DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1686G/GV GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC DESCRIPTION The µPC1686 is Silicon monolithic IC designed for VHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • VHF/CATV band operation • Single-end push-pull IF amplifier suppresses fluctuation in output impedance. • Good capability of VHF-varactor diode due to balanced amplifier oscillator • Supply voltage: 5 V • Packaged in 8-pin SOP or SSOP suitable for high-density mounting APPLICATIONS • Tuners for TV and VCR • Receivers for VHF band ORDERING INFORMATION Part Number Package Supplying Form µPC1686G-E1 8-pin plastic SOP (225 mil) Embossed tape 12 mm wide. Pin 1 indicates pull-out direction of tape. Qty 2.5 kp/reel. µPC1686GV-E1 8-pin plastic SSOP (175 mil) Embossed tape 8 mm wide. Pin 1 indicates pull-out direction of tape. Qty 1 kp/reel. Remark To order evaluation samples, please contact your local NEC office. (Part number for sample order: µPC1686G, µPC1686GV) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11100EJ4V0DS00 (4th edition) Date Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1996, 1999 µPC1686G/GV INTERNAL BLOCK DIAGRAM 8 7 6 PIN CONFIGURATION (Top View) 5 1. OSC base (bypass) IF Pre 1 8 2 7 3 6 4 5 2. OSC base (feedback) Amp. 3. OSC collector (coupling) OSC Buffer OSC MIX 2 2 3 5. IF output (open collector) 6. GND REG. 1 4. VCC 7. RF input1 (bypass) 8. RF input2 4 Data Sheet P11100EJ4V0DS00 µPC1686G/GV PIN EXPLANATION Pin No. 1 2 Symbol OSC base (bypass) OSC base (feedback) Function and Explanation Internal oscillator consists in balance amplifier. 2 pin and 3 pin should be externally equiped with tank resonater circuit in order to oscillate with feedback loop. Equivalent Circuit VCC 1 pin should be grounded through approximate 10 pF coupling capacitor. 3 1 2 to OSC buffer amp. 3 pin is defined as open collector. This pin should be coupled through resistor or chock coil in order to adjust Q and be supplied voltage. In case of abnormal oscillation, adjust its Q lower to stabilize the operation. 3 OSC collector (coupling) 4 VCC Supply voltage pin for the IC. 5 IF output IF output pin. IF amplifier is designed as singleend push-pull amplifier. This pin is assigned for the emitter follower output with 50 Ω constant resistive impedance in wide band. 6 GND GND pin for the IC. 7 RF input 1 (bypass) 7 pin and 8 pin are inputs for mixer designed as double balanced type. Either pin can be assigned for input and another for ground. 8 VREF VCC from IF pre amp. 5 IF output VCC to IF amp. from OSC buffer RF input RF input 2 Data Sheet P11100EJ4V0DS00 3 µPC1686G/GV ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Rating Unit 6.0 V 250 mW Supply Voltage VCC TA = +25 °C Power Dissipation PD TA = +85 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −65 to +150 °C Note Note Mounted on 50 × 50 × 1.6-mm epoxy glass PWB, with copper patterning on both sides. RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. UNIT Supply Voltage VCC 4.5 5.0 5.5 V Operating Ambient Temperature TA −40 +25 +85 °C ELECTRICAL CHARACTERISTICS (VCC = 5 V, TA = +25 °C) Parameter Symbol Conditions Circuit Current 1 ICC1 no input signal Note Conversion Gain 1 CG1 fRF = 55 MHz, fIF = 44 MHz, PRF = −40 dBm, POSC = −5 dBm Note fRF = 200 MHz, fIF = 50 MHz, PRF = −40 dBm, POSC = −5 dBm Note fRF = 440 MHz, fIF = 50 MHz, PRF = −40 dBm, POSC = −5 dBm Note fRF = 55 MHz, fIF = 44 MHz, POSC = −5 dBm Note fRF = 200 MHz, fIF = 50 MHz POSC = −5 dBm Note fRF = 440 MHz, fIF = 50 MHz, POSC = −5 dBm Note fRF = 55 MHz, fIF = 44 MHz, PRF = 0 dBm, POSC = −5 dBm Note fRF = 200 MHz, fIF = 50 MHz, PRF = 0 dBm, POSC = −5 dBm Note fRF = 440 MHz, fIF = 50 MHz, PRF = 0 dBm, POSC = −5 dBm Note Conversion Gain 2 Conversion Gain 3 Noise Figure 1 Noise Figure 2 Noise Figure 3 Maximum Output Power 1 Maximum Output Power 2 Maximum Output Power 3 CG2 CG3 NF1 NF2 NF3 PO(sat)1 PO(sat)2 PO(sat)3 Note By test circuit 1 4 Data Sheet P11100EJ4V0DS00 MIN. TYP. MAX. Unit 25 38 48 mA 15 19 22 dB 15.5 19.5 22.5 dB 16 20 23 dB − 11 14 dB − 11 14 dB − 12 15 dB − +10 − dBm − +10 − dBm − +10 − dBm µPC1686G/GV STANDARD CHARACTERISTICS (FOR REFERENCE) (VCC = 5 V, TA = +25 °C unless otherwise specified) Parameter Symbol Conditions Reference Values Unit Oscillation Frequency Stability fstb VCC = ±10 %, fOSC = 100 to 490 MHz Note 1 ±100 kHz Oscillation Frequency Drift fdrift fOSC = 100 to 490 MHz, 30 min Note 1 100 kHz Note 1 3.0 V Oscillation Start Voltage VOSC fOSC = 100 to 490 MHz 1 % Cross-modulation Distortion 1 CM1 fRF = 55 MHz, fIF = 44 MHz Note 2, 3 94 dBµ 1 % Cross-modulation Distortion 2 CM2 fRF = 200 MHz, fIF = 50 MHz Note 2, 3 94 dBµ 1 % Cross-modulation Distortion 3 CM3 fRF = 440 MHz, fIF = 50 MHz Note 2, 3 94 dBµ Notes 1. By test circuit 2 2. By test circuit 1 3. fundes = fRF ±12 MHz, PRF = −31 dBm, POSC = −5 dBm AM: 100 kHz, 30 % Mod., S/I Ratio = 46 dBc, output 75 Ω open Data Sheet P11100EJ4V0DS00 5 µPC1686G/GV TYPICAL CHARACTERISTICS (TA = +25 °C) CIRCUIT CURRENT vs. SUPPLY VOLTAGE No Input Signal Circuit Current ICC (mA) 50 40 30 20 10 0 1 2 3 4 5 6 Supply Voltage VCC (V) NOISE FIGURE AND CONVERSION GAIN vs. INPUT FREQUENCY 16 VCC = 5 V, fIF = 50MHz, RF Input Terminal : Non Tuned PRF = –40 dBm, POSC = –5 dBm 12 10 8 6 4 25 Conversion Gain CG (dB) Noise Figure NF (dB) 14 CG 20 NF 15 10 5 0 500 Input Frequency fRF (MHz) 6 Data Sheet P11100EJ4V0DS00 1 000 1 200 µPC1686G/GV CONVERSION GAIN vs. INPUT FREQUENCY Conversion Gain CG (dB) 30 25 20 15 10 VCC = 5 V fIF = 50 MHz PRF = –40 dBm POSC = –5 dBm RF Input Terminal: Tuned 5 0 55 200 500 900 Input Frequency fRF (MHz) 1 % Cross-modulation Distortion CM (dBµ ) 1 % CROSS-MODULATION DISTORTION vs. INPUT FREQUENCY 100 90 80 VCC = 5 V fundes = fRF ±12 MHz PRF = –31 dBm fIF = 50 MHz POSC = –5 dBm AM: 100 kHz, 30 % Mod. S/I Ratio = 46 dBc Output Port: 75 Ω Open 70 60 0 500 1000 1200 Input Frequency fRF (MHz) Data Sheet P11100EJ4V0DS00 7 µPC1686G/GV OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) +30 Pout 0 IM3 VCC = 5 V fIF = 50 MHZ fRF = 440 MHZ POSC = –5 dBm –40 –40 0 +20 Input Power Pin (dBm) OSC-FREQUENCY STABILITY vs. OSC-FREQUENCY Oscillation Frequency Stability Fstb (kHZ) +300 VCC ±10 % VCC –10 % VCC –10 % 0 VCC +10 % VCC –10 % –300 0 500 Oscillation Frequency fOSC (MHz) 8 Data Sheet P11100EJ4V0DS00 1 000 1 200 µPC1686G/GV TEST CIRCUIT 1 OSC Input 47 Ω VCC 1 000 pF 150 nH 5 pF 1 000 pF 1 000 pF 4 3 2 1 5 6 7 8 IF Output RF Input 1 000 pF 1 000 pF 4 pF TEST CIRCUIT 2 47 kΩ 47 kΩ HVU202 BT 1 000 pF 100 pF 10 Ω 47 Ω 2.2 µ H HVU306A 47 kΩ 56 pF OSC 100 MH2 250 MH2 520 MH2 VCC 1 000 pF 4 3 2 1 5 6 7 8 10 pF IF Output 1 000 pF 1 000 pF φ 0.4 φ 3.2 12T φ 0.4 φ 3.2 7T φ 0.4 φ 2.8 2T RF Input 1 000 pF Data Sheet P11100EJ4V0DS00 9 µPC1686G/GV APPLICATION CIRCUIT EXAMPLE 47 kΩ 47 kΩ HVU202 BT 1 000 pF 100 pF 10 Ω 47 Ω 2.2 µ H 47 kΩ HVU306A 56 pF VCC 1 000 pF IF Output 1 000 pF 4 3 2 1 5 6 7 8 1 000 pF C1 RF200 MHZ C1 4 pF L1 φ 0.4 φ 3.2 3T L2 φ 0.4 φ 4.0 7T 10 pF 20 pF 1 000 pF RF Input L2 L1 10 RF500 MHZ 2 pF φ 0.4 φ 3.5 2T φ 0.5 φ 3.5 2T Data Sheet P11100EJ4V0DS00 µPC1686G/GV PACKAGE DIMENSIONS 8 PIN PLASTIC SOP (225 mil) (UNIT: mm) 8 5 detail of lead end +7˚ 3˚–3˚ 4 1 5.2 ± 0.2 6.5 ± 0.3 1.57 ± 0.2 4.4 ± 0.15 1.49 0.85 MAX. 1.27 +0.08 0.42 –0.07 1.1 ± 0.2 0.6 ± 0.2 +0.08 0.17 –0.07 0.10 0.12 M 0.1 ± 0.1 NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. Data Sheet P11100EJ4V0DS00 11 µPC1686G/GV 8 PIN PLASTIC SSOP (175 mil) (UNIT: mm) 8 5 detail of lead end +7˚ 3˚–3˚ 4 1 3.00 MAX 4.94 ± 0.2 1.8 MAX 3.2 ± 0.1 1.5 ± 0.1 0.575 MAX. 0.65 +0.10 0.3 –0.05 0.87 ± 0.2 0.5 ± 0.2 +0.10 0.15 –0.05 0.15 0.10 M 0.1 ± 0.1 NOTE 12 Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. Data Sheet P11100EJ4V0DS00 µPC1686G/GV NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235 °C or below Time: 30 seconds or less (at 210 °C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215 °C or below Time: 40 seconds or less (at 200 °C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260 °C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300 °C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P11100EJ4V0DS00 13 µPC1686G/GV [MEMO] 14 Data Sheet P11100EJ4V0DS00 µPC1686G/GV [MEMO] Data Sheet P11100EJ4V0DS00 15 µPC1686G/GV NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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