NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet für Vapor Phase-Löten, IR-Reflow-Löten (JEDEC level 4) und Wellenlöten (JEDEC level 4) • Nur gegurtet lieferbar • Especially suitable for applications from 460 nm to 1080 nm • High linearity • SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4) • Available only on tape and reel Anwendungen Applications • Umgebungslicht-Detektor • Lichtschranken für Gleich- und Wechsel-lichtbetrieb • Industrieelektronik • „Messen/Steuern/Regeln“ • • • • Typ Type Bestellnummer Gehäuse Ordering Code Package SFH 3201 Q62702-P5043 P-DSO-6 SFH 3201-2/3 Q62702-P5209 P-DSO-6 2002-12-06 1 Ambient light detector Photointerrupters Industrial electronics For control and drive circuits SFH 3201 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 20 V Kollektor-Emitterspannung, t < 120 s Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, τ < 10 µs Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 120 mW Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb RthJA 500 K/W 2002-12-06 2 SFH 3201 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 460 … 1080 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.55 mm2 Abmessung der Chipfläche Dimensions of chip area L×B L×W 1×1 mm × mm Halbwinkel Half angle ϕ ± 60 Grad deg. Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 15 pF Dunkelstrom Dark current VCE = 20 V, E = 0 ICEO 3 (≤ 200) nA 2002-12-06 3 SFH 3201 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit -1 -2 -3 IPCE 63 … 125 100 … 200 160 … 320 µA IPCE 1.65 2.6 4.2 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 16 24 34 µs Kollektor-EmitterSättigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) × 0.3, Ee = 0.1 mW/cm2 VCEsat 170 (≤ 250) 170 (≤ 250) 170 (≤ 250) mV Fotostrom, λ = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2002-12-06 0.8 0.6 0.4 0 20 40 60 80 100 4 120 SFH 3201 TA = 25 °C, λ = 950 nm Rel. Spectral Sensitivity, Srel = f (λ) OHF02332 100 Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) OHF00326 10 1 mA Ι pce S rel % 1 2 3 10 0 80 100 70 10 60 OHF00309 140 Ptot mW 120 -1 80 50 60 10 -2 40 30 40 10 -3 20 20 10 0 400 500 600 700 800 900 nm 1100 λ Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 °C Ι PCE OHF01524 1.6 10 -4 -3 10 10 -2 mW/cm 2 Ee Dark Current ICEO = f (VCE), E = 0 OHF02341 10 2 nA 20 40 60 80 C 100 TA OHF02342 10 3 nA Ι CEO 1.4 1.2 0 Dark Current ICEO = f (TA), VCE = 10 V, E = 0 Ι CEO Ι PCE 25 0 10 0 10 1 10 2 10 0 10 1 10 -1 10 0 1.0 0.8 0.6 0.4 0.2 10 -2 0 -25 0 25 50 75 C 100 TA Photocurrent 10 20 30 40 50 V 70 V CE Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz IPCE = f (VCE) Ι pce 0 OHF00327 3.0 mA C CE 1.0 mW/cm 2 2.5 OHF02344 20 pF 15 2.0 1.5 10 0.5 mW/cm 2 1.0 5 0.25 mW/cm 2 0.5 0.1 mW/cm 2 0 0 10 2002-12-06 20 30 40 50 60 V 70 Vce 0 -2 10 10 -1 10 0 5 10 1 V 10 2 VCE 10 -1 0 20 40 60 80 ˚C 100 TA SFH 3201 Maßzeichnung Package Outlines 6.2 (0.244) 6 1 2 3 B 2.1 (0.083) 1.7 (0.067) 3.8 (0.150) 5 4 0.1 M B 0.7 (0.028) 0.4 (0.016) 0.5 (0.020) 0.3 (0.012) Active area 0.55 (0.022) 4.2 (0.165) 2.54 (0.100) spacing 1.27 (0.050) spacing 0.15 (0.006) 0.13 (0.005) A 5.8 (0.228) 3.4 (0.134) 3.0 (0.118) 0...0.1 (0...0.004) 0.2 M A 1 2 3 4 5 6 - - Emitter Collector - - GEOY6982 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-12-06 6 SFH 3201 Löthinweise Soldering Conditions Bauform Type SFH 3201 Drypack Tauch-, Schwalllötung Reflowlötung Level acc. Dip, Wave Soldering Reflow Soldering to IPS-stand. Peak Temp. Max. Time in Peak Temp. Max. Time 020 (solderbath) Peak Zone (package in Peak temp.) Zone 4 260 245 °C 10 s 10 s Kolbenlötung Iron Soldering (Iron temp.) n.a. Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-12-06 7