GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten • SMT package with IR emitter (880 nm) and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter und detector can be controlled separately • Suitable for IR reflow soldering Anwendungen Applications • Datenübertragung • Wegfahrsperre • Infrarotschnittstelle • Data transmission • Lock bar • Infrared interface Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 7221 Q62702-P1819 SMT Multi TOPLED® 2001-02-22 1 SFH 7221 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value IRED Einheit Unit Transistor Betriebstemperatur Operating temperature range Top – 40 ... + 100 – 40 ... + 100 °C Lagertemperatur Storage temperature range Tstg – 40 ... + 100 – 40 ... + 100 °C Sperrschichttemperatur Junction temperature Tj + 100 + 100 °C Durchlaßstrom (LED) Forward current (LED) IF 100 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC – 15 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 2500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 – V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE – 35 V Verlustleistung Total power dissipation Ptot 180 165 mW Rth JA 500 450 K/W Rth JS 400 – K/W Wärmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board1) (Padgröße ≥ 16 mm2) mounting on pcb1) (pad size ≥ 16 mm2) Sperrschicht / Lötstelle junction / soldering joint 1) PC-board: G30/FR4 Hinweis / Notes Die angegebenen Grenzdaten gelten für einen Chip. The stated maximum ratings refer to one chip. 2001-02-22 2 SFH 7221 Kennwerte IRED (TA = 25 °C) Characteristics IRED Bezeichnung Parameter Symbol Symbol Wellenlänge der Strahlung Wavelength of radiation IF = 100 mA, tp = 20 ms λpeak Spektrale Bandbreite bei 50% von Imax, IF = 100 mA ∆λ Spectral bandwidth at 50% of Imax, IF = 100 mA Wert Value Einheit Unit 880 nm 80 nm Abstrahlwinkel Viewing angle ϕ ± 60 Grad deg. Aktive Chipfläche Active chip area A 0.16 mm2 Abmessungen der aktiven Chipfläche Dimensions of active chip area L×B L×W 0.4 × 0.4 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90 % and from 90% to 10% IF = 100 mA, RL = 50 Ω t r, t f 0.5 µs Kapazität Capacitance VR = 0 V, f = 1 MHz Co 25 pF VF VF 1.5 (≤ 1.8) 3.0 (≤ 3.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) µA Gesamtstrahlungsfluβ Total radiant flux IF = 100 mA, tp = 20 ms Φe 23 mW Temperaturkoeffizient von Ie bzw. Φe Temperature coefficient of Ie bzw. Φe IF = 100 mA, IF = 100 mA TCI – 0.5 %/K Durchlaβspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs 2001-02-22 3 SFH 7221 Kennwerte IRED (TA = 25 °C) Characteristics IRED (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA TCV –2 mV/K Temperaturkoeffizient von λ Temperature coefficient of λ IF = 100 mA TCλ + 0.25 nm/K Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie >4 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Ie typ. 48 mW/sr IRED Radiation Characteristics Irel = f (ϕ) Phototransistor Directional Characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 2001-02-22 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 4 120˚ SFH 7221 Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 380 … 1150 nm Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area (∅ 240 µm) A 0.045 mm2 Abmessung der Chipfläche Dimensions of chip area L×B 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 … 0.7 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE ≥ 16 µA Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 7 µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 µA, Ee = 0.1 mW/cm2 VCEsat 150 mV 2001-02-22 5 SFH 7221 IRED Forward Current IF = f (VF) TA = 25 °C OHR00881 10 1 ΙF Rel Luminous Intensity IV / IV (10 mA) = f (IF), TA = 25 °C OHR00878 10 2 Ιe Ι e (100mA) A Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 25 °C OHR00886 10 4 mA ΙF D = 0.005 0.01 0.02 0.05 10 1 10 0 10 10 3 0.1 0.2 0 10 -1 0.5 10 -1 10 2 10 DC -2 10 -2 D= 10 -3 10 -3 0 1 2 3 4 5 6 V VF 8 Max. Permissible Forward Current IF = f (T A ) Ι F mA 10 0 10 1 10 2 10 3 mA 10 4 ΙF OHR00877 100 Ι rel 100 % 80 80 R thjA = 450 K/W 60 60 40 40 20 20 0 0 20 2001-02-22 40 60 80 100 ˚C 120 TA tp ΙF T Relative Spectral Emission Irel = f (λ) OHR00883 120 tp T 0 750 800 850 6 900 950 nm 1000 λ 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp SFH 7221 Phototransistor Photocurrent IPCE = f (VCE), Ee = Parameter Rel. Spectral Sensitivity Srel = f (λ) OHF01121 100 OHF01529 10 0 mA Ι PCE S rel % Dark Current ICEO = f (VCE), E = 0 80 60 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 OHF01527 10 1 nA Ι CEO 10 0 10 -1 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 λ Total Power Dissipation Ptot = f (TA) OHF00871 200 10 -2 0 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Capacitance Photocurrent IPCE/IPCE25° = f (TA), CCE = f (VCE), f = 1 MHz, E = 0 VCE = 5 V OHF01528 5.0 mW C CE pF 160 4.0 P tot 5 Ι PCE OHF01524 1.6 Ι PCE 25 1.4 1.2 3.5 120 1.0 3.0 2.5 80 0.8 2.0 0.6 1.5 0.4 40 1.0 0.2 0.5 0 0 20 40 60 Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA 0 10 -2 80 ˚C 100 TA Ι CEO 10 1 V 10 2 V CE OHF00312 10 3 µA Ι PCE 10 2 10 1 10 1 10 0 10 0 2001-02-22 10 0 Photocurrent IPCE = f (Ee), VCE = 5 V 10 2 10 -1 -25 10 -1 0 25 50 75 ˚C 100 TA 10 -1 10 -3 10 -2 m W/cm 2 10 0 Ee 7 0 -25 0 25 50 75 C 100 TA SFH 7221 Maßzeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1.7 (0.067) 2.1 (0.083) C A E 1 0.1 (0.004) typ 4 Package marking 0.5 (0.020) C 3.7 (0.146) 3.3 (0.130) 3 1.1 (0.043) 2 0.9 (0.035) 0.7 (0.028) (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6965 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 8