PEREGRINE PE42556

Product Specification
PE42556 Flip Chip
SPDT UltraCMOS™ RF Switch
9 kHz - 13500 MHz
Product Description
The PE42556 RF Switch is designed for use in Test/ATE,
cellular and other wireless applications. This broadband general
purpose switch maintains excellent RF performance and
linearity from 9kHz through 13500 MHz. The PE42556
integrates on-board CMOS control logic driven by a single-pin,
low voltage CMOS control input. It also has a logic select pin
which enables changing the logic definition of the control pin.
Additional features include a novel user defined logic table,
enabled by the on-board CMOS circuitry. The PE42556 also
exhibits excellent isolation of 26 dB at 13500 MHz, fast settling
time, and is offered in a tiny Flip Chip package.
The PE42556 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance of
GaAs with the economy and integration of conventional CMOS.
Figure 1. Functional Diagram
Features
•
•
•
•
•
•
•
•
•
•
•
HaRP™-Technology-Enhanced
• Eliminates Gate Lag
• No insertion loss or phase drift
• Fast settling time
Next Gen 0.25 µm Process Technology
Single-pin 3.3 V CMOS logic control
High Isolation: 26 [email protected] 13.5 GHz
Low Insertion Loss: 1.7 dB @ 13.5 GHz
P1dB: 33 dBm typical
Return Loss: 13 dB @ 13.5 GHz (typ)
IIP3: +56 dBm typical
Exceptional ESD: 4000 V HBM
Absorptive Switch Design
Flip Chip packaging
Figure 2. Die Photo (Bumps Up)
Flip Chip Packaging
RFC
RF1
ESD
ESD
50Ω
CMOS
Control
Driver
RF2
50Ω
LS CTRL
Document No. 70-0289-05 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 10
PE42556
Product Specification
Table 1. Electrical Specifications: Temp = 25°C, VDD = 3.3V
Parameter
Conditions
Operation Frequency
Min
Typical
9 kHz
Units
13500
MHz
As shown
0.93
1.06
1.23
1.41
2.65
dB
dB
dB
dB
dB
Insertion Loss
9 kHz - 10 MHz
10 - 3000 MHz
3000 - 7500 MHz
7500 - 10000 MHz
10000 - 13500 MHz
Isolation – RF1 to RF2
9 kHz - 10 MHz
10 - 3000 MHz
3000 - 7500 MHz
7500 - 10000 MHz
10000 - 13500 MHz
76.5
43.5
30.0
24.0
15.5
88.5
46.0
31.5
25.5
17.5
dB
dB
dB
dB
dB
Isolation – RFC to RF1
9 kHz - 10 MHz
10 - 3000 MHz
3000 - 7500 MHz
7500 - 10000 MHz
10000 - 13500 MHz
72.5
39.0
31.5
27.0
21.5
84.0
40.5
33.0
30.5
26.5
dB
dB
dB
dB
dB
Isolation – RFC to RF2
9 kHz - 10 MHz
10 - 3000 MHz
3000 - 7500 MHz
7500 - 10000 MHz
10000 - 13500 MHz
75.5
39.5
31.5
27.5
21.0
87.0
41.0
33.0
30.5
26.0
dB
dB
dB
dB
dB
Return Loss
9 kHz - 10 MHz
10 - 3000 MHz
3000 - 7500 MHz
7500 - 10000 MHz
10000 - 13500 MHz
22.5
22.0
17.0
16.0
13.0
dB
dB
dB
dB
dB
Settling Time
50% CTRL to 0.05 dB final value (-40 to +85 °C) Rising Edge
50% CTRL to 0.05 dB final value (-40 to +85 °C) Falling Edge
8.5
9.5
10.0
13.5
µs
µs
Switching Time
50% CTRL to 90% or 10% of final value (-40 to +85 °C)
3.3
4.0
µs
Input 1 dB
Compression 1,2
13500 MHz
33
dBm
Input IP3 1
13500 MHz
56
dBm
Input IP2 1
13500 MHz
107.5
dBm
Note:
0.85
0.92
0.98
1.07
1.74
Max
1. Linearity and power performance are derated at lower frequencies (< 1 MHz)
2. Please refer to Maximum Operating Pin (50Ω) in Table 3
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 10
Document No. 70-0289-05 │ UltraCMOS™ RFIC Solutions
PE42556
Product Specification
Figure 3. Bump Configuration (Bumps Up)
Table 4. Absolute Maximum Ratings
Vss
Symbol
VDD
VI
Flip Chip Packaging
Vdd
CTRL
11
12
1
LS
D-GND
D-GND
10
13
2
GND
DGND
GND
9
14
3
RF1
RF2
8
4
GND
RFC
GND
7
6
5
VCTRL
VLS
TST
TOP
PIN5 (50Ω)
VESD
Bump
No.
Bump
Name
-0.3
-65
-40
Max
4.0
VDD+
0.3
4.0
4.0
150
85
fig. 4,5
30
4000
300
1
VSS
2, 13, 14
D-GND
3, 5, 7, 9
GND
Ground
4
RF2
RF Port 2
6
RFC
RF Common
8
RF1
Negative supply voltage or GND
connection (Note 3)
Digital Ground
V
V
V
°C
°C
dBm
dBm
V
V
Electrostatic Discharge (ESD) Precautions
RF Port 1
LS
Logic Select - Used to determine the
definition for the CTRL pin (see Table 5)
11
VDD
Nominal 3.3 V supply connection
12
CTRL
CMOS logic level
Note: 3. Use VSS (bump 1, VSS = -VDD) to bypass and disable
internal negative voltage generator. Connect VSS (bump 1) to GND
(VSS = 0V) to enable internal negative voltage generator.
Min
When handling this UltraCMOS™ device, observe the
same precautions that you would use with other ESDsensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Table 5. Control Logic Truth Table
Table 3. Operating Ranges
Typ
Max
Units
LS
CTRL
RFC-RF1
RFC-RF2
0
0
1
1
0
1
0
1
off
on
on
off
on
off
off
on
VDD Positive Power Supply
Voltage
3.0
3.3
3.6
V
VDD Negative Power Supply
Voltage
-3.6
-3.3
-3.0
V
Logic Select (LS)
IDD Power Supply Current
(Vss = -3.3V, VDD = 3.0 to
3.6V, -40 to +85 °C)
8.0
12.5
µA
The Logic Select feature is used to determine the
definition for the CTRL pin.
IDD Power Supply Current
(Vss = 0V, VDD = 3.0 to 3.6V,
-40 to +85 °C)
21.5
29.0
µA
Spurious Performance
ISS Negative Power Supply
Current
(Vss = -3.3V, VDD = 3.0 to
3.6V, -40 to +85 °C)
-18.0
-24.0
µA
Control Voltage Low
0.3xVDD
V
PIN RF Power In4 (50Ω):
9 kHz ≤ 1 MHz
1 MHz ≤ 13.5 GHz
fig. 4,5
30
dBm
dBm
Control Voltage High
Units
V
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be restricted to
the limits in the Operating Ranges table. Operation
between operating range maximum and absolute
maximum for extended periods may reduce reliability.
Description
Parameter
Min
-0.3
Note: 5. Please consult Figures 4 and 5 (low-frequency graphs) for
recommended low-frequency operating power level.
6. Human Body Model (HBM, MIL_STD 883 Method 3015.7)
Table 2. Bump Descriptions
10
Parameter/Conditions
Power supply voltage
Voltage on any input except
for CTRL and LS inputs
Voltage on CTRL input
Voltage on LS input
Storage temperature range
Operating temperature range
9 kHz ≤ 1 MHz
1 MHz ≤ 13.5 GHz
ESD voltage (HBM)6
ESD voltage (Machine Model)
V
0.7xVDD
Note: 4. Please consult Figures 4 and 5 (low-frequency graphs) for
recommended low-frequency operating power level.
Document No. 70-0289-05 │ www.psemi.com
The typical spurious performance of the PE42556 is
-116 dBm when VSS=0V (bump 1 = GND). If further
improvement is desired, the internal negative voltage
generator can be disabled by setting VSS = -VDD.
Switching Frequency
The PE42556 has a maximum 25 kHz switching rate
when the internal negative voltage generator is used
(bump1=GND). The rate at which the PE42556 can be
switched is only limited to the switching time (Table 1) if
an external negative supply is provided (bump1=VSS).
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 10
PE42556
Product Specification
Low Frequency Power Handling: ZL = 50Ω
Figure 4 provides guidelines of how to adjust the
Vdd and Input Power to the PE42556 device. The
upper limit curve represents the maximum Input
Power vs Vdd recommended for this part at low
frequencies only. Please consult Table 3 for the
1 MHz ≤ 13.5 GHz range.
Figure 5 shows how the power limit in Figure 4 will
increase with frequency. As the frequency
increases, the contours and Maximum Power
Limit Curve will increase with the increase in
power handling shown on the curve.
Figure 4. Maximum Operating Power Limit
vs. Vdd and Input Power @ 9 KHz
Figure 5. Operating Power Offset vs.
Frequency (Normalized to 9kHz)
Power Handling Scaling with Frequency
Upper Power Limit
30
8
6
25
Operating Power Offset (dB)
Input Power (dBm)
4
2
0
-2
-4
-6
-8
20
15
10
5
-10
-12
0
2.9
3
3.1
3.2
3.3
3.4
3.5
Vdd (V)
3.6
1
10
100
1000
Freq (kHz)
To allow for sustained operation under any load VSWR condition,
max power should be kept 6dB lower than max power in 50 Ohm.
Power Handling Examples
Example 1: Maximum power handling at 100 kHz,
Z=50 ohms, VSWR 1:1, and Vdd=3V
• The power handling offset for 100 kHz from
Fig. 5 is 7 dB
• The max power handling at Vdd = 3 V is 5.5
dB from Fig. 4
• Derate power under mismatch conditions
• Total maximum power handling for this
example is 7 dB + 5.5 dB = 12.5 dBm
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 10
Document No. 70-0289-05 │ UltraCMOS™ RFIC Solutions
PE42556
Product Specification
Figure 6. Evaluation Board Layouts
Evaluation Kit
Peregrine Specification 101/0402
The SPDT switch EK Board was designed to ease
customer evaluation of Peregrine's PE42556 (dual
use with PE42554). The RF Common port is
connected through a 50ohm transmission line via
the top SMA connector, J1. RF1 and RF2 are
connected through 50ohm transmission lines via
SMA connectors J3, and J2, respectively. A
through 50ohm transmission line is available via
SMA connectors J4 and J5. This transmission
line can be used to estimate the loss of the PCB
over the environmental conditions being
evaluated.
The board is constructed of a four metal layers
with a total thickness of 62 mils. The top and
bottom layers are ROGERS RO4003 material with
an 8 mil core and Er=3.55. The middle layers
provide ground for the transmission lines. The RF
transmission lines were designed using a coplanar
waveguide with ground plane model using a trace
width of 15 mils, and trace gaps of 10 mils.
X
Figure 7. Evaluation Board Schematic
Peregrine Specification 102/0478
J9
HEADER, 12 PIN
1
CTL
GND
2
3
LS
GND
4
5
NC
GND
6
7
VDD
GND
8
9
VSS
GND
10
11
GND
GND
12
General Comments
-Transmission lines connected to J1, J2, and J3 should
have exactly the same electrical length.
The path from J2 to J3 including the distance through the part
should have the same length as J4 and J5 and be in parallel to
J4 to J5.
NOTES:
2
J1
6
10
LS
VSS
CTL
VDD
1
12
11
1. USE 101-0402-02 PCB
U1
PE42554
RF1
RFC
RF2
2
J4
1
Document No. 70-0289-05 │ www.psemi.com
J3
1
4
2
2
3
5
7
9
13
14
G0
G1
G2
G4
G5
G6
G7
1
2
8
J2
1
2
J5
1
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 10
PE42556
Product Specification
Performance Plots: Temperature = 25 °C, VDD = 3.3 V unless otherwise indicated
Figure 8. Nominal Insertion Loss: RF1, RF2
Figure 9. Insertion Loss: RFX @ 3.3 V
Figure 10. Insertion Loss: RFX @ 25 °C
Figure 11. Isolation: Active Port to
Isolated Port @ 3.3 V
Figure 12. Isolation: Active Port to
Isolated Port @ 25 °C
Figure 13. Isolation: RFC to
Isolated Port @ 3.3 V
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 6 of 10
Document No. 70-0289-05 │ UltraCMOS™ RFIC Solutions
PE42556
Product Specification
Performance Plots: Temperature = 25 °C, VDD = 3.3 V unless otherwise indicated
Figure 14. Isolation: RFC to
Isolated Port @ 25 °C
Figure 15. Return Loss at active port @ 3.3 V
Figure 16. Return Loss at active port @ 25 °C
Figure 17. IIP3: Third Order Distortion from
IIP3: Third Order Distortion from 9kHz - 14 GHz
9kHz - 14GHz
70
Linearity [dBm]
60
50
40
Nominal Performance
30
20
10
9
10
0.
0E
+9
10
.0
E+
1.
0E
+9
6
10
0.
0E
+6
10
.0
E+
1.
0E
+6
3
10
0.
0E
+3
10
.0
E+
1.
0E
+3
0
Frequency [Hz]
Document No. 70-0289-05 │ www.psemi.com
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 7 of 10
PE42556
Product Specification
Table 6. Mechanical Specifications
Parameter
Typical
Minimum
Die Size, Drawn (x,y)
Maximum
996 x 1896
Die Size, Singulated (x,y)
Wafer Thickness
Units
Test Conditions
µm
As drawn
Including excess sapphire, max. tolerance
= -20/+50 µm
1080 x 1980
1100 x 2000
1150 x 2050
µm
180
200
220
µm
Wafer Size
150
mm
Ball Pitch
400
µm
Ball Height
72.25
85
Ball Diameter
µm
97.75
µm
110
UBM Diameter
85
90
Typical
µm
95
RoHS compliant lead-free solder balls
• Solder ball composition: 95.5%Sn/3.5%Ag/ 1.0%Cu
Table 7. Bump Coordinates
Figure 18. Pad Layout (Bumps Up)
Bump Center (µm)
Bump #
Bump Name
X
Y
Vdd
CTRL
Vss
11
12
1
LS
D-GND
D-GND
10
13
2
GND
DGND
GND
14
3
1
VSS
400
850
2
DGND
400
450
3
GND4
400
50
4
RF2
400
-350
5
GND3
400
-750
9
6
RFC
0
-750
RF1
RF2
7
GND1
-400
-750
8
4
8
RF1
-400
-350
GND
RFC
GND
9
GND2
-400
50
7
6
5
10
LS
-400
450
11
VDD
-400
850
12
CTRL
0
850
13
DGND
0
450
14
DGND
0
50
2000 µm
-20/+50 µm
1100 µm
-20/+50 µm
Singulated Die size: 1.1 X 2.0 mm (400um ball pitch)
All bump locations originate from the die center and refer to the
center of the bump.
Ball pitch is 400 µm.
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 8 of 10
Document No. 70-0289-05 │ UltraCMOS™ RFIC Solutions
PE42556
Product Specification
Figure 19. Tape and Reel Specifications
4.00 ± .05
(.157 ± .002)
1.50 + .10
(.059 + .004)
2.00 ± .05
(.079 ±.002)
4.00 ± .05
(.157 ± .002)
1.75 ± .10
(.069 ± .004)
Bump 1
.229 ± .02
(.009 ± .0008)
LOGO
Pin
#1
3.50 ± .05
(.138 ± .002)
Bo
8.00 +.30 -.10
(.315 +.012 - .004)
2.1± .05
(.083 ± .002)
Ao
AO = 1.2
BO = 2.1
KO = 0.45
1.2 ± .05
(.047 ± .002)
Tape Feed Direction
Bump 1
KO
bump
side
down
.45 ± .05
(.018 ± .002)
Note: Bumped die are oriented active side down
Maximum cavity angle 5o
Device Orientation in Tape
Drawing not drawn to scale, Pocket hole diameter 0.6±0.05mm
Table 8. Ordering Information
Order Code
Package
Specification
Shipping Method
PE42556DI
Die on cut Tape and Reel
81-0012
Loose or cut tape
PE42556DI-Z
Die on full Tape and Reel
81-0012
1,000 Dice / Reel
PE42556DBI
Die in waffle pack
81-0015
204 Dice / Waffle pack
EK42556-01
Evaluation Kit
Document No. 70-0289-05 │ www.psemi.com
1/ box
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 9 of 10
PE42556
Product Specification
Sales Offices
The Americas
Peregrine Semiconductor Corporation
Peregrine Semiconductor, Asia Pacific (APAC)
9380 Carroll Park Drive
San Diego, CA 92121
Tel: 858-731-9400
Fax: 858-731-9499
Shanghai, 200040, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
Europe
Peregrine Semiconductor Europe
Bâtiment Maine
13-15 rue des Quatre Vents
F-92380 Garches, France
Tel: +33-1-4741-9173
Fax : +33-1-4741-9173
High-Reliability and Defense Products
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210
Geumgok-dong, Bundang-gu, Seongnam-si
Gyeonggi-do, 463-943 South Korea
Tel: +82-31-728-3939
Fax: +82-31-728-3940
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6
1-1-1 Uchisaiwai-cho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Americas
San Diego, CA, USA
Phone: 858-731-9475
Fax: 848-731-9499
Europe/Asia-Pacific
Aix-En-Provence Cedex 3, France
Phone: +33-4-4239-3361
Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a CNF
(Customer Notification Form).
©2009-2010 Peregrine Semiconductor Corp. All rights reserved.
Page 10 of 10
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS, HaRP, MultiSwitch and DuNE are trademarks
of Peregrine Semiconductor Corp.
Document No. 70-0289-05 │ UltraCMOS™ RFIC Solutions