DATA SHEET MOS INTEGRATED CIRCUIT µ PD16314 DOT CHARACTER VFD CONTROLLER/DRIVER DESCRIPTION The µ PD16314 is a VFD controller/driver capable of displaying a dot matrix VFD. It has 80 anode outputs and 24 grid outputs. A single µ PD16314 can display up to 16C x 2L, 20C x 2L, or 24C x 2L. The µ PD16314 has character generator ROM in which 248 x 5 x 8 dot characters are stored. FEATURES • Dot matrix VFD controller/driver • Capable of driving anodes for cursor display (48 units) • 80 x 8 bits display RAM incorporated • Capable of alphanumeric and symbolic display through internal ROM (5 by 8 dots) 240 characters plus 8 user-defined characters • Display contents 16 columns by 2(1) rows + 32(16) cursors, 20 columns by 2(1) rows + 40(20) cursors, or 24 columns by 2(1) rows + 48(24) cursors. • Parallel data input/output (switchable between 4 bits and 8 bits) or serial data input/output can be selected. • On-chip oscillator • Custom ROM supported ORDERING INFORMATION Part Number Package µ PD16314GJ-001-8EU 144-PIN PLASTIC LQFP(FINE PITCH)(20x20), Standard ROM (ROM code: 001) µ PD16314GJ-002-8EU 144-PIN PLASTIC LQFP(FINE PITCH)(20x20), Standard ROM (ROM code: 002) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13231EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan The mark • shows major revised point. © 1997 Remark OSCOUT XOUT 3 TESTOUT Data Sheet S13231EJ1V0DS00 /xxx indicates active low signals. TEST OSCILATIOR ADDRESS IM TIMING COUNTER /CS GENERATOR 7 7 8 RS,STB I/O B U F F E R R,/W(/WR) E(/RD),SCK INSTRUCTION 8 7 INSTRUCTION REGISTER DISPLAY DATA 7 REGISTER 24 DRIVER 24 RAM (DDRAM) 80 x 8 bits 8 G1 to G24 8 8 DATA CURSOR BLINK CONTROL CIRCUIT 8 SI,SO DB4 to DB7 24-BIT SHIFT GRID SIGNAL DECORDER REGISTER DB0 to DB3 24 SDO SLK /CL LE 1. BLOCK DIAGRAM 2 OSCIN 4 4 7 8 CHARACTER CHARACTER GENERATOR GENERATOR RAM (CGRAM) ROM (CGROM) 8 x 5 x 8 bits 248 x 5 x 8 bits 80 A1 to A80 ANODE SIGNAL DRIVER 80 /RESET RESET CIRCUIT 80-BIT LATCH 5 5 MPU 80 DS0 DS1 PARALLEL TO SERIAL 80-BIT SHIFT DATA CONVERTER REGISTER DLS R,L1 R,L2 VDD2 VSS1 VSS2 µ PD16314 VDD1 µ PD16314 A70 A69 A68 A67 A66 A65 A64 A63 A62 A61 A60 A59 A58 A57 A56 A55 A54 A53 A52 A51 A50 A49 A48 A47 A46 A45 A44 A43 A42 A41 A40 A39 A38 A37 A36 A35 2. PIN CONFIGURATION (Top View) 108 109 73 72 144 1 37 36 N.C. A34 A33 A32 A31 A30 A29 A28 A27 A26 A25 A24 A23 A22 A21 A20 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 N.C. VDD2 VSS2 VDD1 XOUT OSCOUT OSCIN /RESET TEST DLS DS1 DS0 R,/W(/WR) RS,STB E(/RD),SCK SI,SO DB0 DB1 DB2 DB3 DB4 DB5 DB6 DB7 IM MPU /CS R,L1 R,L2 /CL LE SDO SLK TESTOUT VSS1 VSS2 VDD2 N.C. A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 G24 G23 G22 G21 G20 G19 G18 G17 G16 G15 G14 G13 G12 G11 G10 G9 G8 G7 G6 G5 G4 G3 G2 G1 N.C. Remark Use all power supply pins. Leave N.C. pins open. Data Sheet S13231EJ1V0DS00 3 µ PD16314 3. PIN FUNCTIONS 3.1 Power System Pin Symbol 4 Pin Name Pin No. I/O Output Description VDD1 Logic power supply pin 3 Power supply for logic VSS1 Logic ground pin 34 Ground pin for logic VDD2 VFD driving power supply pin 1,36 Power supply for VFD driving circuit VSS2 VFD driving ground pin 2,35 Ground pin for VFD driving Data Sheet S13231EJ1V0DS00 µ PD16314 3.2 Logic system (Microprocessor Interface) Pin Symbol RS,STB Pin Name Register Pin No. I/O Output 13 I select/strobe Description When Parallel data transfer is selected, this pin is Register select. L: Select instruction register(IR). H: Select data register(DR). When serial data transfer mode is selected, this pin is the strobe input. Data can be input when this signal goes L. Command processing is performed at the rising edge of this signal. /CS Chip select 26 I When this pin is L, this device is active. E(/RD), Enable(read)/shift 14 I When M68 parallel data transfer mode is selected (E), this SCK clock pin is enabled. Data is written at the falling edge. When i80 parallel data transfer selected (/RD), this pin is a read-enable pin. When this pin is L, data is output to the data bus. When serial data transfer is selected, this pin is the shift clock input. Data is written at the rising edge. R,/W(/WR) Read/write signal 12 I (write) When M68 parallel data transfer mode is selected (R,/W), this pin is the data transfer select pin. L: Write H: Read When i80 parallel data transfer mode is selected (/WR), this pin is written a write-enable pin. Data is written at rising edge of this signal. When serial data transfer mode is selected this pin is fixed to H or L. SI,SO Serial I/O 15 I/O CMOS- When serial data transfer mode is selected, this pin is used 3-states as an I/O pin. When parallel data transfer mode is selected, this pin is fixed to H or L. DB0 to DB7 DB0 - DB7 Parallel data I/O 16 to 23 I/O CMOS- When parallel data transfer mode is selected, these pins 3-states are used as I/O pins. When 4-bits transfer mode is selected, DB4 to DB7 are used. Data is transferred starting from the most significant bit (MSB) and stored sequentially. /RESET Reset 7 I L: Initializes all the internal registers and commands. Anode and grid outputs are fixed to VSS2. Data Sheet S13231EJ1V0DS00 5 µ PD16314 3.3 Logic System (Other Logic) Pin Symbol OSCIN Pin Name Oscillator pin OSCOUT Pin No. I/O Output Description 6 The resister for determining the oscillation frequency 5 XOUT Oscillator output 4 DS0 Duty selector 11 DS1 is externally attached to this pin. CMOS I Oscillator signal output pin. Sets the duty ratio. The duty ratio is determined by the number of grids. The relationship between the 10 duty ratio and these pins is shown in 4 DUTY RATIO SETTING. IM Interface select I 24 Selects the interface mode: Serial transfer or parallel transfer. L: Selects serial data transfer H: Selects parallel data transfer (In Parallel data transfer mode, the word length differs depending on the instruction.) MPU Interface select I 25 Selects the interface mode: i80-type CPU mode or M68-type CPU mode. L: Selects i80-type CPU mode. H: Selects M68-type CPU mode. DLS Display line select I 9 Selects the number of display lines at power ON reset or reset. L: Selects 1 line (N Note H: Selects 2 lines (N R,L1 Anode output select I 27 = 0) Note = 1) Sets the anode outputs. The Ox pins are set by these pins. R,L2 28 The relationship between Ox and Ax (anode) is shown in 5 ANODE SETTING. TEST Test pin I 8 A pin for testing the IC. L or open: Normal operation mode H: Test mode TESTOUT Test pin O 33 A pin for testing the IC. Leave this pin open. Note N: Display line selection flag for function setting command. 3.4 Logic System (External Extension Driver) Pin Symbol Pin Name Pin No. I/O Output Description SDO Serial data output 31 O CMOS Serial data output for extension grid driver. SLK Serial clock output 32 O CMOS Shift clock pulse for extension grid driver. /CL Clear signal 29 O CMOS Clear signal for extension grid driver. The signal is active low. The grid data stored in the latch of the extension driver is output when this signal is H. If this signal is L, the extension driver outputs L. LE 6 Latch enable 30 O CMOS Latch enable signal for extension grid driver. Data Sheet S13231EJ1V0DS00 µ PD16314 3.5 Output Pins Pin Symbol Pin Name Pin No. I/O Output Description G1 - G24 Grid output Note O CMOS Grid signal output pins. A1 - A80 Anode output Note O CMOS Anode signal output pins. (O1 - O80) Note Refer to 4 DUTY RATIO SETTING. Data Sheet S13231EJ1V0DS00 7 µ PD16314 4. DUTY RATIO SETTING The duty ratio of the µ PD16314 is set by DS0 and DS1 as shown in Table 4− −1 below. Table 4− −1. Duty Ratio Setting DS0 DS1 Duty ratio L L 1/16 (# of grids = 16) L H 1/20 (# of grids = 20) H L 1/24 (# of grids = 24) H H 1/40 (# of grids = 40) Note Note When to set to 1/40 duty mode, the external extension grid driver can be used. 5. ANODE SETTING The anode pins are set by R,L1 and R,L2 as shown in Table 5− −1 below. Table 5− −1. Anode Setting: 2 Line Display (N=1) 8 R,L1 R,L2 Table No. L L Table 5−2 L H Table 5−3 H L Table 5−3 H H Table 5−4 Data Sheet S13231EJ1V0DS00 µ PD16314 Table 5− −2. Anode Pin Layout (When R,L1 = L, R,L2 = L) No. Name No. Name No. Name No. Name 1 VDD2 37 N.C. 73 A35 109 N.C. 2 VSS2 38 A1 74 A36 110 A71 3 VDD1 39 A2 75 A37 111 A72 4 XOUT 40 A3 76 A38 112 A73 5 OSCOUT 41 A4 77 A39 113 A74 6 OSCIN 42 A5 78 A40 114 A75 7 /RESET 43 A6 79 A41 115 A76 8 TEST 44 A7 80 A42 116 A77 9 DLS 45 A8 81 A43 117 A78 10 DS1 46 A9 82 A44 118 A79 11 DS0 47 A10 83 A45 119 A80 12 R,/W(/WR) 48 A11 84 A46 120 G24 13 RS,STB 49 A12 85 A47 121 G23 14 E(/RD),SCK 50 A13 86 A48 122 G22 15 SI,SO 51 A14 87 A49 123 G21 16 DB0 52 A15 88 A50 124 G20 17 DB1 53 A16 89 A51 125 G19 18 DB2 54 A17 90 A52 126 G18 19 DB3 55 A18 91 A53 127 G17 20 DB4 56 A19 92 A54 128 G16 21 DB5 57 A20 93 A55 129 G15 22 DB6 58 A21 94 A56 130 G14 23 DB7 59 A22 95 A57 131 G13 24 IM 60 A23 96 A58 132 G12 25 MPU 61 A24 97 A59 133 G11 26 /CS 62 A25 98 A60 134 G10 27 R,L1 63 A26 99 A61 135 G9 28 R,L2 64 A27 100 A62 136 G8 29 /CL 65 A28 101 A63 137 G7 30 LE 66 A29 102 A64 138 G6 31 SDO 67 A30 103 A65 139 G5 32 SLK 68 A31 104 A66 140 G4 33 TESTOUT 69 A32 105 A67 141 G3 34 VSS1 70 A33 106 A68 142 G2 35 VSS2 71 A34 107 A69 143 G1 36 VDD2 72 N.C. 108 A70 144 N.C. Data Sheet S13231EJ1V0DS00 9 µ PD16314 Table 5− −3. Anode Pin Layout (When R,L1 = L, R,L2 = H) No. 10 Name No. Name No. Name No. Name 1 VDD2 37 N.C. 73 A6 109 N.C. 2 VSS2 38 A40 74 A5 110 A71 3 VDD1 39 A39 75 A4 111 A72 4 XOUT 40 A38 76 A3 112 A73 5 OSCOUT 41 A37 77 A2 113 A74 6 OSCIN 42 A36 78 A1 114 A75 7 /RESET 43 A35 79 A41 115 A76 8 TEST 44 A34 80 A42 116 A77 9 DLS 45 A33 81 A43 117 A78 10 DS1 46 A32 82 A44 118 A79 11 DS0 47 A31 83 A45 119 A80 12 R,/W(/WR) 48 A30 84 A46 120 G24 13 RS,STB 49 A29 85 A47 121 G23 14 E(/RD),SCK 50 A28 86 A48 122 G22 15 SI,SO 51 A27 87 A49 123 G21 16 DB0 52 A26 88 A50 124 G20 17 DB1 53 A25 89 A51 125 G19 18 DB2 54 A24 90 A52 126 G18 19 DB3 55 A23 91 A53 127 G17 20 DB4 56 A22 92 A54 128 G16 21 DB5 57 A21 93 A55 129 G15 22 DB6 58 A20 94 A56 130 G14 23 DB7 59 A19 95 A57 131 G13 24 IM 60 A18 96 A58 132 G12 25 MPU 61 A17 97 A59 133 G11 26 /CS 62 A16 98 A60 134 G10 27 R,L1 63 A15 99 A61 135 G9 28 R,L2 64 A14 100 A62 136 G8 29 /CL 65 A13 101 A63 137 G7 30 LE 66 A12 102 A64 138 G6 31 SDO 67 A11 103 A65 139 G5 32 SLK 68 A10 104 A66 140 G4 33 TESTOUT 69 A9 105 A67 141 G3 34 VSS1 70 A8 106 A68 142 G2 35 VSS2 71 A7 107 A69 143 G1 36 VDD2 72 N.C. 108 A70 144 N.C. Data Sheet S13231EJ1V0DS00 µ PD16314 Table 5− −4. Anode Pin Layout (When R,L1 = H, R,L2 = L) No. Name No. Name No. Name No. Name 1 VDD2 37 N.C. 73 A75 109 N.C. 2 VSS2 38 A41 74 A76 110 A10 3 VDD1 39 A42 75 A77 111 A9 4 XOUT 40 A43 76 A78 112 A8 5 OSCOUT 41 A44 77 A79 113 A7 6 OSCIN 42 A45 78 A80 114 A6 7 /RESET 43 A46 79 A40 115 A5 8 TEST 44 A47 80 A39 116 A4 9 DLS 45 A48 81 A38 117 A3 10 DS1 46 A49 82 A37 118 A2 11 DS0 47 A50 83 A36 119 A1 12 R,/W(/WR) 48 A51 84 A35 120 G24 13 RS,STB 49 A52 85 A34 121 G23 14 E(/RD),SCK 50 A53 86 A33 122 G22 15 SI,SO 51 A54 87 A32 123 G21 16 DB0 52 A55 88 A31 124 G20 17 DB1 53 A56 89 A30 125 G19 18 DB2 54 A57 90 A29 126 G18 19 DB3 55 A58 91 A28 127 G17 20 DB4 56 A59 92 A27 128 G16 21 DB5 57 A60 93 A26 129 G15 22 DB6 58 A61 94 A25 130 G14 23 DB7 59 A62 95 A24 131 G13 24 IM 60 A63 96 A23 132 G12 25 MPU 61 A64 97 A22 133 G11 26 /CS 62 A65 98 A21 134 G10 27 R,L1 63 A66 99 A20 135 G9 28 R,L2 64 A67 100 A19 136 G8 29 /CL 65 A68 101 A18 137 G7 30 LE 66 A69 102 A17 138 G6 31 SDO 67 A70 103 A16 139 G5 32 SLK 68 A71 104 A15 140 G4 33 TESTOUT 69 A72 105 A14 141 G3 34 VSS1 70 A73 106 A13 142 G2 35 VSS2 71 A74 107 A12 143 G1 36 VDD2 72 N.C. 108 A11 144 N.C. Data Sheet S13231EJ1V0DS00 11 µ PD16314 Table 5− −5. Anode Pin Layout (When R,L1 = H, R,L2 = H) No. Name No. Name No. Name No. Name • 1 VDD2 37 N.C. 73 A46 109 N.C. • • 2 VSS2 38 A80 74 A45 110 A10 3 VDD1 39 A79 75 A44 111 A9 • 4 XOUT 40 A78 76 A43 112 A8 • 5 OSCOUT 41 A77 77 A42 113 A7 • 6 OSCIN 42 A76 78 A41 114 A6 7 /RESET 43 A75 79 A40 115 A5 8 TEST 44 A74 80 A39 116 A4 9 DLS 45 A73 81 A38 117 A3 10 DS1 46 A72 82 A37 118 A2 11 DS0 47 A71 83 A36 119 A1 12 R,/W 48 A70 84 A35 120 G24 13 RS,STB 49 A69 85 A34 121 G23 14 E(/RD),SCK 50 A68 86 A33 122 G22 15 SI,SO 51 A67 87 A32 123 G21 16 DB0 52 A66 88 A31 124 G20 17 DB1 53 A65 89 A30 125 G19 18 DB2 54 A64 90 A29 126 G18 19 DB3 55 A63 91 A28 127 G17 20 DB4 56 A62 92 A27 128 G16 21 DB5 57 A61 93 A26 129 G15 22 DB6 58 A60 94 A25 130 G14 23 DB7 59 A59 95 A24 131 G13 24 IM 60 A58 96 A23 132 G12 25 MPU 61 A57 97 A22 133 G11 26 /CS 62 A56 98 A21 134 G10 27 R,L1 63 A55 99 A20 135 G9 28 R,L2 64 A54 100 A19 136 G8 29 /CL 65 A53 101 A18 137 G7 30 LE 66 A52 102 A17 138 G6 31 SDO 67 A51 103 A16 139 G5 32 SLK 68 A50 104 A15 140 G4 33 TESTOUT 69 A49 105 A14 141 G3 34 VSS1 70 A48 106 A13 142 G2 35 VSS2 71 A47 107 A12 143 G1 36 VDD2 72 N.C. 108 A11 144 N.C. 12 Data Sheet S13231EJ1V0DS00 µ PD16314 Table 5− −6. Anode Setting: 1 Line Display (N=0) R,L1 R,L2 Table No. Don’t care L Table 5−7 Don’t care H Table 5−8 Table 5− −7. Anode Pin Layout (When R,L2 = L) No. Name No. Name No. Name No. Name 1 VDD2 37 N.C. 73 A35 109 N.C. 2 VSS2 38 A1 74 A36 110 Unused 3 VDD1 39 A2 75 A37 111 4 XOUT 40 A3 76 A38 112 5 OSCOUT 41 A4 77 A39 113 6 OSCIN 42 A5 78 A40 114 7 /RESET 43 A6 79 Unused 115 8 TEST 44 A7 80 116 9 DLS 45 A8 81 117 10 DS1 46 A9 82 118 11 DS0 47 A10 83 119 12 R,/W 48 A11 84 120 G24 13 RS,STB 49 A12 85 121 G23 14 E(/RD),SCK 50 A13 86 122 G22 15 SI,SO 51 A14 87 123 G21 16 DB0 52 A15 88 124 G20 17 DB1 53 A16 89 125 G19 18 DB2 54 A17 90 126 G18 19 DB3 55 A18 91 127 G17 20 DB4 56 A19 92 128 G16 21 DB5 57 A20 93 129 G15 22 DB6 58 A21 94 130 G14 23 DB7 59 A22 95 131 G13 24 IM 60 A23 96 132 G12 25 MPU 61 A24 97 133 G11 26 /CS 62 A25 98 134 G10 27 R,L1 63 A26 99 135 G9 28 R,L2 64 A27 100 136 G8 29 /CL 65 A28 101 137 G7 30 LE 66 A29 102 138 G6 31 SDO 67 A30 103 139 G5 32 SLK 68 A31 104 140 G4 33 TESTOUT 69 A32 105 141 G3 34 VSS1 70 A33 106 142 G2 35 VSS2 71 A34 107 143 G1 36 VDD2 72 N.C. 108 144 N.C. Data Sheet S13231EJ1V0DS00 13 µ PD16314 Table 5− −8. Anode Pin Layout (When R,L2 = H) No. 14 Name No. Name No. Name No. Name 1 VDD2 37 N.C. 73 A6 109 N.C. 2 VSS2 38 A40 74 A5 110 Unused 3 VDD1 39 A39 75 A4 111 4 XOUT 40 A38 76 A3 112 5 OSCOUT 41 A37 77 A2 113 6 OSCIN 42 A36 78 A1 114 7 /RESET 43 A35 79 Unused 115 8 TEST 44 A34 80 116 9 DLS 45 A33 81 117 10 DS1 46 A32 82 118 11 DS0 47 A31 83 119 12 R,/W 48 A30 84 120 G24 13 RS,STB 49 A29 85 121 G23 14 E(/RD),SCK 50 A28 86 122 G22 15 SI,SO 51 A27 87 123 G21 16 DB0 52 A26 88 124 G20 17 DB1 53 A25 89 125 G19 18 DB2 54 A24 90 126 G18 19 DB3 55 A23 91 127 G17 20 DB4 56 A22 92 128 G16 21 DB5 57 A21 93 129 G15 22 DB6 58 A20 94 130 G14 23 DB7 59 A19 95 131 G13 24 IM 60 A18 96 132 G12 25 MPU 61 A17 97 133 G11 26 /CS 62 A16 98 134 G10 27 R,L1 63 A15 99 135 G9 28 R,L2 64 A14 100 136 G8 29 /CL 65 A13 101 137 G7 30 LE 66 A12 102 138 G6 31 SDO 67 A11 103 139 G5 32 SLK 68 A10 104 140 G4 33 TESTOUT 69 A9 105 141 G3 34 VSS1 70 A8 106 142 G2 35 VSS2 71 A7 107 143 G1 36 VDD2 72 N.C. 108 144 N.C. Data Sheet S13231EJ1V0DS00 µ PD16314 6. VFD DISPLAY The µ PD16314 can display 24 characters x 2 lines, and a VFD can be connected as shown in the figure below. Figure 6− −1. VFD Display A1 A40 µ PD16314 A41 A80 G1 G2 G24 A1 A5 A6 A10 A71 A75 A76 A80 Data Sheet S13231EJ1V0DS00 15 µ PD16314 7. BLOCK FUCTIONS 7.1 CPU Interface The µ PD16314 is provided with a 4-or 8-bit parallel interface and a serial interface. The interface mode is set by the IM pin. IM = “L”: Serial data transfer IM = “H”: Parallel data transfer Table 7− −1. CPU Interface IM /CS RS,STB E(/RD),SCK R,/W(/WR) MPU SI,SO DBn L /CS STB SCK Note Note SI,SO Note H /CS RS E(/RD) R,/W(/WR) MPU Note DBn Note Fix this pin to H or L. 7.2 Registers (IR, DR) The µ PD16314 has two 8-bit registers: an instruction register (IR) and a data register (DR). The IR stores instruction codes, such as display clear and cursor shift, and address information for display data RAM (DDRAM) and character generator RAM (CGRAM). The IR can only be written to from the MPU. The DR temporarily stores the data to be written or read from DDRAM or CGRAM Table 7− −2. Register Selection (IR, DR) Common M68 i80 Function RS R,/W /RD /WR L L H L IR data is written as an internal operation (display clear, etc.) L H L H Data is read to the busy flag (DB7) and address counter (DB6 to DB0) H L H L DR data is written (DR → DDRAM, CGRAM). H H L H DR data is read (DDRAM, CGRAM → DR). 7.3 Busy Flag (Read BF Flag) L is always output for busy flag data (DB 7). 7.4 Address Counter (AC) The address counter(AC) assigns addresses to both DDRAM and CGRAM. When an instruction address is written the IR, the address information is sent from the IR to the AC. Selection of either DDRAM or CGRAM is also determined concurrently by the instruction. After writing to (reading from) DDRAM or CGRAM, the AC is automatically incremented (+1) . The AC contents are output to DB0 to DB6 when RS = L and R,/W = H (Refer to Table 7− −2. Register Selection (IR,DR).). 16 Data Sheet S13231EJ1V0DS00 µ PD16314 7.5 Display Data RAM (DDRAM) Display data RAM (DDRAM) stores display data displayed in 8-bit character codes. Its capacity is 80 x 8 bits, or 80 characters. The area in DDRAM that is not used for display can be used as general data RAM. Refer to 7.5.1 1-line display (N = 0), 7.5.2 2-line display (N = 1) for the relationship between the DDRAM address and the position on the VFD. The DDRAM address (ADD) is set in the address counter (AC) as hexadecimal. Figure 7−1. DDRAM Address High-order bits AC AC6 Low-order bits AC5 AC4 AC3 AC2 Hexadecimal AC1 AC0 Hexadecimal Example : DDRAM address “26” 0 1 0 0 1 2 1 0 6 7.5.1 1-line display (N = 0) Figure 7− −2. 1-Line Display Display position (Digit) 1 2 3 4 5 6 ....... 79 80 DDRAM address 00 01 02 03 04 05 ....... 4E 4F (Hexadecimal) When there are fewer than 80 display characters, the display begins at the head position. For example, if using only one µ PD16314, 24 characters are displayed. When a display shift operation is executed, the DDRAM address shifts. Refer to Figure 7−3. Example of 1-line/24-Character Display. Figure 7− −3. 1-line by 24 Characters Display Example Display position (Digit) 1 2 3 4 5 6 ..... 23 24 DDRAM address 00 01 02 03 04 05 ..... 16 17 Left shift 01 02 03 04 05 06 ..... 17 18 Right shift 4F 00 01 02 03 04 ..... 15 16 (Hexadecimal) Data Sheet S13231EJ1V0DS00 17 µ PD16314 7.5.2 2-line display (N = 1) Figure 7− −4. 2-Line Display Display position (Digit) 1 2 3 4 5 6 ....... 39 40 DDRAM address 00 01 02 03 04 05 ....... 26 27 (Hexadecimal) 40 41 42 43 44 45 ....... 66 67 When the number of display character is less than 40 x 2 lines, the 2 lines are displayed from the head. The first line end address and the second line start address are not consecutive. For example, if using only one µ PD16314, 24 characters x 2 lines are displayed. When a display shift operation is executed, the DDRAM address shifts. Refer to Figure 7−5. Example of 2-Line/24-Character Display. Figure 7− −5. Example of 2-Line/24-Character Display Display position (Digit) 1 2 3 4 5 6 ....... 23 24 DDRAM address 00 01 02 03 04 05 ....... 16 17 (Hexadecimal) 40 41 42 43 44 45 ....... 56 57 01 02 03 04 05 06 ....... 17 18 41 42 43 44 45 46 ....... 57 58 27 00 01 02 03 04 ....... 15 16 67 40 41 42 43 44 ....... 55 56 Left shift Right shift For 40 characters x 2 lines display, the µ PD16314 can be extended using one 16-output grid extension driver. When a display shift operation is executed, the DDRAM address shifts. Refer to Figure 7− −6. Example of 2-Line/40-Character Display. Figure 7− −6. Example of 2-Line/40-Character Display Display position (Digit) 1 2 3 4 23 24 25 39 40 DDRAM address 00 01 02 03 16 17 18 26 27 (Hexadecimal) 40 41 42 43 56 57 58 66 67 01 02 03 04 17 18 19 27 00 41 42 43 44 57 58 59 57 40 27 00 01 02 15 16 17 25 26 67 40 41 42 55 56 57 65 66 Left shift Right shift µ PD16314 display 18 Data Sheet S13231EJ1V0DS00 Extension driver display µ PD16314 7.6 Character Generator ROM (CGROM) CGROM, which is ROM for generating character patterns of 5 x 8 dots from 8-bit character codes, generates 240 types of character patterns. The character codes are shown on the following page. The character codes 00H to 0FH are allocated to the CGRAM. Data Sheet S13231EJ1V0DS00 19 µ PD16314 Figure 7− −7. Character Code Table 1 (ROM code: 001) 0 20 XXXX0000 0 CG RAM (0) XXXX0001 1 CG RAM (1) XXXX0010 2 CG RAM (2) XXXX0011 3 CG RAM (3) XXXX0100 4 CG RAM (4) XXXX0101 5 CG RAM (5) XXXX0110 6 CG RAM (6) XXXX0111 7 CG RAM (7) XXXX1000 8 XXXX1001 9 CG RAM (1) XXXX1010 A CG RAM (2) XXXX1011 B CG RAM (3) XXXX1100 C CG RAM (4) XXXX1101 D CG RAM (5) XXXX1110 E CG RAM (6) XXXX1111 F CG RAM (7) 1 2 3 4 5 6 7 8 CG RAM (0) Data Sheet S13231EJ1V0DS00 9 A B C D E F µ PD16314 Figure 7− −8. Character Code Table 2 (ROM code: 002) 0 XXXX0000 0 CG RAM (0) XXXX0001 1 CG RAM (1) XXXX0010 2 CG RAM (2) XXXX0011 3 CG RAM (3) XXXX0100 4 CG RAM (4) XXXX0101 5 CG RAM (5) XXXX0110 6 CG RAM (6) XXXX0111 7 CG RAM (7) XXXX1000 8 CG RAM (0) XXXX1001 9 CG RAM (1) XXXX1010 A CG RAM (2) XXXX1011 B CG RAM (3) XXXX1100 C CG RAM (4) XXXX1101 D CG RAM (5) XXXX1110 E CG RAM (6) XXXX1111 F CG RAM (7) 1 2 3 4 5 6 7 8 Data Sheet S13231EJ1V0DS00 9 A B C D E F 21 µ PD16314 7.7 Character Generator RAM (CGRAM) With character generator RAM (CGRAM), the user can rewrite character patterns by program. For 5 x 8 dots, 8character patterns can be written. Character codes 00H to 07H and 08H to 0FH have the same CGRAM contents. Refer to Figure 7− −9 for the relationship between the CGRAM address and data and display patterns. Areas that are not used for display can be used as general data RAM. Figure 7− −9. Relationship between the CGRAM Address, Character Code (DDRAM) and 5 x 7 (With Cursor) Dot Character Patterns (CGRAM) Character code (DDRAM data) D7 D6 D5 D4 D3 High-order bits 0 0 0 0 0 0 Remarks 0 0 0 D2 D1 CGRAM address D0 A5 A4 A3 A2 A1 CGRAM data A0 Low-order bits High-order bits Low-order bits 0 0 0 x x x 0 0 1 0 0 1 0 1 1 0 0 1 0 0 1 0 1 1 D7 D6 D5 D4 D3 High-order bits D2 D1 D0 Low-order bits 0 0 0 1 0 0 0 1 0 0 1 1 0 0 0 1 0 1 0 1 1 0 0 1 Character 0 1 1 1 0 1 0 1 pattern (0) 1 0 0 1 0 0 1 1 1 0 1 1 0 0 0 1 1 1 0 1 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 0 0 1 1 0 0 0 0 0 1 0 1 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 1 0 0 0 0 1 0 1 1 0 0 0 0 1 1 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 1 1 0 0 0 1 0 1 0 1 0 0 0 0 Character 0 1 1 1 0 0 0 0 pattern (7) 1 0 0 1 0 0 0 0 1 0 1 1 0 0 0 1 1 1 0 0 1 1 1 0 1 1 1 1 1 1 1 1 x x x x x x x x x Cursor position Character pattern (1) Cursor position Cursor position 1. x: Don’t care. 2.Character code bits 0 to 2 correspond to CGRAM address bits 3 to 5 (3 bits: 8 types). 3.CGRAM address bits 0 to 2 designate the character pattern line position. The 8th line is the cursor position and its display is formed by a logical OR with the cursor specification. If the 8th line data is made 0, the display is determined by the cursor specifiaction. If the 8th line data is 1, the 8th line will light up regardless of the cursor presence. 4.1 for CGRAM data corresponds to display selection and 0 to non selection. 22 Data Sheet S13231EJ1V0DS00 µ PD16314 7.8 Timing Generator The timing generator generates timing signals for the operation of internal circuits such as DDRAM, CGRAM and CGROM. The RAM read timing for display and internal operation timing by MPU access are generated separately to avoid interference. Therefore, when writing data to DDRAM, for example, there will be no undesirable interference, such as flickering, in areas other than the display area. 7.9 VFD Driver Circuit The VFD driver circuit consists of 24 grid signal drivers and 80 anode signal drivers. When the character font and number of digits are selected, the required grid signal drivers automatically output drive waveforms. 7.10 Cursor/Blink Control Circuit The cursor/blink control circuit generates the cursor or character blink. The cursor or blink is valid at the digit located at the display data RAM (DDRAM) address set in the address counter (AC). For example, when the address counter is 08H, the cursor position is displayed at DDRAM address 08H. Figure 7− −10. Cursor/Blink Control AC AC6 AC5 AC4 AC3 AC2 AC1 AC0 0 0 0 1 0 0 0 For 1-line display Display position (Digit) 1 2 3 4 5 6 7 8 9 10 11 12 DDRAM address 00 01 02 03 04 05 06 07 08 09 0A 0B (Hexadecimal) Cursor position For 2-line display Display position (Digit) 1 2 3 4 5 6 7 8 9 10 11 12 DDRAM address 00 01 02 03 04 05 06 07 08 09 0A 0B (Hexadecimal) 40 41 42 43 44 45 46 47 48 49 4A 4B Cursor position Data Sheet S13231EJ1V0DS00 23 µ PD16314 8. INTERFACING WITH CPU (DATA TRANSFER) • 8.1 Parallel Data Transfer M68 (IM = H, MPU = H) This IC can interface (data transfer) with the CPU in 4 or 8 bits (M68 interface: IM = H, MPU = H). However, because the internal registers consist of 8 bits, when transfering data in 4 bits DB4 to DB7 must be used twice. When using 4-bit parallel data transfer, maintain the DB0 to DB3 pins at H or L. The transfer order is the higher 4 bits first (D4 to D7) followed by the lower 4 bits (D0 to D3). Figure 8− −1. Parallel Data Transfer M68 (IM = H, MPU = H) (a) 4-bit data transfer (M68) RS R,/W E DB7 IR7 IR3 IR7 IR3 BF = "0" IR3 D7 D3 DB6 IR6 IR2 IR6 IR2 IR6 IR2 D6 D2 DB5 IR5 IR1 IR5 IR1 IR5 IR1 D5 D1 DB4 IR4 IR0 IR4 IR0 IR4 IR0 D4 D0 Write instruction Write instruction Read instruction (b) 8-bit data transfer (M68) RS R,/W E 24 DB7 IR7 IR7 BF = "0" D7 DB6 IR6 IR6 IR6 D6 DB0 IR0 IR0 IR0 D0 Write instruction Write instruction Read instruction Write data Data Sheet S13231EJ1V0DS00 Write data µ PD16314 8.2 Parallel Data Transfer i80 (IM = H, MPU = L) When IM = H, MPU = L is set, i80 is selected. In the µ PD16314, each time data is sent to and from the CPU, the data is retained the bus holder attached to internal data bus, and is written to the display data RAM by the next data write cycle. When the CPU reads the contents of the display data RAM, the read data is retained in the bus holder for the first data read cycle (dummy), and is read out on the system bus at the next data read cycle. There are certain restrictions in the read sequence of this display data RAM. Be advised that data of the specified address is not generated by the read instruction issued immediately after the address setting. This data is generated when the data is read of the second time. Thus, a dummy read is required following an address setting or write cycle. This relationship is shown in following figure. Figure 8− −2. Parallel Data Transfer i80 (IM = H, MPU = L) Writing MPU /WR Data N N+1 Internal timing N+2 N+3 Latch BUS N holder N+1 N+2 N+3 Write signal Reading MPU /WR /RD Data N N n n+1 Internal timing Address preset Read signal Column Preset N address BUS Increment N+1 N holder Address set #n n Dummy read Data Sheet S13231EJ1V0DS00 N+2 n+1 Data read #n n+2 Data read #n+1 25 µ PD16314 8.3 Serial Data Transfer This IC can interface (data transfer) with the CPU in serial. Data can be written when STB = L. The first byte is the start byte. The IR or the DR is selected by the RS bit(bit 6) and data write or read by R,/W(bit 5 = 0). The next first bytes are instructions on data. When data is read, whether to read the busy flag + address counter (AC6 to AC0) or to read the data written in DDRAM or CGRAM is chosen by the start byte input first. Data is output at the falling edge of the shift clock. Figure 8− −3. Serial Data Transfer Data write STB 1 2 3 4 5 "1" "1" "1" "1" "1" 6 7 8 9 10 11 12 13 14 15 16 RS "0" D7 D6 D5 D4 D3 D2 D1 D0 6 7 8 17 SCK SI R,W Synchronous bits Start byte Instruction/Data Data read STB Wait time : tWAIT 1 µs 1 2 3 4 5 6 "1" "1" "1" "1" "1" R,W 7 8 RS "0" 1 2 3 4 5 9 SCK SI,SO BF "0" IR6 IR5 IR4 IR3 Synchronous bits Start byte 26 Read data Data Sheet S13231EJ1V0DS00 IR2 IR1 IR0 µ PD16314 9. INSTRUCTIONS Instruction Clear display RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 Description 0 0 0 0 0 0 0 0 0 1 Clears the entire display, and sets the DDRAM address to 00H. Cursor home 0 0 0 0 0 0 0 0 1 x Sets the DDRAM address to 00H. Also returns the display being shifted to the original position. DDRAM contents remain unchanged. Entry mode set 0 0 0 0 0 0 0 1 I/D S Sets the cursor direction and specifies display shift. These operations are performed during writing/reading data. Display ON/OFF 0 0 0 0 0 0 1 D C B Turns the entire display ON/OFF(D), the cursor ON/OFF(C), and sets the cursor blink at the character position(B). Cursor or display shift 0 0 0 0 0 1 S/C R/L x x Shifts the display or cursor. Maintains DDRAM contents. Function set 0 0 0 0 1 DL N x BR1 BR0 Sets the data length (parallel data transfer) and number of lines CGRAM address set 0 0 0 1 ACG Set the address of CGRAM. After that, CGRAM data is transferred. DDRAM address set 0 0 1 AD D Set the address of DDRAM. After that, DDRAM data is transferred. Read busy flag & 0 1 BF=’0’ AC address Reads the busy flag (BF) and address counter. BF o always outputs ‘0’. Write data to CGRAM 1 0 Write data 1 1 Read DR data or DDRAM Read data from Writes data to CGRAM or DDRAM. CGRAM or DDRAM Reads data from CGRAM or DDRAM. Data Sheet S13231EJ1V0DS00 27 µ PD16314 Remarks 1. I/D = 1: Increment I/D = 0: Decrement S = 1: Display shift enabled S = 0: Cursor shift enabled S/C = 1: Display shift S/C = 0: Cursor shift R/L = 1: Shift to the right R/L = 0: Shift to the left DL = 1: 8 bits DL = 0: 4 bits N = 0: 1 Line N = 1: 2 Lines BR1,BR0 = 00: 100% 01: 75% 10: 50% 11: 25% 2. X: Don’t care DDRAM: Display Data RAM CGRAM: Character Generator RAM ACG: CGRAM address ADD: DDRAM address AC: Address counter 28 Data Sheet S13231EJ1V0DS00 µ PD16314 10. INSTRUCTION DESCRIPTION 10.1 Clear Display Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 0 0 0 0 1 This instruction: (1) Writes to 20H (Space code) all locations in display data RAM (DDRAM) (2) Sets the address counter (AC) to the DDRAM address 00H. (3) Returns the display Shift to 0. (4) If cursor is displayed, the cursor is moved to the far left edge of the top line (upper line). After reset: DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 0 0 1 RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 0 0 0 0 x 10.2 Cursor Home Code This instruction: (1) Sets the address counter (AC) to the DDRAM address 00H. (2) Returns the display Shift to 0. (3) If cursor is displayed, the cursor is held at the far edge of left the top line (upper line). Data Sheet S13231EJ1V0DS00 29 µ PD16314 10.3 Entry Mode Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 0 0 1 I/D S The I/D determines the way in which the contents of address counter are modified after every access to DDRAM or CGRAM. I/D = 1: Address counter incremented after access to DDRAM or CGRAM. I/D = 0: Address counter decremented after access to DDRAM or CGRAM. The S bit determines a display shift whether or a cursor shift occurs after each write or read to/from DDRAM. S = 1: Display shift enabled. S = 0: Cursor shift enabled. The direction in which the display is shifted is the opposite to that of the cursor. For example, if S = 0 and I/D = 1, cursor would shift one character to the right after a CPU write to DDRAM. However if S = 1 and I/D = 1, the display would shift one character to the left and cursor would maintain its position on the panel. Note that the cursor is shifted in the direction selected by I/D when DDRAM is read, irrespective of the value of S. Similarly reading and writing CGRAM always causes the cursor to shift. Table 10− −1. Cursor Move and Display Shift by Entry Mode Setting I/D S After Writing DDRAM Data After Reading DDRAM Data 0 0 Cursor moves one character to the left. Cursor moves one character to the left. 1 0 Cursor moves one character to the right. Cursor moves one character to the right. 0 1 Display shifts one character to the right without Cursor moves one character to the left. cursor moving. 1 1 Display shifts one character to the left without Cursor moves one character to the right. cursor moving. After reset: 30 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 1 1 0 Data Sheet S13231EJ1V0DS00 µ PD16314 10.4 Display ON/OFF Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 0 1 D C B This instruction controls various features of the display. D = 1: Display on, D = 0: Display off. C = 1: Cursor on, C = 0: Cursor off. B = 1: Blink on, B = 0: Blink off. Blinking is achieved by alternating between a normal and all-on display of a character. The cursor blinks with a frequency of 1 Hz and a duty of 50 %. Blink (1 Hz) Cursor line After reset: DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 1 0 0 0 10.5 Cursor or Display Shift Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 0 1 S/C R/L x x This instruction shifts the display and/or moves the cursor, one character to the left or right, without reading or writing to DDRAM. The S/C bit selects movement of the cursor or movement of both the cursor and display. S/C = 1: Shifts both the cursor and display. S/C = 0: Shifts only the cursor. The R/L bit selects whether to move the display and/or cursor to the left or right. R/L = 1 : Shift one character to the right. R/L = 0 : Shift one character to the left. Table 10− −2. Cursor or Display Shift S/C R/L Cursor 0 0 Moves one character to the left. No shift. 0 1 Moves one character to the right. No shift. 1 0 Moves one character to the left with the display. Shifts one character to the left. 1 1 Moves one character to the right with the display. Shifts one character to the right. Data Sheet S13231EJ1V0DS00 Display 31 µ PD16314 10.6 Function Setting Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 0 1 DL N x BR1 BR0 This instruction sets the data length of the data bus line (when using the parallel interface, IM = H), the number of display lines and the brightness adjustment. This instruction initializes the system, and must be the first instruction executed after power-on. DL = 1: 8-bit CPU interface using DB7 to DB0 DL = 0: 4-bit CPU interface using DB7 to DB4 N = 0: Selects 1-line display (using anode outputs A1 to A40. A41 to A80 are fixed to low .). N = 1: Selects 2-line display (using anode outputs A1 to A80). The BR1, BR0 flags control the brightness of VFD by adjusting the to pulse width of the anode outputs as follows. tDSP ≅ 200 µ s, tBLK ≅ 10 µ s BR1 BR0 Brightness tp 0 0 100 % tDSP x 1.00 0 1 75 % tDSP x 0.75 1 0 50 % tDSP x 0.50 1 1 25 % tDSP x 0.25 T tDSP tp An tBLK tBLK G1 Gn Remark n: Number of grids, T = n x (tDSP + tBLK) After reset: 32 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 1 1 1 0 0 0 Data Sheet S13231EJ1V0DS00 µ PD16314 10.7 CGRAM Address Setting Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 0 1 A A A A A A This instruction: (1) Loads a new 6-bit address into the address counter. (2) Sets the address counter to point to CGRAM. Once the CGRAM data write instruction has been executed, the value of the address counter (AC) will be automatically incremented (+1) or decremented (-1), as determined by the entry mode setting instruction. The CGRAM address is moved from 3FH to 00H (+1, increment setting) or from 00H to 3FH (-1, decrement setting). After reset: Don’t care. 10.8 DDRAM address setting Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 0 1 A A A A A A A This instruction: (1) Loads a new 7-bit address into the address counter. (2) Sets the address counter to point to DDRAM. Once the DDRAM address setting has been executed once, the contents of the address counter (AC) will be automatically incremented (+1) or decremented (-1) after every access of DDRAM, as determined by the entry mode setting instruction. Table 10− −3. Valid DDRAM Address Range Number of Characters Address Range 1st line 40 00H to 27H 2nd line 40 40H to 67H After reset: Don’t care. 10.9 Reading Busy Flag and Address Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 0 1 BF A A A A A A A Note This instruction reads the busy flag (BF) and the value of the address counter in binary “AAAAAAA”. This address counter is used by the CGRAM and DDRAM addresses, and its value is determined by the previous instruction. The address counter contents are same as for the CGRAM address setting and DDRAM address setting instructions. Note The busy flag (BF) always outputs 0. Data Sheet S13231EJ1V0DS00 33 µ PD16314 10.10 Writing Data to CGRAM or DDRAM Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 1 0 D D D D D D D D ←High-order bits Low-order bits→ This instruction writes 8-bit binary data “DDDDDDDD” to CGRAM or DDRAM. Whether to write to CGRAM or DDRAM is determined by the following instruction of CGRAM address setting or DDRAM address setting. After a data write, the value address is automatically incremented or decremented by 1 according to the entry mode set. The entry mode also determines the display shift. 10.11 Reading Data from CGRAM or DDRAM Code RS R,/W DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0 1 1 D D D D D D D D ←High-order bits Low-order bits→ This instruction reads 8-bit binary data “DDDDDDDD” from CGRAM or DDRAM. The previous specification determines whether CGRAM or DDRAM is to be read. Before entering this instruction, either the CGRAM address setting or the DDRAM address setting instruction must be executed. If neither is executed, the first read data is invalid, so when consecutively executing read instructions, the next address data is normally read from the second read. The address setting instructions do not need to be executed just before this read instruction, when the cursor is shifted by the cursor or display shift instruction (only when reading out data from DDRAM). The operation of the cursor shift instruction is the same as the DDRAM address setting instruction. After reading one data, the value of the address is automatically incremented or decremented by 1 according to the entry mode selection. Caution The address counter is automatically incremented or decremented by 1 after the data write instruction to CGRAM or DDRAM is executed. However, even if the contents of the RAM to be data read instruction is executed indicated by the address counter cannot be read. Therefore, to read the data correctly, execute the address setting instruction or the cursor shift instruction (only in the case of DDRAM data read) just before reading, or, read from the second data in the case of executing the consecutive read data instruction. 34 Data Sheet S13231EJ1V0DS00 µ PD16314 10.12 Power On Reset The Internal status of µ PD16314 is initialized as follows after the power supply is turned on. (1) Display clear: DDRAM is filled with 20H (space code). (2) The address counter is set to 00H. The address counter is set to point to DDRAM. (3) Display ON/OFF: D = 0, C = 0, B = 0 (4) Entry mode set: I/D = 1, S = 0 (5) Function set: DL = 1, N = 1 (6) Brightness adjustment: BR0 = BR1 = 0 (7) The CPU interface and duty ratio selection are based on Table 10−4. Table 10− −4. Relationship between Status of µ PD16314 and Pin Selection at Power on Reset Pin Name Function Remark TEST IM DS1 DS0 H x x x Self test mode L or open L x x Serial interface SI,SO, SCK, STB used L or open H x x Parallel interface RS, E, R,/W, DB7 to DB4, or DB7 to DB0 used L or open x L L Duty = 1/16 (16C x 1 or 2L display) The extension driver does not need to be used. L or open x L H Duty = 1/20 (20C x 1 or 2L display) The number of lines is selected L or open x H L Duty = 1/24 (24C x 1 or 2L display) by insutruction. L or open x H H Duty = 1/40 (40C x 1 or 2L display) The extension driver should be used. The number of lines is selected by instruction. Remark X: Don’t care Data Sheet S13231EJ1V0DS00 35 µ PD16314 11. EXAMPLE OF DATA TRANSFER (8-bit Parallel, Data Increment Mode) Figure 11− −1. Initialization and Data Setting Procedure All registers set to initialized value. Power ON Set data length, display line number and display brightness. Function setting CGRAM address setting Data write Write the data to CGRAM. End of data write No Yes DDRAM address setting Write the data to DDRAM. Data write End of Data write No Yes Display ON Display ON/OFF Table 11− −1. Example of Initialization and Data Setting (M68 Series CPU) RS R,/W D7 D6 D5 D4 D3 D2 D1 D0 1 1 x 0 1 Function setting Data length: 8 bits, Display line number: 2 lines VFD brightness: 75% Power ON 0 0 0 0 1 0 0 0 1 0 0 0 0 0 0 CGRAM address set to 00H 1 0 x x x D D D D D x x x D D D D D Write data to CGRAM 64 bytes (8 characters) x x x D D D D D 0 0 1 0 0 0 0 0 0 0 DDRAM address set to 00H 1 0 D D D D D D D D D D D D D D D D Write data to DDRAM 80 bytes (80 characters) D D D D D D D D 0 0 0 0 1 1 0 0 0 36 0 Data Sheet S13231EJ1V0DS00 Display ON, cursor OFF, cursor blink OFF µ PD16314 12. ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings (TA = 25 °C, VSS1 = VSS2 = 0 V) Parameter Symbol Rating Unit −0.5 to +6.0 V Logic power supply voltage VDD1 Logic input voltage VI −0.5 to VDD1 + 0.5 V Logic output voltage VO1 −0.5 to VDD1 + 0.5 V Driver power supply voltage VDD2 −0.5 to +60 V Driver output voltage VO2 −0.5 to VDD2 + 0.5 V IOL2A 10 mA IOH2A −2 mA IOL2G 15 mA IOH2G −20 mA Allowable loss PD 1.2 W Operating ambient temperature TA −40 to +85 °C Storage temperature Tstg −65 to +150 °C Driver output current Anode • • Grid Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. Recommended Operating Range (TA =25 °C, VSS1 = VSS2 = 0 V) Parameter Symbol MIN. TYP. MAX. Unit 5.0 5.5 V Logic power supply voltage VDD1 2.7 Logic system input voltage VIN 0 VDD1 V Driver power supply voltage VDD2 20 50 V IOL2A 5 mA IOH2A −1 mA IOL2G 8 mA IOH2G −15 mA Driver output current Anode • • Grid Remark NEC recommends that power is applied to the chipset in the order given below. VDD1 → Input → VDD2 When turning the power off, the reverse order should be applied. Data Sheet S13231EJ1V0DS00 37 µ PD16314 Electrical Characteristics (Unless otherwise specified, TA = −40 −4 to +85 °C, VDD1 = 5.0 V, VDD2 = 50 V, VSS1 = VSS2 = 0 V) Parameter Symbol Conditions • High-level input voltage 1 VIH1 Logic, except E,SCK, /RESET, R,/W • Low-level input voltage 1 VIL1 Logic, except E,SCK, /RESET, R,/W • High-level input voltage 2 VIH2 E,SCK, /RESET, R,/W • Low-level input voltage 2 VIL2 E,SCK, /RESET, R,/W High-level output voltage (Logic) VOH1 DBn, SI,SO, SDO, SLK, LE, /CL MIN. TYP. MAX. 0.7 VDD1 Unit V 0.3 VDD1 0.8 VDD1 V V 0.2 VDD1 VDD1 − 0.5 V V IO1L = −0.1 mA Low-level output voltage (Logic) VOL1 DBn, SI,SO, SDO, SLK, LE, /CL VSS1 + 0.5 V 500 µA IO1L = 0.1 mA High-level input current IIH TEST, VIN = VDD1 High-level leakage current ILOH Logic, VIN/OUT = VDD1 1.0 µA • • Low-level leakage current ILOL Logic, except DBn, SI, SO −1.0 µA Pull-up MOS current -Ip DBn, SI, SO 30 280 µA • High-level output voltage (Driver) VOH2A1 A1 to A80, IOH2 = −0.5 mA 48 V VOH2A2 A1 to A80, IOH2 = −1 mA 46 V VOH2G G1 to G24, IOH2 = −15 mA 45 V Low-level output voltage (Driver) VOL2 A1 to A80, G1 to G24, IOL2 = 1 mA Current consumption IDD1 IDD2 • • Remark 20 125 5 V Logic (no CPU access) 100 µA Driver 100 µA The TYP. value is a reference value when TA = 25 °C. Switching Characteristics (Unless otherwise specified, TA = −40 to +85 °C, VDD1 = 5.0 V ± 10 %) Parameter Symbol Condition MIN. TYP. MAX. Unit Oscillation frequency fOSC R = 56 kΩ 392 560 728 kHZ • Oscillation frequency fC OSCIN external clock 350 560 750 kHZ • Rise time TTLH1 A1 to A80, CL = 50 pF 2.5 µs TTLH2 G1 to G24, CL = 50 pF 0.25 µs TTHL A1 to A80, G1 to G24, CL = 50 pF 1.0 µs Fall time Remark The TYP. value is a reference value when TA = 25 °C. Switching Timing TTHL TTLH1,2 90% 90% Am, Gn 10% 10% 38 Data Sheet S13231EJ1V0DS00 µ PD16314 Required Conditions for Timing 1 (Unless otherwise specified, TA = −40 −4 to +85 °C) Parallel data transfer (M68 interface): Write (VDD1 = 5.0 V ± 10 %) Parameter Symbol Conditions MIN. TYP. MAX. Unit Enable cycle time tCYCE E↑→E↑ 500 ns Enable “H” pulse width PW EH E 230 ns Enable “L” pulse width PW EL E 230 ns RS, R,/W - E setup time tAS RS, R,/W → E ↑ 20 ns RS, R,/W - E hold time tAH E ↓ → RS, R,/W 10 ns Data setup time tDS DATA → E ↑ 80 ns Data hold time tDH E ↓ → DATA 10 ns Reset pulse width tWRE 500 ns Parallel data transfer (M68 interface): Read (VDD1 = 5.0 V ± 10 %) Parameter Symbol Conditions MIN. TYP. MAX. Unit Enable cycle time tCYCE E↑→E↑ 500 ns Enable “H” pulse width PW EH E 230 ns Enable “L” pulse width PW EL E 230 ns RS, R,/W - E setup time tAS RS, R,/W → E ↑ 20 ns RS, R,/W - E hold time tAH E ↓ → RS, R,/W 10 ns Data delay time tDD E ↑ → DATA Data hold time tDHR E ↓ → DATA Data Sheet S13231EJ1V0DS00 160 5 ns ns 39 µ PD16314 Parallel Interface (M68 input) RS R,/W tAS tAH /CS PWEH PWEL E tDS tDH DB0 Valid Data to DB7 tCYCE Parallel Interface (M68 output) RS R,/W tAS tAH /CS PWEH PWEL E tDD tDHR DB0 Valid Data to DB7 tCYCE Remarks 1. The input signal rise time and fall time (tr, tf) is specified at 15 ns or less. 2. All timing is specified using 20 % and 80 % of VDD1 as the reference. 3. PW EH is specified as the overlap between /CS being L and E. 40 Data Sheet S13231EJ1V0DS00 µ PD16314 Required Conditions for Timing 2 (Unless otherwise specified, TA = −40 −4 to +85 °C) Parallel data transfer (i80 interface): Write (VDD1 = 5.0 V ± 10 %) Parameter • • Symbol Conditions MIN. TYP. MAX. Unit RS hold time tRH8 A0 10 ns RS setup time tRS8 A0 10 ns System cycle time tCYC8 200 ns Control “L” pulse width(WR) tCCLW /WR 30 ns Control “L” pulse width(RD) tCCLR /RD 70 ns Control “H” pulse width(WR) tCCHW /WR 100 ns Control “H” pulse width(RD) tCCHR /RD 100 ns Data setup time tDS8 DB0 to DB7 30 ns Data hold time tDH8 DB0 to DB7 10 ns /RD access time tACC8 DB0 to DB7, CL = 100 pF Output disable time tOH8 DB0 to DB7, CL = 100 pF Reset pulse width tWRE 70 ns 5 ns 500 ns Parallel Interface (i80) RS tf tr t RH8 /CS tRS8 tCYC8 tCCLR, tCCLW /WR, /RD tCCHR, tCCHW tf tDS8 tDH8 DB0 to DB7 (Write) tACC8 tOH8 DB0 to DB7 (Read) Remarks 1. The input signal rise time and fall time (tr, tf) is specified at 15 ns or less. 2. All timing is specified using 20 % and 80 % of VDD1 as the reference. 3. tCCLW and tCCLR are specified as the overlap between /CS being L and /WR and /RD being at the L level. Data Sheet S13231EJ1V0DS00 41 µ PD16314 Required Conditions for Timing 3 (Unless otherwise specified, TA = −40 −4 to +85 °C) Serial data transfer (VDD1 = 5.0 V ± 10 %) Parameter Symbol Conditions MIN. TYP. MAX. Unit Shift clock cycle tCYK SCK 500 ns High-level shift clock pulse width tWHK SCK 200 ns Low-level shift clock pulse width tWLK SCK 200 ns Shift clock hold time tHSTBK STB ↓ → SCK ↓ 100 ns Data setup time tDS DATA → SCK ↑ 100 ns Data hold time tDH SCK ↑ → DATA 100 ns STB hold time tDKSTB SCK ↑ → STB ↑ 500 ns STB pulse width tWSTB 500 ns Wait time tWAIT 8th CLK ↑ → 1st CLK ↓ 1 µs Output data delay time tODD STB ↓ → DATA Output data hold time tODH SCK ↑ → DATA Reset pulse width tWRE 150 5 ns 500 ns Serial Interface (Input) tWSTB STB tHSTBK tCYK tWLK tDKSTB tWHK SCK tDS tDH SI Serial Interface (Output) tWSTB STB tHSTBK tCYK tWLK tDKSTB tWHK SCK tODD tODH SO Remarks 1. The input signal rise time and fall time (tr, tf) is specified at 15 ns or less. 2. All timing is specified using 20 % and 80 % of VDD1 as the reference. 42 Data Sheet S13231EJ1V0DS00 ns µ PD16314 AC Measurement Point VIH Input VIL VOH Output VOL Reset /RESET tWRE Required Conditions for Timing 4 (Unless otherwise specified, TA = −40 −4 to +85 °C) Common timing (M68, i80, serial interface): Power ON reset (VDD1 = 5.0 V ± 10 %) Parameter Symbol Conditions MIN. TYP. MAX. Unit Resetting time tRES VDD 100 µs VDD rising time trDD VDD 1 µs VDD OFF width tOFF VDD 1 ms trDD VDD tRES 4.5 V 0.2 V tOFF Internal reset time Data Sheet S13231EJ1V0DS00 43 µ PD16314 13. PACKAGE DRAWING 144-PIN PLASTIC LQFP (FINE PITCH) (20 20) A B 108 109 73 72 Detail of lead end C D S R Q 144 1 37 36 F G H I M J K P M N NOTE Each lead centerline is located within 0.10 mm (0.004 inch) of its true position (T.P.) at maximum material condition. L ITEM A MILLIMETERS 22.0±0.2 INCHES 0.866±0.008 B 20.0±0.2 0.787 +0.009 –0.008 C 20.0±0.2 0.787 +0.009 –0.008 D 22.0±0.2 0.866±0.008 F 1.25 0.049 G 1.25 0.049 H 0.22 +0.05 –0.04 0.009±0.002 I 0.10 0.004 J 0.5 (T.P.) 0.020 (T.P.) K 1.0±0.2 0.039 +0.009 –0.008 L 0.5±0.2 0.020 +0.008 –0.009 M 0.145 +0.055 –0.045 0.006±0.002 N 0.10 0.004 P 1.4±0.1 0.055±0.004 Q 0.125±0.075 0.005±0.003 R 3 +7 –3 3 +7 –3 S 1.7 MAX. 0.067 MAX. S144GJ-50-8EU-2 44 Data Sheet S13231EJ1V0DS00 µ PD16314 • 14. SOLDERING CONDITIONS Solder the product under the following recommended conditions. For details of the recommended soldering conditions, refer to information Document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and soldering conditions other than those recommended, please contact an NEC salesperson. Surface Mount Type µ PD16314GJ-001-8EU: 144-PIN PLASTIC LQFP (20x20 mm) Soldering Soldering Condition Method Infrared reflow Symbol of Recommended Soldering Condition Package peak temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.), IR35-103-3 Number of times: 3 MAX. <Precaution> Products other than in heat-resistant trays (such as those packaged in a magazine, taping, or non-thermal-resistant tray) cannot be baked in their package. VPS Package peak temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), VP15-103-3 Number of times: 3 MAX. <Precaution> Products other than in heat-resistant trays (such as those packaged in a magazine, taping, or non-thermal-resistant tray) cannot be baked in their package. Wave soldering Solder path temperature: 260 °C MAX., Time: 10 seconds MAX., WS-60-103-1 Number of times:1, Preheating temperature: 120 °C MAX. (Package surface) Partial heating Pin temperature: 300 °C MAX., Time: 3 seconds MAX. (per side of device) − Caution Do not use two or more soldering methods in combination (except the partial heating method). Data Sheet S13231EJ1V0DS00 45 µ PD16314 [MEMO] 46 Data Sheet S13231EJ1V0DS00 µ PD16314 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet S13231EJ1V0DS00 47 µ PD16314 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8