4
2 pF
1SV210
µ PC2722
2 pF
Note
47 Ω
3
6
4
5
270 Ω
L2
100
pF
5.0 V
20
pF
2 pF
1 000 pF IF OUT
20 pF
Note Our varactor diodes are
discontinued. For
varactor diode, contact
other supplier.
L1: φ 0.4 mm φ 4.0 mm 3T
L2: φ 0.3 mm φ 2.0 mm 10T
L4: φ 0.4 mm, = 4 mm
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
8
Data Sheet P11102EJ4V0DS00
µPC2721, µPC2722
PACKAGE DIMENSIONS
8 PIN PLASTIC SOP (225 mil) (UNIT: mm)
8
5
detail of lead end
+7˚
3˚–3˚
4
1
5.2 ± 0.2
6.5 ± 0.3
1.57 ± 0.2
4.4 ± 0.15
1.49
0.85 MAX.
1.27
+0.08
0.42 –0.07
1.1 ± 0.2
0.6 ± 0.2
+0.08
0.17 –0.07
0.10
0.12 M
0.1 ± 0.1
NOTE
Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition.
Data Sheet P11102EJ4V0DS00
9
µPC2721, µPC2722
8 PIN PLASTIC SSOP (175 mil) (UNIT: mm)
8
5
detail of lead end
+7˚
3˚–3˚
4
1
3.00 MAX
4.94 ± 0.2
1.8 MAX
3.2 ± 0.1
1.5 ± 0.1
0.575 MAX.
0.65
+0.10
0.3 –0.05
0.87 ± 0.2
0.5 ± 0.2
+0.10
0.15 –0.05
0.15
0.10 M
0.1 ± 0.1
NOTE
10
Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition.
Data Sheet P11102EJ4V0DS00
µPC2721, µPC2722
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales officers in case other soldering process is used or in case soldering is done under
different conditions.
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
µPC2721/22
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 235 °C or below,
Reflow time: 30 seconds or below (210 °C or higher),
Note
Number of reflow process: 3, Exposure limit : None
IR35-00-3
VPS
Peak package’s surface temperature: 215 °C or below,
Reflow time: 40 seconds or below (200 °C or higher),
Note
Number of reflow process: 3, Exposure limit : None
VP15-00-3
Wave soldering
Solder temperature: 260 °C or below,
Flow time: 10 seconds or below,
Note
Number of flow process: 1, Exposure limit : None
WS60-00-1
Partial heating method
Terminal temperature: 300 °C or below,
Flow time: 3 seconds or below,
Exposure limitNote: None
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 °C and relative humidity at 65 % or less.
Caution Do not apply more than single process at once, except the “Partial heating method”.
Data Sheet P11102EJ4V0DS00
11
µPC2721, µPC2722
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
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support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8